Depth profiling of the C/Si interface

1993 ◽  
Vol 71 (11-12) ◽  
pp. 578-581
Author(s):  
D. M. Danailov ◽  
V. Miteva ◽  
U. Littmark
Keyword(s):  
Monte Carlo ◽  
Ion Beam ◽  
Depth Profiling ◽  
Computer Code ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Thin Carbon ◽  
Beam Stability ◽  
Different Temperatures ◽  
Primary Ions

Auger profiles analysis is performed on thin carbon films deposited on silicon substrates (a-C:D/Si) using a 5 keV Xe+-ion beam. Stability of the interface is observed after annealing at different temperatures. The profiling is modeled by means of a Monte-Carlo dynamic computer code. A comparison is made of the mixing of the layers for profiling with different primary ions: the heavy Xe+ and the commonly-used Ar+.

Modification of Carbon Related Films with Energy Beams

2000 ◽  
Vol 647 ◽  
Author(s):  
Hiroshi Naramoto ◽  
Yonghua Xu ◽  
Kazumasa Narumi ◽  
Xiaodong Zhu ◽  
Jiri Vacik ◽  
...  
Keyword(s):  
Laser Energy ◽  
Ion Beam ◽  
Carbon Films ◽  
Fine Tuning ◽  
Nano Particles ◽  
Raman Spectrometry ◽  
Laser Illumination ◽  
Energy Beam ◽  
Thin Carbon ◽  
Annealing Study

AbstractWe report on typical examples of thin carbon films prepared employing energy beam techniques such as ion beam deposition, ion beam assisted deposition and Laser illumination. In an annealing study of ion beam deposited carbon films, small dots with sub-micron size are isolated through the selective oxidation of sp3-bonded amorphous carbon films, and they were confirmed to be diamond nano-particles by micro-Raman spectrometry. C60 deposition assisted with Ne ion beam results in two kinds of films: 1) The quality of C60 films is improved by the assist of 500eV Ne ion bombardment. 2) The increase of Ne ion Energy results in the decomposition of C60 and the films obtained at 700°C contain possible nano-diamond crystallites at the center of the intense beam spot. The Laser illumination decomposes C60 molecules in general, but the fine-tuning of Laser energy density makes it possible to prepare an array of high luminescent spots.

Characterization of thin carbon films formed on the iron surface by magnetron sputtering with ion-beam mixing

2017 ◽  
Vol 59 (3) ◽  
pp. 613-619 ◽  
Author(s):  
T. S. Kartapova ◽  
O. R. Bakieva ◽  
V. L. Vorob’ev ◽  
A. A. Kolotov ◽  
O. M. Nemtsova ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Ion Beam ◽  
Carbon Films ◽  
Iron Surface ◽  
Ion Beam Mixing ◽  
Thin Carbon

scholarly journals Electrochemically Active Thin Carbon Films with Enhanced Adhesion to Silicon Substrates

2016 ◽  
Vol 8 (45) ◽  
pp. 31092-31099 ◽  
Author(s):  
Pengfei Niu ◽  
Laura Asturias-Arribas ◽  
Martí Gich ◽  
César Fernández-Sánchez ◽  
Anna Roig
Keyword(s):  
Carbon Films ◽  
Silicon Substrates ◽  
Thin Carbon ◽  
Electrochemically Active

Characterization of Doped Diamondlike Carbon Films and Multilayers

1993 ◽  
Vol 316 ◽  
Author(s):  
H.C. hofsäss ◽  
J. Biegel ◽  
C. Ronning ◽  
R.G. Downing ◽  
G.P. Lamaze
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Carbon Films ◽  
Localized States ◽  
Neutron Depth Profiling ◽  
Si Substrates ◽  
Current Voltage ◽  
Diamondlike Carbon ◽  
First Results ◽  
Dopant Atoms

ABSTRACTWe have grown doped diamondlike carbon (DLC) thin films on Ni and Si substrates by mass separated low energy ion beam deposition. The current-voltage characteristics of these films and also a P-doped DLC / B-doped DLC diode-like device were measured. Doped DLC films show a higher electrical conductivity, which we interpret by hopping conductivity due to an increased density of localized states rather than a shift of the Fermi level. We also present first results on doping modulated DLC multilayers deposited on Si substrates. The dopant concentration profiles were analyzed by Rutherford Backscattering for63Cu dopant atoms and by neutron depth profiling for a10B doped multilayer.

Hardness depth profiling of ion-implanted polymer thin films

2002 ◽  
Vol 725 ◽  
Author(s):  
Gunnar Suchaneck ◽  
Bodo Wolf ◽  
Margarita Guenther ◽  
Gerald Gerlach
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Substrates ◽  
Depth Sensing ◽  
Elastic Module ◽  
Deposited Energy ◽  
Modified Surface ◽  
Hardness Depth ◽  
Ion Implanted

AbstractHardness measurements in ion implanted polymers are complicated by the fact that the hardness of the material varies as a function of depth within the modified layer. This effect is induced by the distribution of deposited energy, which produces a depth-dependent variation in microstructure. We have used the depth-sensing nano-indentation technique to investigate the mechanical properties of thin films of ion-beam modified aromatic polymers deposited onto silicon substrates. The depth of the ion-modified surface layer was determined using the load variation technique from the hardness and elastic module depth profile and the depth dependence of the power law coefficient of the unloading curve.

Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

1995 ◽  
Vol 396 ◽  
Author(s):  
Imad F. Husein ◽  
Yuanzhong Zhou ◽  
Chung Chan ◽  
Jacob I. Kleiman ◽  
Yu Gudimenko ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Si Substrates ◽  
Thin Carbon ◽  
Nitrogen Ion ◽  
Nitrogen Bonds

AbstractCarbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

Characterization of the Thin Diamond-Like Carbon Films Deposited Using Rf Inductively Coupled Ch4- Plasma Source

1996 ◽  
Vol 446 ◽  
Author(s):  
B. Druz ◽  
V.I. Polyakov ◽  
E. Ostan ◽  
A. Hayes ◽  
A.I. Rukovishnikov ◽  
...  
Keyword(s):  
Cross Sections ◽  
Electrical Breakdown ◽  
Ion Beam ◽  
Plasma Source ◽  
Carbon Films ◽  
Breakdown Field ◽  
Diamond Like Carbon ◽  
Silicon Substrates ◽  
Inductively Coupled ◽  
Photoelectrical Properties

AbstractDiamond-like carbon (DLC) films with 4-400 nm thickness were deposited on silicon substrates using direct ion beam from an RF inductively coupled CH4 - plasma (ICP) source. The dependence of the film electrical and photoelectrical properties on methane flow were examined. Two kinds of trapping centers with different activation energies and capture cross-sections, and very low densities were discovered by the Q-DLTS method. The influence of thermal annealing in air at 100-450°C was investigated. The current leakage and defect concentration were reduced while electrical breakdown field and photoresponse were increased in annealed films. The results obtained have been used for optimization of the technology to prepare thin films with good protective, electrically insulating, and passivating properties.

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