Variations in the Fe/O value resulting from changes in the ion energy in flows of accelerated solar particles

2016 ◽  
Vol 56 (6) ◽  
pp. 652-660 ◽  
Author(s):  
G. S. Minasyants ◽  
T. M. Minasyants ◽  
V. M. Tomozov
Keyword(s):  
Ion Energy ◽  
Solar Particles

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

A Gas‐Steamed MOF Route to P‐Doped Open Carbon Cages with Enhanced Zn‐Ion Energy Storage Capability and Ultrastability

2021 ◽  
pp. 2101698
Author(s):  
Chun‐Chao Hou ◽  
Yu Wang ◽  
Lianli Zou ◽  
Miao Wang ◽  
Hongwen Liu ◽  
...  
Keyword(s):  
Energy Storage ◽  
Ion Energy

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Floating Gate ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

1998 ◽  
Vol 510 ◽  
Author(s):  
T. Maeda ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias

AbstractThe effects of Inductively Coupled Plasma (ICP) and Electron Cyclotron Resonance (ECR) H2 plasmas on GaAs metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have been measured as a function of ion flux, ion energy and process pressure. The chemical effects of hydrogenation have been compared to direct physical bombardment by Ar plasmas under the same conditions. Si dopant passivation in MESFETs and HEMTs and C base-dopant passivation in HBTs produces much larger changes in sheet resistance, breakdown voltage and device gain or transconductance than Ar ion bombardment and suggests that H2-containing plasma chemistries (CH4/H2 for semiconductor etching, SiH4 for dielectric deposition, CHF3 for dielectric etching) should be avoided, or at least the exposure of the surface minimized. In some cases the device degradation is less for higher source power conditions, due to the suppression of cathode dc self-bias and hence ion energy.

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