X-ray diffraction and X-ray standing-wave study of the lead stearate film structure

Thin films of α-sexithiophene (6T) and C60mixtures deposited on nSiO substrates at 303 and 373 K were investigated in real time andin situduring the film growth using X-ray diffraction. The mixtures are observed to contain the well known 6T low-temperature crystal phase and the β phase, which usually coexist in pure 6T films. The addition of C60modifies the structure to almost purely β-phase-dominated films if the substrate is at 303 K. In contrast, at 373 K the low-temperature crystal phase of 6T dominates the film growth of the mixtures. Post-growth annealing experiments up to 373 K on equimolar mixtures and pure 6T films were also performed and followed in real time with X-ray diffraction. Annealing of pure 6T films results in a strong increase of film ordering, whereas annealing of equimolar 6T:C60mixed films does not induce any significant changes in the film structure. These results lend further support to theories about the important influence of C60on the growth behaviour and structure formation process of 6T in mixtures of the two materials.

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Depth-Resolved Characterization of Perylenediimide Side-Chain Polymer Thin Film Structure Using Grazing-Incidence Wide-Angle X-ray Diffraction with Tender X-rays

Langmuir ◽

10.1021/acs.langmuir.8b01566 ◽

2018 ◽

Vol 34 (29) ◽

pp. 8516-8521 ◽

Cited By ~ 3

Author(s):

Kazutaka Kamitani ◽

Ayumi Hamada ◽

Kazutoshi Yokomachi ◽

Kakeru Ninomiya ◽

Kiyu Uno ◽

...

Keyword(s):

Grazing Incidence ◽

Film Structure ◽

Side Chain ◽

Wide Angle ◽

X Rays ◽

X Ray Diffraction ◽

Polymer Thin Film ◽

Chain Polymer ◽

X Ray

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Multilayer Soap Film Structures*

Advances in X-ray Analysis ◽

10.1154/s0376030800004559 ◽

1966 ◽

Vol 10 ◽

pp. 389-398 ◽

Cited By ~ 1

Author(s):

R. C. Ehlert ◽

R. A. Mattson

Keyword(s):

Soap Film ◽

Film Structure ◽

Diffraction Peak ◽

Double Layers ◽

Multilayer Structures ◽

Good Resolution ◽

Half Maximum ◽

X Ray ◽

First Order ◽

Lead Stearate

AbstractMultilayer soap film structures, particularly the lead stearate variety have been used for several years as a dispersing element in soft X-ray spectrometers. These structures have a high scattering power, and if a high order of diffraction is used for the shorter wavelengths they provide good resolution throughout the 10-80 Å range. Structures having a 2d spacing smaller than that of lead stearate (100 Å) would provide greater dispersion and, hence, resolution in the first order for radiation in the 10-40 Å range. Details concerning the conditions required to build multilayer structures from the soaps of shorter fatty acids such as lead myristate, lead laurate, lead caprate, etc. are given. The various members of the soap film family are compared regarding their diffracting power both as a function of wavelength and the order of diffraction. Information is given regarding the dependence of the diffracting power, the width of the diffraction peak at half maximum and the peak to background ratio as a function of the number of double layers in a structure. The absorption occurring within a lead stearate and a lead laurate structure has been experimentally measured. Observed spectra can, thus, be corrected for the filtration caused by the soap film structure. The soap film family is evaluated as a dispersing element by comparing the various Structures with single crystals such as EDDT and KAP.

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The Effect of H2 Dilution On Thin Film SiN Deposited by Hot Wire Cvd Using SiH4 and NH3 Gas Mixtures

MRS Proceedings ◽

10.1557/proc-664-a7.2 ◽

2001 ◽

Vol 664 ◽

Cited By ~ 1

Author(s):

A. C. Dillon ◽

L. Gedvillas ◽

D. L. Williamson ◽

J. Thiesen ◽

J. D. Perkins ◽

...

Keyword(s):

Thin Film ◽

Gas Phase ◽

Chemical Vapor ◽

Structural Disorder ◽

Gas Mixtures ◽

Film Structure ◽

Hot Wire ◽

X Ray Diffraction ◽

X Ray ◽

N Incorporation

ABSTRACTThe structure of thin film SiN, deposited by the hot wire chemical vapor deposition (HWCVD) technique using SiH4 and NH3 gas mixtures, has been examined as a function of the amount of H2 dilution of the gas mixture. For NH3/SiH4 gas ratios > 0.5/1, all films are a-SiN:H. While H2 dilution does not change the basic film structure, in that the films are amorphous with all dilutions, H2 dilution does increase the efficiency of NH3 dissociation in the gas phase, and causes a further reduction in the already small amount of N-H bonding in a-SiN:H films deposited by HWCVD. For NH3/SiH4 gas ratios typically <0.5/1 and with high H2 dilution, the first deposition of µc-SiN is demonstrated. X-ray diffraction (XRD) measurements demonstrate that the structure of these films consists of silicon crystallites embedded in an a-SiN:H matrix. An upper limit for N incorporation with the preservation of microcrystallinity was found, beyond which the films again became amorphous. The existence of this limit is explained in terms of structural disorder in the a-SiN:H tissue brought about by N incorporation.

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Comparative Studies on Photoelasticity of Elastomers and Plastomers

Rubber Chemistry and Technology ◽

10.5254/1.3546959 ◽

1948 ◽

Vol 21 (4) ◽

pp. 790-798

Author(s):

Wilfried Heller ◽

Hans Oppenheimer

Keyword(s):

Mechanical Properties ◽

Film Structure ◽

Polymer Chains ◽

X Ray Diffraction ◽

Photoelastic Method ◽

Double Refraction ◽

X Ray ◽

Transparent Films ◽

X Ray Scattering

Abstract Transparent films of elastomers and plastomers were found to differ sufficiently in their photoelastic behavior to make stress double refraction a useful criterion of the prospective mechanical properties of a given material. The stress double refraction in such films is mostly an effect of deformation, of orientation, or of both deformation and orientation of polymer chains. In such polymers, however, which crystallize under stress, a large part of the optical effect may be due to oriented crystallization. In addition to its practical value as a testing method for polymers, the photoelastic method offers, therefore, particularly in combination with simultaneous investigations of mechanical properties, the prospect of correlating mechanical properties of a polymer film with its internal structure, and of correlating changes in both qualities on exposure of the film to different degrees of stress. Although results obtained on such films, by means of x-ray diffraction or x-ray scattering and electron-diffraction, are, in general, easier to interpret, the photoelastic method has the considerable advantage of making possible a quantitative follow-up of rapid changes in film structure, e.g., of relaxations.

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Standing-wave effects in grazing-incidence x-ray diffraction from polycrystalline multilayers

Journal of Applied Physics ◽

10.1063/1.2836974 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033504 ◽

Cited By ~ 4

Author(s):

J. Krčmář ◽

V. Holý ◽

L. Horák ◽

T. H. Metzger ◽

J. Sobota

Keyword(s):

Standing Wave ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

Wave Effects

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Enhanced Hardness and Stress-Driven Delamination in Fe/Pt Multilayers

MRS Proceedings ◽

10.1557/proc-382-315 ◽

1995 ◽

Vol 382 ◽

Cited By ~ 7

Author(s):

B.J. Daniels ◽

W.D. Nix ◽

B.M. Clemens

Keyword(s):

Room Temperature ◽

Multilayer Films ◽

Film Structure ◽

Film Stress ◽

X Ray Diffraction ◽

X Ray ◽

Bilayer Period ◽

Sputter Deposited ◽

Epitaxial Multilayers ◽

Qualitative Discussion

ABSTRACTPolycrystalline Fe/Pt multilayers of varying bilayer period, Λ, were sputter deposited onto SiO2 at room temperature. Film structure was characterized by x-ray diffraction, hardness was determined using nanoindentation, and stresses were examined with wafer curvature. The Fe layers were shown to be predominantly {110} oriented while the Pt layers were mostly {111} oriented. The hardnesses of these multilayer films were enhanced over the rule of mixtures value by a factor of almost 3 and exhibited a dependence on Λ which was similar to that previously observed in epitaxial Fe(001)/Pt(001) multilayers. The hardnesses of the polycrystalline multilayers were higher than those of the epitaxial multilayers, presumably due to grain boundary strengthening in these films. Film stress was large (∼1.5 GPa) and compressive, resulting in buckling-driven delamination of the film from the substrate for films with 40≤Λ≤100 Å. Delamination occurred in the “telephone cord” morphology and was observed in real time. A qualitative discussion of our observations of this delamination mechanism is presented.

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Phase Formation in Cu(Sn) Alloy Thin Films

MRS Proceedings ◽

10.1557/proc-427-133 ◽

1996 ◽

Vol 427 ◽

Author(s):

L. A. Clevenger ◽

B. Arcot ◽

W. Ziegler ◽

E. G. Colgan ◽

Q. Z. Hong ◽

...

Keyword(s):

Thin Films ◽

Intermetallic Phase ◽

Electron Beam Evaporation ◽

Film Structure ◽

Film Deposition ◽

Atomic Percent ◽

X Ray Diffraction ◽

X Ray ◽

Cu Films

AbstractThe interdiffusion of Cu and Sn and the formation and dissolution of Cu-Sn precipitate phases have been examined for Cu(Sn) alloy thin films. Cu(Sn) films were deposited by electron beam evaporation in either a Sn/Cu bilayer or Cu/Sn/Cu trilayer film structure, with overall Sn concentrations from 0.1 to 5 atomic percent. Analysis by in situ resistivity, calorimetry, electron diffraction and x-ray diffraction measurements indicates that the bilayer and trilayer films form the intermetallic phase η-Cu6 Sn5 during film deposition. Upon heating, the ε-Cu3Sn phase forms at 170°C, then this phase dissolves into the Cu matrix at approximately 350°C. Finally, ζ- Cu10Sn3 phase forms and precipitates after heating to 500°C and cooling to room temperature. The final resistivity of Cu/Sn/Cu films with more than 2 atomic percent Sn was greater than 3.5 μΩ - cm. However, resistivities from 1.9 to 2.5 μΩ - cm after annealing were obtained with Cu/Sn/Cu films containing less than 2 atomic percent Sn.

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