THE ELECTRON TRANSPORT IN A NANOSTRUCTURE MODULATED BY THE MAGNETIC FIELD AND THE δ-DOPING

2013 ◽  
Vol 27 (24) ◽  
pp. 1350175
Author(s):  
JIAN-DUO LU ◽  
BIN XU ◽  
WEI ZHENG
Keyword(s):  
Electron Transport ◽  
Transport Mechanism ◽  
Transmission Probability ◽  
Spintronic Devices ◽  
Magnetic Nanostructure ◽  
Semiconductor Heterostructure ◽  
Spin Dependent Transport ◽  
Electron Transport Properties ◽  
Dependent Transport ◽  
The Magnetic Field

We theoretically investigate the effect of the δ-doping on the electron transport in a magnetic nanostructure, which can be experimentally realized by depositing one ferromagnetic stripe on the top of a semiconductor heterostructure. We find that the position and the strength of the δ-doping as well as the distance between the two magnetic fields play an important role on the electron transport properties such as the transmission probability, the conductance and the spin polarization. These interesting results may be very helpful for analyzing the spin-dependent transport mechanism of the electron and making the new types of the spintronic devices.

Spin-polarized transport of the electron in a device with a Schottky metal stripe and a δ-doping

2018 ◽  
Vol 32 (15) ◽  
pp. 1850186 ◽  
Author(s):  
Meng Zhao ◽  
Jian-Duo Lu ◽  
Shun-Jin Peng ◽  
Hong-Yu Liu
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Electrical Potential ◽  
Transmission Probability ◽  
Spintronic Devices ◽  
Electron Transmission ◽  
Spin Polarized ◽  
Electron Transport Properties ◽  
Polarized Transport ◽  
Spin Polarized Transport

We theoretically investigate the electron transport properties in a nanostructure modulated by a ferromagnetic stripe (FM) and a Schottky metal stripe (SM) as well as a [Formula: see text]-doping with the help of transfer-matrix method. It is found that the position and the weight of the [Formula: see text]-doping, the width of the SM and the electrical potential, all play an important role in the electron transmission probability and the spin polarization. Therefore, we can control the electron transport properties through adjusting the SM and the [Formula: see text]-doping. These interesting phenomena may be very helpful for designing the spintronic devices.

Strain modulation on spin transport properties of PTB junction with MoC2 electrodes

2021 ◽  
Author(s):  
Yaoxing Sun ◽  
Bei Zhang ◽  
shidong zhang ◽  
Dan Zhang ◽  
Jiwei Dong ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electron Transport ◽  
Transport Properties ◽  
Density Functional ◽  
Spin Transport ◽  
Functional Theory ◽  
Spintronic Devices ◽  
Spin Polarized ◽  
Electron Transport Properties ◽  
Strain Modulation

Based on MoC2 nanoribbons and poly-(terphenylene-butadiynylene) (PTB) molecules, we designed MoC2-PTB molecular spintronic devices and investigated their spin-dependent electron transport properties by using spin-polarized density functional theory and non-equilibrium Green's...

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

scholarly journals Spin-dependent transport and functional design in organic ferromagnetic devices

2017 ◽  
Vol 8 ◽  
pp. 1919-1931 ◽  
Author(s):  
Guichao Hu ◽  
Shijie Xie ◽  
Chuankui Wang ◽  
Carsten Timm
Keyword(s):  
High Performance ◽  
Spin Current ◽  
Spin Correlation ◽  
Functional Design ◽  
Strong Electron ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Organic Ferromagnets ◽  
Dependent Transport ◽  
Orbital Analysis

Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

EFFECTS OF THE MIXED Cu/O LAYER ON THE TRANSPORT PROPERTIES OF Cu/EuO-BASED TUNNEL JUNCTIONS

2017 ◽  
Vol 24 (08) ◽  
pp. 1750120 ◽  
Author(s):  
C. J. DAI ◽  
X. H. YAN ◽  
Y. XIAO ◽  
J. R. YUAN ◽  
M. X. BI ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Spintronic Devices ◽  
Valance Band Maximum ◽  
Spin Dependent Transport ◽  
Filtering Effect ◽  
Dependent Transport ◽  
Non Equilibrium Green’S Function ◽  
The Eu ◽  
Majority Spin

The spin-dependent transport properties of Cu/EuO-based tunnel junctions are investigated by means of the first-principle calculations combined with the non-equilibrium Green’s function (NEGF) method. It is found that the Cu/EuO-based junctions exhibit excellent spin-filtering effect. Furthermore, the mixed Cu/O layer enhances the tunneling of the majority spin through the EuO barrier for the junctions with Cu/O layers due to the fact that the valance-band maximum of the Eu-4[Formula: see text] states shifts to high energies with respect to the Fermi level for these junctions. These results permit the existence of the mixed Cu/O layer in Cu/EuO-based tunnel junctions and promote future applications of these tunnel junctions in spintronic devices.

Study of the Effect of Cation Non-Stoichiometry of (La0.85Sr0.15)yMnO3 Manganite Single Crystals on the Magnetic Properties

2012 ◽  
Vol 194 ◽  
pp. 108-111
Author(s):  
Dmitry Shulyatev ◽  
Mariya Lyange ◽  
Anna Pestun ◽  
Yakov M. Mukovskii ◽  
Eun Sang Choi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Electron Transport ◽  
Single Crystals ◽  
Orbital Ordering ◽  
Electron Transport Properties ◽  
Mn Content ◽  
Ferromagnetic Ordering ◽  
Two Peaks ◽  
The Magnetic Field

The influence of cation inhomogeneity on magnetic and electron transport properties of (La0.85Sr0.15)yMnO3 (y=0.92-0.97) single crystals were studied. It was found that both the temperature of ferromagnetic ordering TC and the temperature of orbital ordering TOO are increased with the Mn content decreasing. For all six samples studied two peaks on magnetoresistance curves were observed: the first near TC and the second close to TOO. The magnetic field does not affect the position of the former maximum, while it moves the latter towards lower temperatures.

Wave vector filtering effect for electrons in magnetically and electrically confined semiconductor heterostructure

2020 ◽  
Vol 34 (06) ◽  
pp. 2050080
Author(s):  
Meng-Rou Huang ◽  
Mao-Wang Lu ◽  
Xin-Hong Huang ◽  
Dong-Hui Liang ◽  
Zeng-Lin Cao
Keyword(s):  
Wave Vector ◽  
Applied Voltage ◽  
Transmission Probability ◽  
Two Dimensional ◽  
Electron Transmission ◽  
Magnetic Nanostructure ◽  
Semiconductor Heterostructure ◽  
Filtering Efficiency ◽  
Parallel Configuration ◽  
Filtering Effect

Wave vector filtering effect is explored for electrons in magnetically and electrically confined semiconductor heterostructure, which can be realized experimentally by depositing a ferromagnetic stripe and a Schottky metal stripe in parallel configuration on the surface of [Formula: see text] heterostructure. Adopting improved transfer matrix method to solve Schrödinger equation, electronic transmission coefficient is calculated exactly, and then wave vector filtering efficiency is obtained by differentiating transmission probability over longitudinal wave vector. An obvious wave vector filtering effect appears, due to an essentially two-dimensional process for electron transmission through a magnetic nanostructure. Besides, wave vector filtering efficiency is associated closely with width, position and externally applied voltage of Schottky metal stripe, which makes wave vector filtering effect become controllable and results in a manipulable momentum filter for nanoelectronics.

Electron-spin polarization in both magnetically and electrically modulated nanostructures

2005 ◽  
Vol 83 (3) ◽  
pp. 219-227
Author(s):  
Mao-Wang Lu
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
High Energy ◽  
Electron Spin Polarization ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
73.40 Gk ◽  
Spin Polarization Effect ◽  
Dependent Transport ◽  
Electric Barrier

We investigate theoretically the spin-dependent transport properties of electrons in realistic magnetic-electric-barrier (MEB) nanostructures produced by the deposition, onto a heterostructure, of a metallic ferromagnetic stripe. We find the degree of electron-spin polarization to be closely tied to the voltage applied to the stripe, despite the fact that this voltage in itself induces no spin-polarization effect. As a positive (negative) voltage is applied, the electron-spin polarization shifts in the low- (high-) energy direction and increases (decreases). Our results imply that the degree of electron-spin polarization can be tuned through the applied voltage. This implication might prove useful in the design and application of spintronic devices based on magnetic-barrier nanostructures. PACS Nos.: 73.40.Gk, 73.23.-b, 75.70.Cn

Spin-dependent transport properties of a chromium porphyrin-based molecular embedded between two graphene nanoribbon electrodes

RSC Advances ◽  
2014 ◽  
Vol 4 (104) ◽  
pp. 60376-60381 ◽  
Author(s):  
Tong Chen ◽  
Lingling Wang ◽  
Xiaofei Li ◽  
Kaiwu Luo ◽  
Liang Xu ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electron Transport ◽  
Transport Properties ◽  
Density Functional ◽  
Theoretical Study ◽  
Graphene Nanoribbon ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

By using the nonequilibrium Green's function formalism combined with the density-functional theory, we present a theoretical study of the spin-dependent electron transport of a chromium porphyrin-based molecule device.

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