scholarly journals Спонтанное и стимулированное излучение в тонких пленках твердых растворов Cu(In-=SUB=-1-x-=/SUB=-Ga-=SUB=-x-=/SUB=-)(S-=SUB=-y-=/SUB=-Se-=SUB=-1-y-=/SUB=-)-=SUB=-2-=/SUB=- в составе солнечных элементов

2020 ◽  
Vol 54 (10) ◽  
pp. 1058
Author(s):  
И.Е. Свитенков ◽  
В.Н Павловский ◽  
Е.В. Муравицкая ◽  
Е.В. Луценко ◽  
Г.П. Яблонский ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Continuous Wave ◽  
Emission Spectra ◽  
Excitation Power ◽  
Stimulated Emission ◽  
Excitation Power Density ◽  
Nanosecond Pulsed Laser ◽  
Low Energies ◽  
Direct Band ◽  
Increasing Temperature

The results of a study of the emission spectra of thin nanocrystalline films of Cu(In1-xGax)(SySe1-y)2 (CIGSSe) direct-band-gap solid solutions in the structure of solar cells at ~ 0.5 W/cm2 continuous wave and nanosecond pulsed laser excitation in the range of excitation power density 0.1 - 53 kW/cm2 and temperatures of 10-300 K are presented. It was found that stimulated emission (SE) occurs in thin CIGSSe films in the temperature range from 10 K to 90 K in the spectral region h = 1.062 - 1.081 eV with a minimum threshold pump level of about 1 kW/cm2. It was shown, that, with increasing intensity of the exciting emission, the spontaneous emission bands shift toward higher energies. It was found that the photoluminescence bands at low excitation levels and the SE bands shift with increasing temperature toward higher energies, and the PL bands at high excitation levels shift toward low energies. Possible causes and mechanisms of the influence of temperature and excitation intensity on the spectral positions of spontaneous and SE of the films of solid solutions are discussed.

Study of the photoluminescence properties of Eu2+-doped Ca(AlxGa1−x)2S4 solid solutions at high excitation intensity and low temperature

2018 ◽  
Vol 32 (25) ◽  
pp. 1850306
Author(s):  
E. G. Asadov ◽  
O. B. Tagiev ◽  
K. O. Tagiev ◽  
G. S. Hadjieva ◽  
M. S. Leanenia ◽  
...  
Keyword(s):  
Power Density ◽  
Solid Solutions ◽  
Room Temperature ◽  
Emission Spectra ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Excitation Power Density ◽  
Photoluminescence Properties ◽  
First Time ◽  
Extreme Stability

The investigation of photoluminescence (PL) properties of Ca(Al[Formula: see text]Ga[Formula: see text]S4:Eu[Formula: see text] solid solutions with [Formula: see text] = 0, 0.1, 0.2 and 0.3 synthesized for the first time was performed in wide temperature and excitation power density ranges. It is shown that PL intensity decreases by only 20–30% for different [Formula: see text] in the temperature range from 10 K to 300 K. The extreme stability of shape and position of the emission spectra was found in the range of excitation power density from [Formula: see text] W/cm2 to [Formula: see text] W/cm2 by nanosecond pulsed radiation. The reversible PL efficiency droop was only above 104 W/cm2 of excitation power density. The PL decay time constant was found to be of about 560 ns to 595 ns for [Formula: see text] ranging between 0.1 and 0.3 at room temperature.

scholarly journals Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors

2018 ◽  
Vol 85 (2) ◽  
pp. 267-273
Author(s):  
I. E. Svitsiankou ◽  
V. N. Pavlovskii ◽  
E. V. Lutsenko ◽  
G. P. Yablonskii ◽  
A. V. Mudryi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Solid Solutions ◽  
Stimulated Emission ◽  
Direct Band Gap ◽  
Direct Band

The sensitization of laser-induced heat of Er3+ doped Y2O3 nanocrystals by codoped with Mn2+

2015 ◽  
Vol 29 (22) ◽  
pp. 1550158
Author(s):  
Yunfeng Bai ◽  
Minjie Luan ◽  
Linjun Li ◽  
Zhelong He ◽  
Dongyu Li
Keyword(s):  
Power Density ◽  
Thermal Emission ◽  
Energy Levels ◽  
Excitation Power ◽  
Threshold Power ◽  
Excitation Power Density ◽  
Ir Laser ◽  
Order Of Magnitude ◽  
Low Threshold ◽  
Density Threshold

Low threshold power density cw laser-induced heat has been observed in [Formula: see text] and [Formula: see text] codoped [Formula: see text] nanocrystals under excitation by a 980 nm IR laser. Codoped [Formula: see text] remarkably reduces the power density threshold of laser-induced heat compared with [Formula: see text] doped [Formula: see text] nanocrystals. When the excitation power density exceed [Formula: see text], [Formula: see text] codoped [Formula: see text] nanocrystals emit strong blackbody radiation. The thermal emission of [Formula: see text] should originate from the multiphonon relaxation between neighboring energy levels. One additional UC-PL enhancement is observed. The UC-PL intensity can be enhanced by an order of magnitude through high temperature calcination caused by light into heat.

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sem Images ◽  
Fluorescence Emission Spectra ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Indium Content ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
High Indium Content
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