NOVEL ROOM TEMPERATURE ELECTROCHEMICAL DEPOSITION OF HIGH TEMPERATURE SUPERCONDUCTING FILMS

2004 ◽  
Vol 18 (12n13) ◽  
pp. 505-549 ◽  
Author(s):  
S. H. PAWAR ◽  
P. M. SHIRAGE ◽  
D. D. SHIVAGAN ◽  
A. B. JADHAV
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Deposition Process ◽  
Superconducting Films ◽  
Dimensional Structure ◽  
Hetero Structure ◽  
Review Reports ◽  
Low Dimensional

The present review reports the innovative attempts made in the synthesis of a variety of high T c superconductor families in the form of thin films by electrochemical techniques. Summarizing the brief background of electrochemical deposition process, the growth mechanism of high T c superconducting films has been explained. The successful stories of room temperature electrochemical deposition of RE - Ba 2 Cu 3 O 7-δ, Bi – Sr – Ca – CuO , Tl – Ba – Ca – CuO , Hg – Ba – Ca – CuO and MgB2 superconductors in the form of thin films on silver substrates have been summarized. The room temperature electrochemical synthesis technique has helped to form a low-dimensional structure at the interface of Al/Tl-2223 hetero structure, which leads to a pathway for high T c and J c . The photoinduced effects of a variety of heterostructures formed with HTSC systems and CdSe semiconductor are also described.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Fabrication of an Apatite/Collagen Composite Coating on the NiTi Shape Memory Alloy through Electrochemical Deposition and Coating Characterisation

2009 ◽  
Vol 618-619 ◽  
pp. 319-323 ◽  
Author(s):  
Parama Chakraborty Banerjee ◽  
Tao Sun ◽  
Jonathan H.W. Wong ◽  
Min Wang
Keyword(s):  
Shape Memory Alloy ◽  
Shape Memory ◽  
Composite Coating ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Composite Coatings ◽  
Deposition Process ◽  
Niti Shape Memory Alloy ◽  
X Ray ◽  
Niti Sma

To improve the biocompatibility and bioactivity of NiTi shape memory alloy (SMA), apatite/collagen composite coatings were fabricated on the surface of NiTi SMA at room temperature using the electrochemical deposition technique. Spherical apatite particles and fibrous collagen that formed the composite coating were visible under scanning electron microscope (SEM). The Ca/P ratio of the apatite component in the coating, as determined by energy dispersive X-ray spectroscopy (EDX), was about 1.38 which is slightly higher than that of octocalcium phosphate (OCP). X-ray diffraction result showed that the apatite was amorphous, which was due to the low temperature (i.e., room temperature) deposition process. The structure of the composite coatings was further characterized using Fourier transform infrared reflection spectroscopy (FTIR). It was also found that, compared to bare NiTi SMA samples, the wettability of as-deposited samples was increased because of the formation of the composite coating.

Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

INTERFACE AND STEP LOCALIZED PHONON MODES BETWEEN TWO TRUNCATED THIN FILMS

2004 ◽  
Vol 11 (02) ◽  
pp. 155-165
Author(s):  
M. TAMINE ◽  
H. BOUMRAR ◽  
O. RAFIL
Keyword(s):  
Thin Films ◽  
Strain Field ◽  
Phonon Dispersion ◽  
Harmonic Approximation ◽  
Elastic Force ◽  
Force Constants ◽  
Step Edge ◽  
Dimensional Structure ◽  
Phonon Modes ◽  
Low Dimensional

We have carried out the calculations of vibrational dynamics in the low-dimensional structure with dimensions on the nanometer scale by using the matching formalism. The nanostructure model consists in the surface step produced at a perpendicular interface between two truncated thin films with different thickness. The theoretical approach determines the vibrational field in the direction where the translation symmetry is broken. The calculation concerns in particular the phonon dispersion curves localized on the interface and step edge, and employs the matching procedure in the harmonic approximation. The nearest and next nearest neighbors elastic force constants between the mass sites in the model, as well as a modification of the elastic strain field induced by the presence of the step, are considered. Analytic expressions are obtained for the phonon dispersion relations of the localized surface and edge elastic waves and the bulk phonons near a step. The breakdown of translational symmetry perpendicular to the step edge gives rise to several Raleigh-like branches localized in the neighborhood of step and interface. The effects of varying the elastic force constants at an interface and the strain field parameter near the step are studied. These factors influence the number of localized modes as well as their frequency, intensity and attenuation.

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

2010 ◽  
Vol 25 (10) ◽  
pp. 1936-1942 ◽  
Author(s):  
Deuk Ho Yeon ◽  
Bhaskar Chandra Mohanty ◽  
Yeon Hwa Jo ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Surface Coverage ◽  
Hole Concentration ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Average Size

An effective way to prepare a robust CuInSe2 (CIS) target for subsequent vapor depositions of thin films is suggested in this work. The technique involves addition of excess Se to presynthesized CIS powder followed by cold pressing and sintering at a temperature as low as 300 °C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300 °C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a hole concentration of ˜3 × 1019 cm−3 and a Hall mobility of ˜2 cm2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 × 10−1 to ˜7.5 × 108 Ω·cm, which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

Aerosol-Assisted CVD of SnO2 Thin Films for the Room-Temperature Detection of Hydrogen Sulfide

2013 ◽  
Vol 543 ◽  
pp. 422-425
Author(s):  
Huan Liu ◽  
Min Li ◽  
Jiu Xiao Wan ◽  
Jun Zhao ◽  
Qiu Yun Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Room Temperature ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Temperature Detection ◽  
Low Concentrations ◽  
Initial Resistance ◽  
Deposition Conditions

High-quality SnO2 thin-film materials capable of detecting H2S gas of low concentrations at room temperature was demonstrated in this paper. We employed aerosol-assisted chemical vapor deposition process for the deposition of SnO2 thin films on alumina substrates with pre-patterned electrodes. The gas-sensing performances of the films prepared under different deposition conditions were systematically compared and analyzed. When SnCl2·2H2O was used as the precursor, a response sensitivity of 98.4 toward 50 ppm of H2S at room temperature was achieved. At room temperatures, the resistance upon the H2S gas exposure could recover to 90% of the initial resistance of the sensor when the H2S gas flow was turned off.

Electrochemical Deposition of Ba1-xSrxMoO4 Thin Films at Room Temperature

2002 ◽  
Vol 755 ◽  
Author(s):  
D.J. Gao ◽  
D.Q. Xiao ◽  
J. Bi ◽  
P. Yu ◽  
W. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Unit Cell ◽  
Tetragonal Structure ◽  
Unit Cell Parameters ◽  
Cell Parameters

ABSTRACTAseries of well crystallized Ba1-xSrxMoO4 (0≤×≤1) films were prepared on molybdenum substrates in electrolytes embodied Ba2+ and Sr2+ions by electrochemical deposition at room temperature. The composition x is controlled through the starting concentrations of Ba2+ and Sr2+ ions. The measurements of XRD, SEM and XPS for these materials were carried out. The XRD analyses show that the films are good crystalline with single tetragonal structure of scheelite-type, and the a and c axes of the unit cell parameters of the films decrease with the increasing of Sr2+ concentration in the starting electrolytes; the XPS analyses reveal that the composition of the Ba1-xSrxMoO4 films is in agreement with stoichiometry, and the SEM photographs show that the films are condensed deposited.

The influence of various LiF concentrations on the cathodic electrochemical behavior at the tungsten electrode in Na3AlF6–Al2O3 molten salt

RSC Advances ◽  
2015 ◽  
Vol 5 (30) ◽  
pp. 23915-23921
Author(s):  
Shaohu Tao ◽  
Yuezhong Di ◽  
Kejia Liu ◽  
Kun Zhao ◽  
Naixiang Feng ◽  
...  
Keyword(s):  
Molten Salt ◽  
Electrochemical Deposition ◽  
Electrochemical Behavior ◽  
Electrochemical Techniques ◽  
Deposition Process ◽  
Tungsten Electrode

The electrochemical deposition process of Al metal at the tungsten electrode in the melts of Na3AlF6–Al2O3 with various LiF concentrations was investigated at 1253 K by various electrochemical techniques.

Fabrication of CaWO4:Eu3+ Thin Films via Electrochemical Methods Assisted by a Novel Post Treatment

2011 ◽  
Vol 194-196 ◽  
pp. 2458-2461 ◽  
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao ◽  
Jian Xiong Yuan ◽  
Qing Hua Zhang ◽  
Yan Hong Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Surface Region ◽  
Luminescent Properties ◽  
Emission Peak ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4 thin films directly through electrochemical techniques. A novel post processing has been proposed to synthesize CaWO4:Eu3+ thin films at room temperature. X-ray diffraction, X-ray photoelectron spectrometry, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that Eu3+-doped CaWO4 films have a tetragonal phase; the content of Eu in the near surface region is much higher than that of the bulk; under the excitation of 310 nm, a sharp emission peak at 616 nm has been observed for Ca0.9WO4:Eu0.13+ thin films.

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