The role of surface forces in metal–metal contacts

1985 ◽  
Vol 3 (3) ◽  
pp. 757-761 ◽  
Author(s):  
M. D. Pashley ◽  
J. B. Pethica
Keyword(s):  
Surface Forces ◽  
Metal Contacts ◽  
Metal Metal

Crystal structure and chemistry of natural kutinaite from Černý Důl, Krkonoše, Czech Republic

2015 ◽  
Vol 79 (5) ◽  
pp. 1099-1109 ◽  
Author(s):  
Luca Bindi ◽  
Emil Makovicky
Keyword(s):  
Crystal Structure ◽  
Czech Republic ◽  
Metal Contacts ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray ◽  
Cell Parameters ◽  
Metal Metal ◽  
Crystal Structure And Chemistry

AbstractWe have characterized the crystal structure of natural kutinaite, a rare mineral from the ores of Černý Důl, Czech Republic, by single-crystal X-ray diffraction and chemical analysis. We found that the structure of natural kutinaite is not identical to that of synthetic Cu14Ag6As7, previously reported to be cubic, space group Pm3m. Although topologically similar, the structure of natural kutinaite is indeed tetragonal, space group P4/mmm, with cell parameters: a = 11.789(2), c = 11.766(2) Å, V = 1635.5(4) Å3 and Z = 4. Electron microprobe analyses pointed to the (K,Tl)0.25Cu14Ag6As6.75 stoichiometry (Z = 4), or (K, Tl)Cu56Ag24As27 with Z = 16. The crystal structure of an untwinned crystal has been refined to R1 = 2.61%. It consists of clusters of eight edge-sharing tetrahedra of Cu, which alternate in a 3D chess-board manner with octahedral clusters of six Ag atoms. The latter are surrounded by triangularly coordinated copper in eight faces of a cuboctahedron. The last structure components are large cavities containing partly occupied (K,Tl) sites, coordinated by 18 Ag and As ligands. The structure is full of direct metal-metal contacts although As plays the role of anion, associating especially with copper.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Metal-Metal Cooperative Bond Activation by Heterobimetallic Alkyl, Aryl, and Acetylide PtII/CuI Complexes

2020 ◽  
Author(s):  
Shubham Deolka ◽  
Orestes Rivada Wheelaghan ◽  
Sandra Aristizábal ◽  
Robert Fayzullin ◽  
Shrinwantu Pal ◽  
...  
Keyword(s):  
Alkyl Group ◽  
Bond Activation ◽  
Bond Cleavage ◽  
Terminal Alkyne ◽  
Alkyl Aryl ◽  
Metal Metal ◽  
The Stability ◽  
Selective Formation ◽  
Organoplatinum Compounds

We report selective formation of heterobimetallic PtII/CuI complexes that demonstrate how facile bond activation processes can be achieved by altering reactivity of common organoplatinum compounds through their interaction with another metal center. The interaction of the Cu center with Pt center and with a Pt-bound alkyl group increases the stability of PtMe2 towards undesired rollover cyclometalation. The presence of the CuI center also enables facile transmetalation from electron-deficient tetraarylborate [B(ArF)4]- anion and mild C-H bond cleavage of a terminal alkyne, which was not observed in the absence of an electrophilic Cu center. The DFT study indicates that the role of Cu center acts as a binding site for alkyne substrate, while activating its terminal C-H bond.

Role of a Metal–Metal Bonded Dimer Dication in the One-Electron Oxidation of Rh(η5-C5H5)(CO)(PPh3) and Related Compounds

2012 ◽  
Vol 31 (17) ◽  
pp. 6063-6070 ◽  
Author(s):  
Sabrina Trupia ◽  
Thomas E. Bitterwolf ◽  
William E. Geiger
Keyword(s):  
Metal Metal ◽  
The One ◽  
Related Compounds

Role of metal contacts on the electric and thermoelectric response of hBN/WSe2 based transistors

2021 ◽  
Vol 130 (18) ◽  
pp. 185102
Author(s):  
Salvatore Timpa ◽  
Mehrdad Rahimi ◽  
Jacko Rastikian ◽  
Stéphan Suffit ◽  
François Mallet ◽  
...  
Keyword(s):  
Metal Contacts

The role of metal/metal oxide/organic anode interfaces in efficiency and stability of bulk heterojunction organic photodetectors

2014 ◽  
Vol 117 ◽  
pp. 13-17 ◽  
Author(s):  
A. Soultati ◽  
D.G. Georgiadou ◽  
A. Douvas ◽  
P. Argitis ◽  
D. Alexandropoulos ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Bulk Heterojunction ◽  
Metal Metal ◽  
Organic Photodetectors

Formation of Ag2, Au2 and AgAu particles on MgO(100): DFT study on the role of support-induced charge transfer in metal–metal interactions

2009 ◽  
Vol 255 (16) ◽  
pp. 7380-7384 ◽  
Author(s):  
Silvia A. Fuente ◽  
Patricia G. Belelli ◽  
María M. Branda ◽  
Ricardo M. Ferullo ◽  
Norberto J. Castellani
Keyword(s):  
Charge Transfer ◽  
Dft Study ◽  
Metal Interactions ◽  
Metal Metal ◽  
Induced Charge

scholarly journals Scribing Method for Carbon Perovskite Solar Modules

Energies ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1589 ◽  
Author(s):  
Simone M. P. Meroni ◽  
Katherine E. A. Hooper ◽  
Tom Dunlop ◽  
Jenny A. Baker ◽  
David Worsley ◽  
...  
Keyword(s):  
Screen Printing ◽  
Fill Factor ◽  
Transparent Electrode ◽  
Perovskite Solar Cell ◽  
Metal Contacts ◽  
Good Efficiency ◽  
Long Term Stability ◽  
First Time

The fully printable carbon triple-mesoscopic perovskite solar cell (C-PSC) has already demonstrated good efficiency and long-term stability, opening the possibility of lab-to-fab transition. Modules based on C-PSC architecture have been reported and, at present, are achieved through the accurate registration of each of the patterned layers using screen-printing. Modules based on this approach were reported with geometric fill factor (g-FF) as high as 70%. Another approach to create the interconnects, the so-called scribing method, was reported to achieve more than 90% g-FF for architectures based on evaporated metal contacts, i.e., without a carbon counter electrode. Here, for the first time, we adopt the scribing method to selectively remove materials within a C-PSC. This approach allowed a deep and selective scribe to open an aperture from the transparent electrode through all the layers, including the blocking layer, enabling a direct contact between the electrodes in the interconnects. In this work, a systematic study of the interconnection area between cells is discussed, showing the key role of the FTO/carbon contact. Furthermore, a module on 10 × 10 cm2 substrate with the optimised design showing efficiency over 10% is also demonstrated.

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

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