Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
2011 ◽
Vol 679-680
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pp. 808-811
Keyword(s):
Gan Hemt
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In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers were investigated. A morphological and structural analysis of the samples showed the presence of “V-shaped” near-surface defects in the AlGaN layer, with a preferential orientation along the miscut direction [11-20]. In the presence of these defects an anisotropy of the current-voltage characteristics of high electron mobility transistors (HEMTs), fabricated with two different orientations, was observed. The sheet carrier density ns and the channel mobility n were determined from the device characteristics. The results were discussed considering the possible implications for AlGaN/GaN HEMT technology.
2015 ◽
Vol 54
(2)
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pp. 020301
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2013 ◽
Vol 60
(10)
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pp. 3351-3357
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1989 ◽
Vol 36
(10)
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pp. 2299-2306
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2012 ◽
Vol 46
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pp. 174-176
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