Compact Model for Current Collapse in GaN-HEMT Power Switches

2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640001 ◽  
Author(s):  
Mirwazul Islam ◽  
Grigory Simin
Keyword(s):  
Applied Voltage ◽  
Time Dependent ◽  
Compact Model ◽  
Drain Voltage ◽  
Gan Hemt ◽  
Current Collapse ◽  
Current Voltage ◽  
Power Switches ◽  
Current Voltage Characteristics ◽  
Voltage Swing

We present a simple yet accurate model describing current-voltage characteristics of GaN-HEMT power switches in presence of carrier trapping often referred to as current collapse. The model accounts for time-dependent changes in the source-gate and gate-drain resistances after application of high drain voltage. The model also has a regime describing ‘fast’ current voltage characteristics when the applied voltage swing occurs within a period of time much shorter than the characteristic trapping – detrapping times. The model is written in Verilog-A and can be implemented in SPICE-type circuit simulators.

scholarly journals Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 98
Author(s):  
Eugeny Ryndin ◽  
Natalia Andreeva ◽  
Victor Luchinin
Keyword(s):  
Metal Oxide ◽  
Equation System ◽  
Software Implementation ◽  
Compact Model ◽  
Metal Oxide Films ◽  
Bipolar Switching ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Good Agreement

The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

scholarly journals CURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS

2020 ◽  
Vol 259 (4) ◽  
pp. 12-18
Author(s):  
I. M. Abolduev ◽  
N. V. Alkeev ◽  
V. S. Belyaev ◽  
E. V. Kaevitser ◽  
I. D. Kashlakov
Keyword(s):  
Initial Data ◽  
Technological Process ◽  
Semiconductor Device ◽  
Thermal Characteristics ◽  
Gan Hemt ◽  
Current Collapse ◽  
Operation Modes ◽  
Current Voltage ◽  
And Behavior ◽  
Insight Into

The article discusses the issues of design and methodology related to the current-voltage (I-V) characteristics of a GaN HEMT. Reliable I-V characteristics show the operability of a semiconductor device, provide initial data for functional application of the device, and provide insight into the quality and reproducibility of the technological process. The type and behavior of I–V characteristics are influenced by the design and technological features of a GaN HEMT. Measurements of I-V characteristics in continuous and pulsed operation modes provide more details about the electrical and thermal characteristics of the devices under study.

scholarly journals Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

2021 ◽  
Vol 24 (04) ◽  
pp. 407-412
Author(s):  
A.V. Naumov ◽  
◽  
V.V. Kaliuzhnyi ◽  
S.A. Vitusevich ◽  
H. Hardtdegen ◽  
...  
Keyword(s):  
Electron Transport ◽  
Space Charge ◽  
Ultraviolet Excitation ◽  
Gan Hemt ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Uv Excitation ◽  
Biosensor Applications ◽  
Space Charge Limited

In this work, we have investigated the features of electron transport in AlGaN/GaN transistor-like heterostructures with nanowires of different width. These nanostructures are studied extensively because of their great electronic and sensing advantages for electronic biosensor applications. We study the depletion effects and impact of ultraviolet excitation on the electron transport in sets of nanowires of different width from 1110 down to 185 nm. We have found significant difference in electrical characteristic’s behavior between wide (1110…480 nm) and narrow (280…185 nm) nanowires and have observed regions related to space-charge-limited transport for the narrowest nanowires. Also, we obtained evident dependence of nanowire’s current-voltage characteristics on the wavelength and energy of UV excitation. External UV excitation allows us to control the depletion widths in nanowires and effectively tune space-charge-limited transport.

EFFECT OF LIGHT IRRADIATION ON ELECTRIC-FIELD-INDUCED RESISTANCE SWITCHING PHENOMENON IN PLANAR VO2/c-Al2O3 STRUCTURE

2009 ◽  
Vol 08 (01n02) ◽  
pp. 147-150 ◽  
Author(s):  
NURUL EZREENA MOHAMAD ◽  
KUNIO OKIMURA ◽  
JOE SAKAI
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Applied Voltage ◽  
Resistance Switching ◽  
Light Irradiation ◽  
Switching Phenomenon ◽  
Current Voltage ◽  
Jump Phenomena ◽  
Current Voltage Characteristics ◽  
Effect Of Light

A simple device of VO 2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current–voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 808-811
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Ming Hung Weng ◽  
Filippo Giannazzo ◽  
Vito Raineri
Keyword(s):  
Structural Properties ◽  
Surface Defects ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Near Surface ◽  
Channel Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers were investigated. A morphological and structural analysis of the samples showed the presence of “V-shaped” near-surface defects in the AlGaN layer, with a preferential orientation along the miscut direction [11-20]. In the presence of these defects an anisotropy of the current-voltage characteristics of high electron mobility transistors (HEMTs), fabricated with two different orientations, was observed. The sheet carrier density ns and the channel mobility n were determined from the device characteristics. The results were discussed considering the possible implications for AlGaN/GaN HEMT technology.

Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors

2012 ◽  
Vol 112 (9) ◽  
pp. 094506 ◽  
Author(s):  
F. Principato ◽  
G. Gerardi ◽  
A. A. Turturici ◽  
L. Abbene
Keyword(s):  
Time Dependent ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics
Sign in / Sign up

Export Citation Format

Share Document