Microprocessor Silicon Die Temperature Prediction by Simplified Boundary Conditions

Author(s):  
Koji Nishi ◽  
Tomoyuki Hatakeyama ◽  
Shinji Nakagawa ◽  
Masaru Ishizuka

The thermal network method has a long history with thermal design of electronic equipment. In particular, a one-dimensional thermal network is useful to know the temperature and heat transfer rate along each heat transfer path. It also saves computation time and/or computation resources to obtain target temperature. However, unlike three-dimensional thermal simulation with fine pitch grids and a three-dimensional thermal network with sufficient numbers of nodes, a traditional one-dimensional thermal network cannot predict the temperature of a microprocessor silicon die hot spot with sufficient accuracy in a three-dimensional domain analysis. Therefore, this paper introduces a one-dimensional thermal network with average temperature nodes. Thermal resistance values need to be obtained to calculate target temperature in a thermal network. For this purpose, thermal resistance calculation methodology with simplified boundary conditions, which calculates thermal resistance values from an analytical solution, is also introduced in this paper. The effectiveness of the methodology is explored with a simple model of the microprocessor system. The calculated result by the methodology is compared to a three-dimensional heat conduction simulation result. It is found that the introduced technique matches the three-dimensional heat conduction simulation result well.

Author(s):  
Koji Nishi ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka

This paper introduces and discusses one-dimensional thermal network for microprocessor silicon die temperature prediction both under steady and transient states. Firstly, one-dimensional thermal network with average temperature nodes is constructed with the thermal spreading resistance and the thermal local resistance. Secondly, characteristics of thermal resistances under steady state are discussed. By conducting three-dimensional heat conduction simulation, thermal resistance values are evaluated for the case with different cooling solutions and different heat distributions at silicon die bottom of microprocessor. Thirdly, thermal resistance behavior of introduced thermal network during transient state is explored for further understanding of temperature transition of the microprocessor silicon die. Since the thermal spreading resistance takes relatively large value and changes its value drastically, this paper investigates transient behavior of thermal spreading resistance from TIM (Thermal Interface Material) to heat sink base as an example.


2004 ◽  
Vol 126 (3) ◽  
pp. 374-383 ◽  
Author(s):  
Wen-Hwa Chen ◽  
Hsien-Chie Cheng ◽  
Chih-Han Lin

The study explores the thermal performance of three-dimensional (3-D), vertically stacked multi-chip modules (the so-called MCM-V) in natural convection through finite element (FE) modeling and experimental validation. A modified Infrared (IR) thermography-based thermal characterization (IRTTC) technique that integrates a 3-D heat conduction FE modeling and a two-phased IR thermography measurement process is proposed. In contrast to the conventional IRTTC technique (Chen et al. [1]), the technique can improve the resolution of the captured thermal images so as to attain better characterization of the chip junction temperature. The effectiveness of the proposed modified IRTTC technique is confirmed by means of the thermal test die (TTD) measurement. Furthermore, for facilitating subsequent parametric thermal design, a direct FE approach (DFEA) is also introduced. The DFEA simply incorporates existing empirical models for heat transfer (HT) coefficients to describe the surface heat transfer to the ambient through convection and radiation in the proposed heat conduction FE model. Through the modified IRTTC technique and the TTD measurement, the validity of the proposed FE modeling, including the proposed heat conduction FE model and the applied empirical models for HT coefficients, is verified. With the validated FE modeling, four different chip stacking structures of MCM-V packages, including the thick-die-attach, pyramid, cross and dummy-die types, are investigated. In addition, some essential design factors, affecting the thermal performance of the MCM-V, are also extensively explored through parametric FE study. Eventually, an extensive thermal design guideline is accordingly provided.


2016 ◽  
Vol 138 (4) ◽  
Author(s):  
Sridhar Sadasivam ◽  
Stephen L. Hodson ◽  
Matthew R. Maschmann ◽  
Timothy S. Fisher

A microstructure-sensitive thermomechanical simulation framework is developed to predict the mechanical and heat transfer properties of vertically aligned CNT (VACNT) arrays used as thermal interface materials (TIMs). The model addresses the gap between atomistic thermal transport simulations of individual CNTs (carbon nanotubes) and experimental measurements of thermal resistance of CNT arrays at mesoscopic length scales. Energy minimization is performed using a bead–spring coarse-grain model to obtain the microstructure of the CNT array as a function of the applied load. The microstructures obtained from the coarse-grain simulations are used as inputs to a finite volume solver that solves one-dimensional and three-dimensional Fourier heat conduction in the CNTs and filler matrix, respectively. Predictions from the finite volume solver are fitted to experimental data on the total thermal resistance of CNT arrays to obtain an individual CNT thermal conductivity of 12 W m−1 K−1 and CNT–substrate contact conductance of 7 × 107 W m−2 K−1. The results also indicate that the thermal resistance of the CNT array shows a weak dependence on the CNT–CNT contact resistance. Embedding the CNT array in wax is found to reduce the total thermal resistance of the array by almost 50%, and the pressure dependence of thermal resistance nearly vanishes when a matrix material is introduced. Detailed microstructural information such as the topology of CNT–substrate contacts and the pressure dependence of CNT–opposing substrate contact area are also reported.


2018 ◽  
Vol 21 (8) ◽  
pp. 1286-1297 ◽  
Author(s):  
Antonio Gil ◽  
Andrés Omar Tiseira ◽  
Luis Miguel García-Cuevas ◽  
Tatiana Rodríguez Usaquén ◽  
Guillaume Mijotte

Each of the elements that make up the turbocharger has been gradually improved. In order to ensure that the system does not experience any mechanical failures or loss of efficiency, it is important to study which engine-operating conditions could produce the highest failing rate. Common failing conditions in turbochargers are mostly achieved due to oil contamination and high temperatures in the bearing system. Thermal management becomes increasingly important for the required engine performance. Therefore, it has become necessary to have accurate temperature and heat transfer models. Most thermal design and analysis codes need data for validation; often the data available fall outside the range of conditions the engine experiences in reality leading to the need to interpolate and extrapolate disproportionately. This article presents a fast three-dimensional heat transfer model for computing internal temperatures in the central housing for non-water cooled turbochargers and its direct validation with experimental data at different engine-operating conditions of speed and load. The presented model allows a detailed study of the temperature rise of the central housing, lubrication channels, and maximum level of temperature at different points of the bearing system of an automotive turbocharger. It will let to evaluate thermal damage done to the system itself and influences on the working fluid temperatures, which leads to oil coke formation that can affect the performance of the engine. Thermal heat transfer properties obtained from this model can be used to feed and improve a radial lumped model of heat transfer that predicts only local internal temperatures. Model validation is illustrated, and finally, the main results are discussed.


Author(s):  
Leila Choobineh ◽  
Dereje Agonafer ◽  
Ankur Jain

Heterogeneous integration in microelectronic systems using interposer technology has attracted significant research attention in the past few years. Interposer technology is based on stacking of several heterogeneous chips on a common carrier substrate, also referred to as the interposer. Compared to other technologies such as System-on-Chip (SoC) or System-in-Package (SiP), interposer-based integration offers several technological advantages. However, the thermal management of an interposer-based system is not well understood. The presence of multiple heat sources in various die and the interposer itself needs to be accounted for in any effective thermal model. While a finite-element based simulation may provide a reasonable temperature prediction tool, an analytical solution is highly desirable for understanding the fundamentals of the heat transfer process in interposers. In this paper, we describe our recent work on analytical modeling of heat transfer in interposer-based microelectronic systems. The basic governing energy conservation equations are solved to derive analytical expressions for the temperature distribution in an interposer-based microelectronic system. These solutions are combined with an iterative approach to provide the three-dimensional temperature field in an interposer. Results are in excellent agreement with finite-element solutions. The analytical model is utilized to study the effect of various parameters on the temperature field in an interposer system. Results from this work may be helpful in the thermal design of microelectronic systems containing interposers.


2019 ◽  
Vol 6 (2) ◽  
pp. a1-a7
Author(s):  
N. V. Lishchenko ◽  
V. P. Larshin ◽  
H. Krachunov

A study of a simplified mathematical model for determining the grinding temperature is performed. According to the obtained results, the equations of this model differ slightly from the corresponding more exact solution of the one-dimensional differential equation of heat conduction under the boundary conditions of the second kind. The model under study is represented by a system of two equations that describe the grinding temperature at the heating and cooling stages without the use of forced cooling. The scope of the studied model corresponds to the modern technological operations of grinding on CNC machines for conditions where the numerical value of the Peclet number is more than 4. This, in turn, corresponds to the Jaeger criterion for the so-called fast-moving heat source, for which the operation parameter of the workpiece velocity may be equivalently (in temperature) replaced by the action time of the heat source. This makes it possible to use a simpler solution of the one-dimensional differential equation of heat conduction at the boundary conditions of the second kind (one-dimensional analytical model) instead of a similar solution of the two-dimensional one with a slight deviation of the grinding temperature calculation result. It is established that the proposed simplified mathematical expression for determining the grinding temperature differs from the more accurate one-dimensional analytical solution by no more than 11 % and 15 % at the stages of heating and cooling, respectively. Comparison of the data on the grinding temperature change according to the conventional and developed equations has shown that these equations are close and have two points of coincidence: on the surface and at the depth of approximately threefold decrease in temperature. It is also established that the nature of the ratio between the scales of change of the Peclet number 0.09 and 9 and the grinding temperature depth 1 and 10 is of 100 to 10. Additionally, another unusual mechanism is revealed for both compared equations: a higher temperature at the surface is accompanied by a lower temperature at the depth. Keywords: grinding temperature, heating stage, cooling stage, dimensionless temperature, temperature model.


Author(s):  
Duccio Griffini ◽  
Massimiliano Insinna ◽  
Simone Salvadori ◽  
Francesco Martelli

A high-pressure vane equipped with a realistic film-cooling configuration has been studied. The vane is characterized by the presence of multiple rows of fan-shaped holes along pressure and suction side while the leading edge is protected by a showerhead system of cylindrical holes. Steady three-dimensional Reynolds-Averaged Navier-Stokes (RANS) simulations have been performed. A preliminary grid sensitivity analysis with uniform inlet flow has been used to quantify the effect of spatial discretization. Turbulence model has been assessed in comparison with available experimental data. The effects of the relative alignment between combustion chamber and high-pressure vanes are then investigated considering realistic inflow conditions in terms of hot spot and swirl. The inlet profiles used are derived from the EU-funded project TATEF2. Two different clocking positions are considered: the first one where hot spot and swirl core are aligned with passage and the second one where they are aligned with the leading edge. Comparisons between metal temperature distributions obtained from conjugate heat transfer simulations are performed evidencing the role of swirl in determining both the hot streak trajectory within the passage and the coolant redistribution. The leading edge aligned configuration is resulted to be the most problematic in terms of thermal load, leading to increased average and local vane temperature peaks on both suction side and pressure side with respect to the passage aligned case. A strong sensitivity of both injected coolant mass flow and heat removed by heat sink effect has also been highlighted for the showerhead cooling system.


Author(s):  
Takeharu Misawa ◽  
Hiroyuki Yoshida ◽  
Hidesada Tamai ◽  
Kazuyuki Takase

The three-dimensional two-fluid model analysis code ACE-3D is developed in Japan Atomic Energy Agency for the thermal design procedure on two-phase flow thermal-hydraulics of light water-cooled reactors. In order to perform thermal hydraulic analysis of SCWR, ACE-3D is enhanced to supercritical pressure region. As a result, it is confirmed that transient change in subcritical and supercritical pressure region can be simulated smoothly using ACE-3D, that ACE-3D can predict the results of the past heat transfer experiment in the supercritical pressure condition, and that introduction of thermal conductivity effect of the wall restrains fluctuation of wall.


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