Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates

2021 ◽  
Author(s):  
L. A. Delimova ◽  
N. V. Zaitseva ◽  
V. V. Ratnikov ◽  
V. S. Yuferev ◽  
D. S. Seregin ◽  
...  
Keyword(s):  
Si Substrates ◽  
Pzt Films

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Microstructural Properties of PZT Thin Films Deposited on LaNiO3-Coated Substrates

2007 ◽  
Vol 555 ◽  
pp. 315-320 ◽  
Author(s):  
Z. Branković ◽  
G. Branković ◽  
K. Vojisavljević ◽  
M. Počuča ◽  
Tatjana Srećković ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Pechini Method ◽  
Slow Heating ◽  
Microstructural Properties ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Treatment Conditions ◽  
Pzt Films ◽  
Size And Morphology

The modified polymeric precursor method (Pechini method) was successfully used for the preparation of epitaxial and polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Films were deposited on LaNiO3 (LNO) – coated silicium (1 0 0) and platinum substrates (Pt (1 1 1)/Ti/SiO2/Si) by spin coating technique. LNO electrodes were also prepared by the Pechini method and treated under different thermal treatment conditions to obtain films with different structural and microstructural properties. Investigation of PZT microstructure was performed as a function of orientation and morphology of the bottom electrode, as well as of thermal treatment conditions. Grain size and morphology were analyzed by AFM, while the quality and orientation of PZT films were determined by GIXRD analysis. It has been found that the proposed thermal treatment on a hot plate, with slow heating rate and long annealing time, can result in the formation of epitaxial PZT films on Si and LNO-coated Si substrates.

Sub-Nanometer-Equivalent PZT Thin Films Fabricated by Low-Temperature MOCVD

1992 ◽  
Vol 284 ◽  
Author(s):  
Hiroshi Miki ◽  
Yuzuru Ohji ◽  
Shinichi Tachi
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrical Measurements ◽  
Reduced Pressure ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric PZT (Pb (Zr,Ti)O3) from 100 nm down to 50 nm thick was deposited on Pt/SiO2/Si substrates using MOCVD (Metal Organic Chemical Vapor Deposition) under reduced pressure at 550°C. Using Pb (DPM)2, Zr (DPM)4, and Ti(i–OC3H7)4 as precursors made it possible to control the composition of CVD films and to produce pure perovskite crystalline structure in the range of thickness less than 100 nm. Electrical measurements of the capacitors revealed that 50-nm PZT films typically had a dielectric constant of 500, resulting in the same capacitance as 0.4-nm SiO2.

Effect of annealing temperature on physical properties of thin epitaxial PZT films on STO/Si substrates

2002 ◽  
Author(s):  
Steven M. Smith ◽  
A. A. Talin ◽  
Steven Voight ◽  
Andy Hooper ◽  
Diana Convey
Keyword(s):  
Physical Properties ◽  
Annealing Temperature ◽  
Si Substrates ◽  
Pzt Films

(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhenshan Zhang ◽  
Jeong Hwan Park ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Metallic Oxide ◽  
Working Pressure ◽  
Si Substrates ◽  
Oxide Electrodes ◽  
Pzt Films ◽  
Deposited Films

AbstractIn this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

Synthesis of the Ferroelectric Solid Solution, Pb(Zr1−xTix)O3 on a Single Substrate Using a Modified Molecular Beam Epitaxy Technique

2007 ◽  
Vol 1034 ◽  
Author(s):  
Piers Anderson ◽  
Samuel Guerin ◽  
Brian E. Hayden ◽  
Mikael A. Khan ◽  
Andrew J. Bell ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
High Throughput ◽  
Molecular Beam ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Pzt Films ◽  
Ferroelectric Hysteresis ◽  
Ferroelectric Oxides

AbstractHigh-throughput synthesis of the ferroelectric solid solution Pb(Zr1−xTix)O3 (PZT) on single Pt/Ti/SiO2/Si substrates was demonstrated using a modified molecular beam epitaxy (MBE) system. The PZT films exhibited a phase transition from rhombohehdral (R) to tetragonal (T) symmetry as a function of Zr:Ti ratio, across the substrate diagonal. This was consistent with the presence of a morphotropic phase boundary (MPB) at a Zr:Ti ratio of 0.64:0.36, different from the value of 0.53:0.47 observed for bulk ceramics. All points on the films exhibited ferroelectric hysteresis loops. The results demonstrate the feasibility of high-throughput MBE for deposition of complex ferroelectric oxides, and pave the way for further materials discovery, in particular Pb-free piezoceramics.

TEM Study for Self-Orientated LaNiO3 Film along [100]

2013 ◽  
Vol 582 ◽  
pp. 185-188
Author(s):  
Naonori Sakamoto ◽  
Kotaro Ozawa ◽  
Kohei Murakoshi ◽  
Tomoya Ohno ◽  
Takanori Kiguchi ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Film Plane ◽  
Lattice Matching ◽  
Si Substrates ◽  
Oxide Electrodes ◽  
Transmission Electron ◽  
Pzt Films ◽  
Perovskite Type ◽  
Type Crystal ◽  
Ferroelectric And Piezoelectric Properties

LaNiO3 (LNO) is known as a candidate for oxide electrodes with perovskite type crystal structure which is suitable for lattice matching with conventional perovskite ferroelectrics, Pb (Zr,Ti)O3 (PZT), BaTiO3 (BTO), etc. We have been investigating thermal expansion effects of the LNO film with PZT/LNO/Si and BTO/LNO/Si structures, where ferroelectric and piezoelectric properties are enhanced by a compressive thermals stress impressed from the LNO layer to the ferrelectric films. The ferroelectric films also shows high [00 orientation owing to [100] orientation of the LNO film. In the present study, further investigation of the LNO films prepared on Si substrates by CSD method is made by transmission electron microscopy (TEM) in order to understand self-orientation along [100] perpendicular to the film plane which effectively leads orientation of PZT films prepared on the LNO film. The results obviously indicates that the 1 layer deposited LNO film has almost no orientation, whereas it shows tendency of orientation of [100] perpendicular to the film plane when the layer number increased.

Growth of highly (100)-oriented Zr-rich PZT films on Pt/Ti/SiO2/Si substrates by a sol-gel process

2001 ◽  
Vol 260 (1) ◽  
pp. 175-181 ◽  
Author(s):  
Xiaorong Fu ◽  
Zhitang Song ◽  
Chenglu Lin ◽  
Helen. L. W. Chan ◽  
Chung-Loong Choy
Keyword(s):  
Sol Gel ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films

Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

2007 ◽  
Vol 1034 ◽  
Author(s):  
Serguei A. Chevtchenko ◽  
Francisco A. Agra ◽  
Jinqiao Xie ◽  
Hadis Morkoç
Keyword(s):  
Comparative Study ◽  
Remanent Polarization ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Sol Gel Films

AbstractWe provide a comparative study of the piezoresponse in thin Pb(ZrxTi1−x)O3 (PZT) films deposited onto GaN/sapphire and Pt/Ti/SiO2/Si substrates using the sol-gel process. The effective piezoelectric coefficient was measured by Piezoresponse Force Microscopy. The resulting effective piezoelectric coefficient obtained for PZT(∼180 nm)/GaN/sapphire structure is 16.7 ± 3.4 pm/V and for PZT(∼180 nm)/Pt/Ti/SiO2/Si structure is 7.8 ± 0.8 pm/V. We also discuss the substrate clamping effect of both structures and explain the relatively stronger piezoresponse of PZT on GaN by different orientation of films formed on the two types of substrates. In this investigation, the PZT thin films crystallized with preferred (100) and (110) orientations on platinum and GaN, respectively. The phase mode of the Piezoresponse Force Microscopy was used to demonstrate remanent polarization in PZT/GaN/sapphire structure.

Effect of Bottom Electrode System on Ferroelectric Properties of Sputter Deposited PZT Capacitors

1998 ◽  
Vol 541 ◽  
Author(s):  
Kwon Hong ◽  
Yong Sik Yu ◽  
Shang Kyoo Lee
Keyword(s):  
Bottom Electrode ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Electrode System ◽  
Fatigue Properties ◽  
Si Substrates ◽  
Pzt Films ◽  
Current Characteristics ◽  
Sputter Deposited ◽  
Electrode Systems

AbstractRF magnetron sputter deposited PZT films were prepared on various bottom electrode systems such as Pt/Ti/SiO2/Si, IrO2/SiO2/Si, Pt/IrO2/SiO2/Si and Ir/IrO2/SiO2/Si substrates using the ceramic PZT target with Pb1.1(Zr0.52Ti0.48)O3 composition. In order to obtain single perovskite phase, PZT films were sputter-deposited at room temperature under Ar only plasma condition followed by high temperature annealing under oxygen ambient. Regardless of the bottom electrode system, reasonable ferroelectric properties such as 2Pp, Vc could be obtained by 650°C post annealing. Their values were over 20μ C/cm2 and below ± 1.OV when drive voltage was ± 3V, respectively. Hybrid electrode system, namely, thick Pt or Ir and thin IrO2 shows good leakage current characteristics, of ∼ 10−8A/cm2. Fatigue properties of PZT capacitor depend on the test condition. However, retention after 3×104sec showed a degradation of 15% when writing voltage was −5V irrespective of bottom electrode system. Imprint characteristics also showed good results within ± 1 as a figure of merit (FOM).

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