ELECTROMECHANICAL CHARACTERISTICS OF POLYVINYLIDENE FLUORIDE FOR FLEXIBLE ELECTRONICS

2013 ◽  
Vol 37 (3) ◽  
pp. 325-333 ◽  
Author(s):  
Wen-Yang Chang ◽  
Cheng-Hung Hsu
Keyword(s):  
Flexible Electronics ◽  
Polyvinylidene Fluoride ◽  
Input Voltage ◽  
Pvdf Film ◽  
Resistive Load ◽  
X Ray Diffraction ◽  
Leakage Currents ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Stress Cycles

The electromechanical characteristics of PVDF are investigated, including the crystallization, frequency responses, hysteresis, leakage currents, current-voltage characteristics, and fatigue characteristics using X-ray diffraction and an electrometer. Results show that the frequency band of PVDF increases with increasing resistive load and capacitance. The hysteresis area of ΔH slightly increases with increasing input voltage. The magnitude of the current values increases with decreasing delay time at a given drive voltage. PVDF film induced larger degradation when the number of stress cycles was increased to about 105 cumulative cycles.

Leakage and Fatigue Characteristics of Polyvinylidene Fluoride Film

2013 ◽  
Vol 284-287 ◽  
pp. 158-162
Author(s):  
Wen Yang Chang ◽  
Cheng Hung Hsu ◽  
Chih Ping Tsai
Keyword(s):  
Flexible Electronics ◽  
Delay Time ◽  
Polyvinylidene Fluoride ◽  
Input Voltage ◽  
Pvdf Film ◽  
Resistive Load ◽  
X Ray Diffraction ◽  
Leakage Currents ◽  
Pass Filter ◽  
Fatigue Characteristics

The leakage and fatigue characteristics of polyvinylidene fluoride (PVDF) are investigated for flexible electronics. The crystallization, frequency responses, leakage currents, current-voltage characteristics, and fatigue characteristics of PVDF film are measured using X-ray diffraction and an electrometer. Results show that a PVDF model with a resistive load exhibits high-pass filter characteristics. The frequency band of PVDF film increases with increasing resistive load and capacitance. The break frequencies for 100 kΩ, 300 kΩ, 700 kΩ, and 1 MΩ at the break frequency are 611, 207, 88, and 61 Hz, respectively. The hysteresis area of ΔH slightly increases with increasing input voltage. The leakage current of PVDF film is higher for a lower delay time under a given applied electric field. The average leakage currents for delay times of 10 and 1000 ms are 0.565 and 73.8 pA, respectively. The magnitude of the current values increases with decreasing delay time at a given drive voltage. PVDF film induced larger degradation when the number of stress cycles was increased to about 105 cumulative cycles.

Negative Differential Resistance of Graphene Oxide/Sulphur Compound

2021 ◽  
Vol 67 ◽  
pp. 25-31
Author(s):  
Sophia R. Figarova ◽  
Elvin M. Aliyev ◽  
Rashad G. Abaszade ◽  
R.I. Alekberov ◽  
Vagif R. Figarov
Keyword(s):  
Graphene Oxide ◽  
Functional Groups ◽  
Negative Differential Resistance ◽  
Characteristic Curve ◽  
Differential Resistance ◽  
Localized States ◽  
Sulphur Compound ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Current Voltage Characteristics

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.

scholarly journals Effect of fabrication technique on the crystalline phase and electrical properties of PVDF films

2015 ◽  
Vol 33 (1) ◽  
pp. 157-162 ◽  
Author(s):  
P. K. Mahato ◽  
A. Seal ◽  
S. Garain ◽  
S. Sen
Keyword(s):  
Polyvinylidene Fluoride ◽  
Tape Casting ◽  
Dimethyl Formamide ◽  
Pvdf Film ◽  
X Ray Diffraction ◽  
Β Phase ◽  
Cast Films ◽  
Solvent Cast ◽  
Ft Ir ◽  
Ferroelectric Hysteresis

AbstractThe effect of different fabrication techniques on the formation of electroactive β-phase polyvinylidene fluoride (PVDF) has been investigated. Films with varying concentration of PVDF and solvent - dimethyl formamide (DMF) were synthesized by tape casting and solvent casting techniques. The piezoelectric β-phase as well as non polar β-phase were observed for both the tape cast and solvent cast films from X-ray diffraction (XRD) micrographs and Fourier transform infra-red spectroscopy (FT-IR) spectra. A maximum percentage (80 %) of β-phase was obtained from FT-IR analysis for a solvent cast PVDF film. The surface morphology of the PVDF films was analyzed by FESEM imaging. The dielectric properties as a function of temperature and frequency and the ferroelectric hysteresis loop as a function of voltage were measured. An enhancement in the value of the dielectric constant and polarization was obtained in solvent cast films.

LEFT-HANDED MAXWELLIAN BEHAVIOR OF NATURAL MICA

2011 ◽  
Vol 25 (30) ◽  
pp. 2323-2333
Author(s):  
ADITI SARKAR ◽  
ARNAB GANGOPADHYAY ◽  
A. SARKAR
Keyword(s):  
Monochromatic Light ◽  
Polarized Light ◽  
X Ray Diffraction ◽  
Optical Reflectance ◽  
Optical Absorbance ◽  
Left Handed ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Dc Current ◽  
Theoretical Results

In this work, meta-material like behavior of natural Mica are studied. This work makes an attempt to analyze the left-handed Maxwellian (LHM) properties of Mica. The investigations carried out on natural Mica specimen are optical reflectance, optical absorbance and DC current–voltage-characteristics (CVC). Optical reflectance of Mica sheet with plane polarized monochromatic light shows distinct difference with conventional theoretical results. The DC CVC also measured with complete electromagnetic shielding. There exists a clear difference in DC characteristic for presence and absence of stray electromagnetic fields. The X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-VIS) analysis are also carried out for further analysis. The results obtained from the optical reflectance characteristics using polarized light indicate LHM behavior as may be found in a meta-material. Micro-structural and electrical analysis shows that it is a nano-structured layered material.

Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device

2007 ◽  
Vol 997 ◽  
Author(s):  
Manuel Villafuerte ◽  
Silvia P. Heluani ◽  
Gabriel Juárez ◽  
David Comedi ◽  
Gabriel Braunstein ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Electrical Contacts ◽  
X Ray Diffraction ◽  
Semiconductor Interface ◽  
Si Substrates ◽  
Barrier Heights ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Terminal Structure ◽  
Gap States

AbstractN-doped ZnO thin films were deposited by pulsed laser deposition on SiO2/Si substrates. X-ray diffraction analysis revealed that the films had the wurtzite structure, and were highly oriented along the c-axis direction. Au and Al electrical contacts were deposited by sputtering on the top surface of the samples, forming a two-terminal structure in each case. The current-voltage characteristics of the two terminal structure, and the temperature dependence of the resistance switching effect, were studied in the 125-300 K temperature range. The results of these measurements are presented and discussed in terms of the different Schottky barrier heights, as well as in terms of interfacial defect-induced gap states.

Rectifying characteristics and tunable magnetoresistance in heterojunctions of La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3

2017 ◽  
Vol 31 (25) ◽  
pp. 1745022 ◽  
Author(s):  
Yaping Qi ◽  
Xiangbo Liu ◽  
Hao Ni ◽  
Ming Zheng ◽  
Liping Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Transition ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

La[Formula: see text]Hf[Formula: see text]MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La[Formula: see text]Hf[Formula: see text]MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current–voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.

The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 885-888 ◽  
Author(s):  
Shin Harada ◽  
Yasuo Namikawa
Keyword(s):  
Basal Plane ◽  
Great Influence ◽  
Reverse Current ◽  
Isosceles Triangle ◽  
Etch Pits ◽  
Leakage Currents ◽  
Planar Fault ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Koh Etching

The area where 4H-SiC SBDs showed high reverse currents was extracted. After KOH etching, the in-grown SF on the basal plane, composed of a straight etch line with a pair of tilted oval pits and additional etch pits forming an isosceles triangle, was observed on some devices. All of the devices containing this SF structure showed large reverse leakage currents in spite of the good forward I-V characteristics. We speculate that this in-grown SF includes another planar fault on the {1-100} plane besides the basal plane which has a great influence on reverse currents of SBDs.

Para-sexiphenyl-CdSe Nanocrystals Hybrid Light Emitting Diodes with Optimized Layer Thickness and Interfaces

2009 ◽  
Vol 1154 ◽  
Author(s):  
Clemens Simbrunner ◽  
Gerardo Hernandez-Sosa ◽  
Eugen Baumgartner ◽  
Günter Hesser ◽  
Jürgen Roither ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spectral Response ◽  
Cdse Nanocrystals ◽  
Device Performance ◽  
Leakage Currents ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
High Color Purity ◽  
Narrow Emission

AbstractCdSe/ZnS nanocrystals are embedded in para-sexiphenyl (p-6P) based hybrid light emitting diode devices providing red, green and blue (RGB) emission compatible to the HDTV color triangle. By structural and optical investigations the device parameters are optimized. The device performance is analyzed in respect to electrical and spectral response resulting in current-voltage characteristics with small leakage currents and low onset voltages. Furthermore the devices provide high color purity and stability which is demonstrated by their narrow emission line widths. All these results underline the ability of the presented device configuration to act as a future candidate for display applications.

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