Hardness depth profiling of ion-implanted polymer thin films

2002 ◽  
Vol 725 ◽  
Author(s):  
Gunnar Suchaneck ◽  
Bodo Wolf ◽  
Margarita Guenther ◽  
Gerald Gerlach
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Substrates ◽  
Depth Sensing ◽  
Elastic Module ◽  
Deposited Energy ◽  
Modified Surface ◽  
Hardness Depth ◽  
Ion Implanted

AbstractHardness measurements in ion implanted polymers are complicated by the fact that the hardness of the material varies as a function of depth within the modified layer. This effect is induced by the distribution of deposited energy, which produces a depth-dependent variation in microstructure. We have used the depth-sensing nano-indentation technique to investigate the mechanical properties of thin films of ion-beam modified aromatic polymers deposited onto silicon substrates. The depth of the ion-modified surface layer was determined using the load variation technique from the hardness and elastic module depth profile and the depth dependence of the power law coefficient of the unloading curve.

Analysis of nitride films on silicon substrates by ion beam methods

1995 ◽  
Vol 10 (12) ◽  
pp. 3124-3128 ◽  
Author(s):  
Z.S. Zheng ◽  
J.R. Liu ◽  
X.T. Cui ◽  
W.K. Chu ◽  
S.P. Rangarajan ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Light Element ◽  
Aluminum Foil ◽  
Resonance Scattering ◽  
Particle Beam ◽  
Silicon Substrates ◽  
Resonance Energies ◽  
Contamination Levels ◽  
Foil Substrate

The simultaneous determination of light element contamination levels and accurate nitrogen-to-metal ratios in nitride thin films deposited on silicon substrates is demonstrated by using α-particle beam energies in the range 3–4 MeV. In this energy range, significant light element sensitivity enhancements are observed, while the heavy elements show classical Rutherford behavior. The use of resonance scattering at different resonance energies is shown to be the method of choice for analyzing BN films on silicon. Also, a technique is suggested for analyzing very thin films in which an aluminum foil substrate and buffer layer are used to enhance sensitivities.

Depth profiling of the C/Si interface

1993 ◽  
Vol 71 (11-12) ◽  
pp. 578-581
Author(s):  
D. M. Danailov ◽  
V. Miteva ◽  
U. Littmark
Keyword(s):  
Monte Carlo ◽  
Ion Beam ◽  
Depth Profiling ◽  
Computer Code ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Thin Carbon ◽  
Beam Stability ◽  
Different Temperatures ◽  
Primary Ions

Auger profiles analysis is performed on thin carbon films deposited on silicon substrates (a-C:D/Si) using a 5 keV Xe+-ion beam. Stability of the interface is observed after annealing at different temperatures. The profiling is modeled by means of a Monte-Carlo dynamic computer code. A comparison is made of the mixing of the layers for profiling with different primary ions: the heavy Xe+ and the commonly-used Ar+.

The effect of C60 cluster ion beam bombardment in sputter depth profiling of organic–inorganic hybrid multiple thin films

2008 ◽  
Vol 255 (4) ◽  
pp. 1055-1057 ◽  
Author(s):  
Hyun Kyong Shon ◽  
Tae Geol Lee ◽  
Dahl Hyun Kim ◽  
Hee Jae Kang ◽  
Byoung Hoon Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Depth Profiling ◽  
Inorganic Hybrid ◽  
Cluster Ion

Determination of refractive index and thickness of YbF3 thin films deposited at different bias voltages of APS ion source from spectrophotometric methods

2018 ◽  
Vol 7 (1-2) ◽  
pp. 33-37 ◽  
Author(s):  
Yinhua Zhang ◽  
Shengming Xiong ◽  
Wei Huang ◽  
Kepeng Zhang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Bias Voltage ◽  
Dispersion Model ◽  
Ion Beam ◽  
Plasma Source ◽  
Ion Source ◽  
Monocrystalline Silicon ◽  
Silicon Substrates ◽  
Spectrophotometric Methods

AbstractYtterbium fluoride (YbF3) single thin films were prepared on sapphire and monocrystalline silicon substrates through conventional thermal evaporation and ion beam-assisted deposition (IAD), at bias voltages ranging from 50 to 160 V of the Leybold advanced plasma source (APS). By using the Cauchy dispersion model, the refractive index and thickness of the YbF3thin films were obtained by fitting the 400–2500 nm transmittance of the monolayer YbF3thin films on the sapphire substrate. At the same time, the refractive index and thickness of the YbF3thin films on the monocrystalline silicon substrates were also measured using the VASE ellipsometer at wavelength from 400 to 2200 nm. The results showed that the refractive index deviation of the YbF3thin films between the fitted values by the transmittance spectra and the measured values by the VASE ellipsometer was <0.02 and the relative deviation of the thickness was <1%. Furthermore, the refractive index of the YbF3thin films increased with increasing APS bias voltage. The conventional YbF3thin films and the IAD thin films deposited at low bias voltage revealed a negative inhomogeneity, and a higher bias voltage is beneficial for improving the homogeneity of YbF3thin films.

Electronic transport and microstructure in MoSi2 thin films

1986 ◽  
Vol 1 (3) ◽  
pp. 493-502 ◽  
Author(s):  
T.L. Martin ◽  
J.E. Mahan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Electronic Materials ◽  
Ion Beam ◽  
Molybdenum Disilicide ◽  
Residual Resistivity ◽  
Silicon Substrates ◽  
Tetragonal Crystal ◽  
Average Grain Size ◽  
Polysilicon Layer

Molybdenum disilicide thin films having the tetragonal crystal structure were prepared by furnace reaction of ion-beam-sputtered molybdenum layers with silicon substrates. The room temperature intrinsic resistivity is ∼20 μΩ cm. The Hall effect indicates predominantly hole conduction. Geometrical magnetoresistance measurements provide a carrier mobility estimate of 90 cm2 /V.s at room temperature. The Hall mobility is much less than this; the large difference between the two mobility values suggests multiband conduction. An isotropic, degenerate, twoband model may be fitted to the data with a comparatively low majority carrier concentration (holes) of ∼ 1.5 × 1021 cm−3 Regarding the effects of microstructure on transport, the residual resistivity for films formed on 1-0-0 silicon wafers is much greater than for those formed on an (LPCVD) polysilicon layer: 92 vs 29 μΩ cm, respectively. A correlation with average grain size for the two sample types suggests that grain boundary scattering is the principal cause of the residual resistivity. electronic materials; electrical properties; thin film

Physical Characterization of Thin Films of Lithium Niobate Deposited on Silicon Substrates

1990 ◽  
Vol 200 ◽  
Author(s):  
Robert C. Baumann ◽  
Timothy A. Rost ◽  
Thomas A. Rabson
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Depth Profiling ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Optical ◽  
Auger Electron Spectroscopy Depth ◽  
Deposition Conditions

ABSTRACTThin films (.1-.6 μm) of LiNbO3 have been deposited on silicon substrates by reactive rf sputtering. Under optimized deposition conditions the resulting thin films of LiNbO3 were optically transparent, adhered well to the silicon substrates, and were found to be polycrystalline and uniaxial with the c axis oriented normal to the silicon surface. Optical microscopy and scanning electron microscopy were used to examine film morphology. Both methods indicated that the films were smooth and contained no gross irregularities. The ratio of oxygen to niobium in these films was measured by Rutherford backscattering to be approximately 3 to 1. Auger electron spectroscopy depth profiling revealed that the films had the expected ratio of Li, Nb, and O. This information, together with Bragg x-ray diffraction data, indicates that the thin films deposited on silicon were stoichiometric, crystalline LiNbO3.

Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates

1995 ◽  
Vol 398 ◽  
Author(s):  
Weimin Si ◽  
Michael Dudley ◽  
Pengxing Li ◽  
Renjie Wu
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Ion Beam ◽  
Depth Profiling ◽  
Solid State Reactions ◽  
Reaction Products ◽  
Ion Beam Sputtering ◽  
Thermodynamical Equilibrium ◽  
Beam Sputtering ◽  
Kinetics Of

ABSTRACTThe products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

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