Manipulation of optical and electrical properties of ZnO thin films via embedded nano structure

2018 ◽  
Vol 32 (19) ◽  
pp. 1840039 ◽  
Author(s):  
Dongyan Zhang ◽  
Ri-Ichi Murakami
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Wide Bandgap ◽  
Nano Particles ◽  
Zno Thin Films ◽  
Nano Structure ◽  
Smart Windows ◽  
Conducting Oxides ◽  
Band Engineering ◽  
Metal Nano Particles

The semiconductor ZnO has gained great interest in the past decades because of its wide bandgap and large exciton binding energy. Especially, the doping and embedded metal nano-particles methods could improve the conductivity of ZnO thin films, which made it possible to fabricate transparent conducting oxides based on ZnO. In the present study, Al-doped ZnO thin layer was employed to manipulate the electrical and optical properties. The band engineering in ZnO makes it possible to manipulate the absorption, emission, reflection spectral of ZnO via the embedded quantum well layer. The ZnO thin films with excellent performance in electrical conductivity and optical transmittance are promising to be applied in the devices including the lager flat screen, touch panel, portable digital device and smart windows. In the present study, we summarized the recent progress in ZnO with embedded metal nanoparticles and application in TCOs.

Characterization of Ag Doped P-Type ZnO Thin Films Prepared by Electrostatic-Enhanced Ultrasonic Spray Pyrolysis

2011 ◽  
Vol 299-300 ◽  
pp. 436-439 ◽  
Author(s):  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Bin Wang ◽  
Yue Zhao ◽  
Yun Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Optical Transmittance ◽  
Nano Particles ◽  
Zno Thin Films ◽  
Ultrasonic Spray ◽  
P Type ◽  
O Phase

In this paper, the structure, electrical and optical properties and stabilities of Ag doped p-type ZnO thin films, prepared by electrostatic-enhanced ultrasonic spray pyrolysis were investigated. XRD and Hall data analyses indicated that the resistivity of 4at. % Ag doped p-type ZnO was low, without Ag2O phase separation. The optical transmission spectra illustrated that optical band gaps decreases with the gradual increase of Ag dopant. Moreover, ZnO: Ag films placed for 10 days still showed p-type, but the optical transmittance decreased, suggesting that AgZn in the ZnO: Ag thin films captured electrons to generate Agi, which reunited to be Ag nano-particles and decreased the optical transmittance of ZnO: Ag.

STRUCTURAL AND OPTICAL PROPERTIES OF UNDOPED AND SILVER, LITHIUM AND COBALT-DOPED ZnO THIN FILMS

2019 ◽  
Vol 27 (04) ◽  
pp. 1950138
Author(s):  
FATMA MEYDANERİ TEZEL ◽  
İ. AFŞIN KARİPER
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Refraction Index ◽  
Zno Thin Films ◽  
High Temperature Furnace ◽  
Doped Zno ◽  
Ray Patterns ◽  
Temperature Furnace

Undoped and silver, lithium and cobalt-doped ZnO thin films have been successfully deposited on glass by chemical bath deposition (CBD). The reaction temperature was 50∘C and the films were annealed at 400∘C for 4[Formula: see text]h in a high temperature furnace. UV/VIS spectrum was used to determine optical transmittance, optical band gap ([Formula: see text] and absorbance values of Ag:ZnO, Co:ZnO, Li:ZnO and undoped ZnO thin films. Optical band gap ([Formula: see text] and absorbance values of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were found as 0.0158, 0.0064, 0.2638, 0.0956 and 3.24, 3.13, 3.27, 2.96 eV, respectively. Extinction coefficients and refraction indexes of the films were found to be 0.0096, 0.0038, 0.0068, 0.019 (extinction coefficient) and 1.26, 1.14, 1.66, 2.33 (refraction index), respectively. X-ray patterns of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were confirmed as amorphous.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

Decrease in Work Function of Boron Ion-Implanted ZnO Thin Films

2007 ◽  
Vol 7 (11) ◽  
pp. 4021-4024 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Work Function ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Visible Wavelength Range ◽  
Ion Implanted

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA)time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.

TRANSPARENT ZINC OXIDE THIN FILMS PREPARED BY PLD WITH DIFFERENT OXYGEN PRESSURES

2007 ◽  
Vol 14 (03) ◽  
pp. 425-429
Author(s):  
KASIMAYAN UMA ◽  
MOHAMAD RUSOP ◽  
TETSUO SOGA ◽  
TAKASHI JIMBO
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
High Oxygen Pressure ◽  
High Pressure Oxygen

ZnO thin films were prepared on silicon (001) and corning glass substrates using Pulsed laser deposition (PLD) technique with different oxygen pressures. The microstructure, crystallinity, and resistivity of the films depend on the oxygen pressure used. The effects of the films grown at room temperature and at 500°C with different oxygen pressures have been investigated by analyzing the optical and electrical properties of the film. The XRD analysis showed that the high intensity of c-axis orientation of ZnO thin films was obtained under high oxygen pressure and this leads to greater electrical and optical properties. By applying high pressure oxygen, the resistivity value was decreased and optical transmittance became higher in the visible region. The surface morphology of the films showed that the smooth surface was observed without any cracks.

scholarly journals Synthesis, Characterization and Antibacterial Application of ZnO Thin films

2021 ◽  
pp. 13-16
Author(s):  
A M Wagh and N U Patil
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Antibacterial Activity ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Diffraction Method ◽  
Nano Particles ◽  
Zno Thin Films ◽  
Zno Film

The objective of this study is to synthesize ZnO nano particles in form thin film on glass substrate and study antibacterial active of such films. ZnO thin films were prepared by spray pyrolysis technique using zinc acetate and isopropyl alcohol as precursor in the temperature range 375̊C to 425̊C. The optical properties of the film were studied on UV/VIS/NIR spectrophotometer. The energy gap of the film is evaluated and it is found to be 3.31 eV. The polycrystalline nature of the ZnO film was confirmed by structural analysis by Xray diffraction method and the grain size is determined. It is found to be 50nm. The electrical resistivity of the film was measured by four probe method at different temperatures and it is found that electrical resistivity varying in the range 103 to 104 Ω–cm. we studied the antibacterial activity of ZnO thin film against gram-negative bacteria. Escherichia coli (E- coli) were used as test micro organisms. It is found that ZnO film enhanced the significant antibacterial activity.

scholarly journals PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sudjatmoko Sudjatmoko ◽  
Suryadi Suryadi ◽  
Widdi Usada ◽  
Tono Wibowo ◽  
Wiryoadi Wiryoadi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Aluminium Doping ◽  
Deposited Films ◽  
Heated Glass

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING. Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering using targets composed of ZnO and Al2O3. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. The surface morphology and crystalline structure, as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis were observed that the optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when deposition temperature was raised from 200 to 400 oC. Films grown on 300 oC substrates showed a high conductivity value of 0.2 x 102 -1cm-1 and a visible transmission of about 85%. The growth temperatures of 300 oC, aluminium doping levels of 0.9 wt.% were preferable to achieve ZnO:Al films with optical and structural qualities as required for solar cell applications.

Effects of Thickness and Preheated Temperature on Grains Orientation of 2D-ZnO Nanostructure and their Photocatalytic Activity

2021 ◽  
Vol 66 ◽  
pp. 113-128
Author(s):  
Mahdia Toubane ◽  
Assia Azizi ◽  
D. Houanoh ◽  
R. Tala-Ighil ◽  
F. Bensouici ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Heating Temperature ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Blue Dye ◽  
Zno Nanostructure ◽  
Number Of Layers

The effects of pre-heating temperature and thickness of layers on (002) preferred orientation of ZnO thin films and their photocatalytic activity are reported. All films crystallize into a Zincite-type structure. With increasing pre-heating temperature, the evolution from (002) to (101) diffraction peaks indicates change in growth mode of ZnO films. Pre-heating at 100°C is the most favourable for highly oriented ZnO thin films along (002) plane whereas all films deposited with different number of layers are oriented along (101) plane. The crystallite size is found to be in the range 20 - 32 nm. The observed average optical transmittance for these films is higher than 90% in the visible range. The energy band gap decreases with increasing number of layers but increases with increasing pre-heating temperatures. Wettability tests of ZnO thin films surface show a hydrophobic aspect for all films. The film pre-heated at 400°C with 223nm of thickness exhibits the highest degradation of methyl blue dye of 94% with high levels of photostability over five cycles.

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