Design of a multiple-electron-beam imaging technique for surface inspection

Abstract The Ion Beam Induced Charge (IBIC) imaging technique is compared with the conventional Electron Beam Induced Current (EBIC) imaging. The IBIC images were found to be strongly dependent on the ion beam energy and ion beam induced degradation. EBIC images are influenced by overlying metal layers while in the case of IBIC, the choice of ion type and energy determine whether the overlying metal layers influence the IBIC image or not. Ion beam induced degradation, an undesirable feature, was found to be improving images in certain cases.

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Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0215 ◽

1997 ◽

Author(s):

J. C. H. Phang ◽

S. Kolachina ◽

D. S. H. Chan

Keyword(s):

Experimental Data ◽

Electron Beam ◽

Integrated Circuits ◽

Failure Analysis ◽

Imaging Technique ◽

Induced Current ◽

Electron Beam Induced Current ◽

Pn Junctions ◽

Single Contact

Abstract Single Contact Electron Beam Induced Current (SCEBIC) microscopy, a new junction imaging technique suitable for visualization of unconnected pn junctions in integrated circuits is presented. By using the substrate contact alone of a die, the SCEBIC approach eliminates the need to connect a junction to the imaging electronics as is done in the conventional Electron Beam Induced Current (EBIC) technique. The principles of SCEBIC are discussed and experimental data which validate the SCEBIC approach for imaging of pn junctions is presented. Examples of SCEBIC images are presented and applications of SCEBIC microscopy in IC failure analysis are discussed.

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Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100065079 ◽

1971 ◽

Vol 29 ◽

pp. 204-205

Author(s):

G. G. Shaw

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Aluminum Alloy ◽

Electron Beam ◽

Pure Aluminum ◽

Ion Milling ◽

Transmission Electron ◽

Fiber Matrix ◽

Ion Erosion ◽

Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100053188 ◽

1982 ◽

Vol 40 ◽

pp. 78-79

Author(s):

Kenneth H. Downing ◽

Robert M. Glaeser

Keyword(s):

Electron Beam ◽

Fatty Acid ◽

Inelastic Scattering ◽

Temperature Dependence ◽

Structural Damage ◽

Direct Result ◽

Second Step ◽

Strong Temperature Dependence ◽

Electron Dose ◽

Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

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The dislocation structure of a 10° [110] tilt boundary in silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074446 ◽

1983 ◽

Vol 41 ◽

pp. 114-115

Author(s):

B. Cunningham ◽

D.G. Ast

Keyword(s):

Dislocation Structure ◽

Tilt Angle ◽

Imaging Technique ◽

Diamond Lattice ◽

Tilt Boundary ◽

Formation Mechanisms ◽

Diffraction Contrast ◽

Lattice Fringe ◽

Tilt Boundaries ◽

Chemically Vapor Deposited

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Domain Formation in Synthetic Quartz

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100064839 ◽

1971 ◽

Vol 29 ◽

pp. 156-157

Author(s):

Joseph J. Comer

Keyword(s):

Electron Beam ◽

Room Temperature ◽

Domain Formation ◽

Synthetic Quartz ◽

Transmission Electron ◽

Black Spots ◽

Diffraction Mode ◽

Domain Boundaries ◽

Kikuchi Lines ◽

Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

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Materials for Electron Beam Information Storage

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100062671 ◽

1969 ◽

Vol 27 ◽

pp. 152-153 ◽

Cited By ~ 1

Author(s):

D. E. Speliotis

Keyword(s):

Magnetic Field ◽

Electron Beam ◽

Recent Literature ◽

Electron Beams ◽

Information Storage ◽

The Subject ◽

The Magnetic Field

The interaction of electron beams with a large variety of materials for information storage has been the subject of numerous proposals and studies in the recent literature. The materials range from photographic to thermoplastic and magnetic, and the interactions with the electron beam for writing and reading the information utilize the energy, or the current, or even the magnetic field associated with the electron beam.

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