Study of the photoluminescence properties of Eu2+-doped Ca(AlxGa1−x)2S4 solid solutions at high excitation intensity and low temperature

2018 ◽  
Vol 32 (25) ◽  
pp. 1850306
Author(s):  
E. G. Asadov ◽  
O. B. Tagiev ◽  
K. O. Tagiev ◽  
G. S. Hadjieva ◽  
M. S. Leanenia ◽  
...  
Keyword(s):  
Power Density ◽  
Solid Solutions ◽  
Room Temperature ◽  
Emission Spectra ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Excitation Power Density ◽  
Photoluminescence Properties ◽  
First Time ◽  
Extreme Stability

The investigation of photoluminescence (PL) properties of Ca(Al[Formula: see text]Ga[Formula: see text]S4:Eu[Formula: see text] solid solutions with [Formula: see text] = 0, 0.1, 0.2 and 0.3 synthesized for the first time was performed in wide temperature and excitation power density ranges. It is shown that PL intensity decreases by only 20–30% for different [Formula: see text] in the temperature range from 10 K to 300 K. The extreme stability of shape and position of the emission spectra was found in the range of excitation power density from [Formula: see text] W/cm2 to [Formula: see text] W/cm2 by nanosecond pulsed radiation. The reversible PL efficiency droop was only above 104 W/cm2 of excitation power density. The PL decay time constant was found to be of about 560 ns to 595 ns for [Formula: see text] ranging between 0.1 and 0.3 at room temperature.

scholarly journals Спонтанное и стимулированное излучение в тонких пленках твердых растворов Cu(In-=SUB=-1-x-=/SUB=-Ga-=SUB=-x-=/SUB=-)(S-=SUB=-y-=/SUB=-Se-=SUB=-1-y-=/SUB=-)-=SUB=-2-=/SUB=- в составе солнечных элементов

2020 ◽  
Vol 54 (10) ◽  
pp. 1058
Author(s):  
И.Е. Свитенков ◽  
В.Н Павловский ◽  
Е.В. Муравицкая ◽  
Е.В. Луценко ◽  
Г.П. Яблонский ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Continuous Wave ◽  
Emission Spectra ◽  
Excitation Power ◽  
Stimulated Emission ◽  
Excitation Power Density ◽  
Nanosecond Pulsed Laser ◽  
Low Energies ◽  
Direct Band ◽  
Increasing Temperature

The results of a study of the emission spectra of thin nanocrystalline films of Cu(In1-xGax)(SySe1-y)2 (CIGSSe) direct-band-gap solid solutions in the structure of solar cells at ~ 0.5 W/cm2 continuous wave and nanosecond pulsed laser excitation in the range of excitation power density 0.1 - 53 kW/cm2 and temperatures of 10-300 K are presented. It was found that stimulated emission (SE) occurs in thin CIGSSe films in the temperature range from 10 K to 90 K in the spectral region h = 1.062 - 1.081 eV with a minimum threshold pump level of about 1 kW/cm2. It was shown, that, with increasing intensity of the exciting emission, the spontaneous emission bands shift toward higher energies. It was found that the photoluminescence bands at low excitation levels and the SE bands shift with increasing temperature toward higher energies, and the PL bands at high excitation levels shift toward low energies. Possible causes and mechanisms of the influence of temperature and excitation intensity on the spectral positions of spontaneous and SE of the films of solid solutions are discussed.

The sensitization of laser-induced heat of Er3+ doped Y2O3 nanocrystals by codoped with Mn2+

2015 ◽  
Vol 29 (22) ◽  
pp. 1550158
Author(s):  
Yunfeng Bai ◽  
Minjie Luan ◽  
Linjun Li ◽  
Zhelong He ◽  
Dongyu Li
Keyword(s):  
Power Density ◽  
Thermal Emission ◽  
Energy Levels ◽  
Excitation Power ◽  
Threshold Power ◽  
Excitation Power Density ◽  
Ir Laser ◽  
Order Of Magnitude ◽  
Low Threshold ◽  
Density Threshold

Low threshold power density cw laser-induced heat has been observed in [Formula: see text] and [Formula: see text] codoped [Formula: see text] nanocrystals under excitation by a 980 nm IR laser. Codoped [Formula: see text] remarkably reduces the power density threshold of laser-induced heat compared with [Formula: see text] doped [Formula: see text] nanocrystals. When the excitation power density exceed [Formula: see text], [Formula: see text] codoped [Formula: see text] nanocrystals emit strong blackbody radiation. The thermal emission of [Formula: see text] should originate from the multiphonon relaxation between neighboring energy levels. One additional UC-PL enhancement is observed. The UC-PL intensity can be enhanced by an order of magnitude through high temperature calcination caused by light into heat.

Photoluminescence of Ca4Ga2S7:Eu2+ in wide excitation intensity and temperature range

2021 ◽  
pp. 2150392
Author(s):  
B. D. Urmanov ◽  
M. S. Leanenia ◽  
G. P. Yablonskii ◽  
O. B. Taghiyev ◽  
K. O. Taghiyev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Excitation Intensity ◽  
Temperature Measurements ◽  
Constant Time ◽  
Photoluminescence Properties ◽  
Temperature Range ◽  
Chalcogenide Semiconductors ◽  
Time Frames

Photoluminescence properties of [Formula: see text] chalcogenide semiconductors have been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room temperature. This study has shown that as a result of excitation, photoluminescence of [Formula: see text] is characterized by the emission in the interval of 450–575 nm with significant domination in the spectra line at 660 nm. Photoluminescence of [Formula: see text] quenches at wavelengths of 560 nm and 660 nm with constant time frames 258 ns and 326 ns, respectively. Moreover, the temperature measurements of photoluminescence were performed on the samples in the temperature range of 10–300 K.

Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer

1984 ◽  
Vol 23 (Part 1, No. 6) ◽  
pp. 778-779 ◽  
Author(s):  
Chusuke Munakata ◽  
Noriaki Honma ◽  
Hajime Hayakawa
Keyword(s):  
Power Density ◽  
Excitation Power ◽  
Excitation Power Density ◽  
Density Dependent ◽  
Si Wafer

Effect of excitation power density on the upconversion luminescence of LaF3:Yb3+, Er3+ nanocrystals

2009 ◽  
Vol 485 (1-2) ◽  
pp. 493-496 ◽  
Author(s):  
Yuqiu Qu ◽  
Xianggui Kong ◽  
Yajuan Sun ◽  
Qinghui Zeng ◽  
Hong Zhang
Keyword(s):  
Power Density ◽  
Upconversion Luminescence ◽  
Excitation Power ◽  
Excitation Power Density

Hydrothermal Synthesis and Photoluminescence Properties of Ca(MoO4)x(WO4)(1-X) Microcrystallines

2013 ◽  
Vol 652-654 ◽  
pp. 599-606
Author(s):  
Yan Zhao ◽  
Yan Yan Wei ◽  
Dan Qin ◽  
Xin Lai ◽  
Yun Wu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Uv Light ◽  
Emission Spectra ◽  
Fluorescence Analysis ◽  
Tetragonal Symmetry ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Structure Surface ◽  
Ft Ir

Ca(MoO4)x(WO4)(1-x)solid solution microcrystallines were synthesized by hydrothermal method at 120 °C; the crystal structure, surface morphology and room temperature photoluminescence properties of the as-synthesized microcrystallines were investigated by through X-ray diffraction (XRD), scanning electron micrograph (SEM), Fourier transform infrared spectroscopy (FT-IR) and fluorescence analysis (FA), respectively. Our results show that the obtained Ca(MoO4)x(WO4)(1-x)microcrystallines are single-phase scheelite structure with tetragonal symmetry. The grain size of the Ca(MoO4)x(WO4)(1-x) microcrystallines gradually increases with the increasing x (except x=0) and their agglomeration also becomes serious with x increasing. Under excited by 245 nm or 280 nm ultraviolet light (UV-light) at room temperature, the emission spectra of the Ca(MoO4)x(WO4)(1-x) microcrystallines vary slightly from 410nm to 490nm with increasing x. Whereas the emission intensity of Ca(MoO4)x(WO4)(1-x) microcrystallines changed markedly, and it increases with the increasing x (x＞0).

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