CURRENT–VOLTAGE CHARACTERISTICS OF BARIUM POLYMETHACRYLATE

1992 ◽  
Vol 06 (15) ◽  
pp. 955-958 ◽  
Author(s):  
M. H. CHOHAN ◽  
M. ZULFIQAR ◽  
Z. H. SAPRA ◽  
RIZWAN HUSSAIN ◽  
S. ZULFIQAR
Keyword(s):  
Activation Energy ◽  
Voltage Range ◽  
Arrhenius Relation ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current–voltage characteristics of Barium Polymethacrylate (BaPMA) in the form of Al-BaPMA-Al structures have been studied. The currents are measured in the voltage range 10 V–1 kV. At low voltages an ohmic relation is observed and at higher voltages the Poole-Frenkel mechanism is proposed. The mechanism of conduction has been explained on the basis of different current-voltage and current-temperature curves. The activation energy values calculated using Arrhenius relation fall in the range 0.25–2 eV, suggesting a sequence of trapping levels.

scholarly journals I-V measurements of Ge-Se-Sn chalcogenide glassy alloys

2015 ◽  
Vol 9 (1) ◽  
pp. 61-66 ◽  
Author(s):  
Vandana Kumari ◽  
Anusaiya Kaswan ◽  
Dinesh Patidar ◽  
Narendra Saxena ◽  
Kananbala Sharma
Keyword(s):  
Elevated Temperatures ◽  
Low Voltage ◽  
Constant Load ◽  
Dc Conductivity ◽  
Voltage Range ◽  
Glassy Alloys ◽  
Current Voltage ◽  
Maximum Current ◽  
Current Voltage Characteristics ◽  
Minimum Resistance

Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20) glassy thin pellets of diameter 12mm and thickness 1mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300?C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

2021 ◽  
Author(s):  
Denice Feria ◽  
Sonia Sharma ◽  
Yu-Ting Chen ◽  
Zhi-Ying Weng ◽  
Kuo-Pin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Differential Resistance ◽  
Voltage Range ◽  
Current Voltage ◽  
Metal Dichalcogenides ◽  
Current Voltage Characteristics ◽  
Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

ELECTRONIC STRUCTURE AND CONDUCTIVITY OF HYDROCARBON FILMS OBTAINED IN PLASMA DISCHARGES OF TOKAMAK T-10

1970 ◽  
Vol 61 (11) ◽  
Author(s):  
Galina A. Sokolina ◽  
Igor I. Arkhipov ◽  
Nikolay Yu. Svechnikov ◽  
Sergey A. Grashin
Keyword(s):  
Activation Energy ◽  
Electronic Structure ◽  
Temperature Dependence ◽  
Direct Current ◽  
Plasma Discharges ◽  
X Ray ◽  
Hydrocarbon Films ◽  
Direct Current Conductivity ◽  
Current Voltage ◽  
Current Voltage Characteristics

Amorphous hydrocarbon films on silicon substrates obtained in the chamber of tokamak T-10 with space-bounded deuterium plasma by carbon diaphragms were studied. Using the methods of spectrophotometry, ellipsometry, X-ray photoemission spectroscopy and X-ray excited Auger electron spectroscopy, it was established that the refraction and absorption coefficients of films, as well as the parameters of the electronic structure such as the magnitude of the band gap, the fraction of sp2-hybridized carbon and the chemical composition of impurities depend on the characteristics of the discharge in the tokamak. It is shown that the deposited films refer to high-resistance dielectrics, and they can be classified by optical properties as hard or soft amorphous hydrocarbon films, depending on the type of the plasma discharge (pulse working discharge or long-term low-energy cleaning discharge). Wherein, the conductivity of hard films is less than that of soft films, which corresponds to a smaller fraction of sp2-states of carbon in these films and to a higher value of the band gap. The current-voltage characteristics and the temperature dependence of the direct current conductivity of hard and soft films were measured. It was shown that in the temperature range of 293–550 K, the conductivity is determined by the hopping conductivity mechanism over localized states near the Fermi level and the boundaries of the allowed bands. The hopping conductivity mechanism is also indicated by the power law obtained at room temperature at alternating current with a value of a power exponent close to 0.8. The measurement of the current-voltage characteristics and the temperature dependence of the conductivity of hard and soft films showed a significant difference in the activation energy of conductivity and the conductivity at an elevated temperature. The established dependences of the direct current conductivity and the activation energy value of the films on the discharge parameters can be used as diagnostic benchmarks of different types of plasma discharges in a tokamak. Data on the electrical conductivity of the films are analyzed within the framework of the concept of the electronic structure of amorphous non-crystalline materials.  

Influence of Nickel Film Thicknesses on Dark Current-Voltage Characteristics of Silicon Solar Cells

2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dark Current ◽  
Nickel Silicide ◽  
Nickel Film ◽  
Silicon Solar Cells ◽  
Voltage Range ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Current Voltage Characteristics

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.

Analytical model of a-Si/c-Si Hit Solar Cell

1996 ◽  
Vol 420 ◽  
Author(s):  
J. Furlan ◽  
P. Popović ◽  
F. Smole ◽  
M. Topič
Keyword(s):  
Solar Cell ◽  
Order Effects ◽  
Solar Cell Performance ◽  
Voltage Range ◽  
Closed Form Solutions ◽  
Current Voltage ◽  
Cell Current ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Analytical Expressions

AbstractUsing suitable simplifying approximations inside the particular regions of a p-i a-Si/n c-Si heterojunction solar cell, the analytical expressions for the solar cell current-voltage characteristics are derived showing clearly the dominating first-order effects on solar cell performance. The derived closed form solutions indicate that in the useful forward voltage range the largest dark current component of this cell is the interface recombination current and that the main contribution to the photocurrent comes from the light generated holes in the c-Si substrate layer. The transfer of holes across the intrinsic layer and over the ΔEv barrier is strongly suppressed resulting in an attenuation of solar cell dark and photocurrent.

scholarly journals Study of the Electrophysical Properties of Composite Varistors Based on Zinc Oxide and Polymer (Polyaniline)

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Sajedeh Mohammadi Aref ◽  
Hassan Bidadi ◽  
Shamestan Hasanli
Keyword(s):  
Activation Energy ◽  
Zinc Oxide ◽  
Temperature Dependence ◽  
Experimental Work ◽  
Threshold Voltage ◽  
Nonlinear Behavior ◽  
Polymer Content ◽  
Electrophysical Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this experimental work, current-voltage characteristics of composite varisrors prepared on the base of zinc oxide with different weight percentages of polyaniline and temperature dependence of the samples characteristics have been studied. The activation energy of donor levels as well as the existence of hysteresis loop has been investigated. The comparison of experimental results shows that by increasing the polymer percentage in the varistor structure as long as the nonlinear behavior is conserved, the threshold voltage increases. This comparison also indicates that increasing the polymer content in the varistor structure causes the temperature dependence of threshold voltage to decrease. It is also concluded that, by the increase of polymer content in the varistor structure, the activation energy of donor levels and the hysteresis value are increased.

Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

2014 ◽  
Vol 778-780 ◽  
pp. 657-660 ◽  
Author(s):  
Ulrike Grossner ◽  
Francesco Moscatelli ◽  
Roberta Nipoti
Keyword(s):  
Activation Energy ◽  
Ideality Factor ◽  
Reverse Current ◽  
Activation Energies ◽  
Forward Current ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
The One ◽  
Post Implantation

Two families of Al+implanted vertical p+in diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z1/2defect for the one case and another one with an activation energy of 0.25eV.

Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Power Law ◽  
Current Density ◽  
Crystalline Silicon ◽  
Exponential Law ◽  
Current Voltage ◽  
Device Applications ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

SCANNING TUNNELING SPECTROSCOPY ON THE GdSr2RuCu2O8 COMPOUND

2003 ◽  
Vol 17 (04n06) ◽  
pp. 608-613 ◽  
Author(s):  
F. BOBBA ◽  
F. GIUBILEO ◽  
M. GOMBOS ◽  
C. NOCE ◽  
A. VECCHIONE ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Conductance ◽  
Zero Bias ◽  
Voltage Range ◽  
Current Voltage ◽  
Spectroscopic Information ◽  
Current Voltage Characteristics

Topographic and spectroscopic information on GdSr2RuCu2O8 sintered pellets have been obtained by a home built low temperature Scanning Tunneling Microscope (STM) operating at 4.2 K. The topographic image of the surface showed non homogeneous samples with grains of typical size of about 100 nm. In many locations studied, the Tunneling Spectroscopy reveals the presence of charging effects in the current-voltage characteristics over a voltage range up to 100 mV. Two types of charging effects are clearly distinguished: one corresponds to the reduction of the tunneling conductance around zero bias and is attributed to the Coulomb blockade, and another onw, a stepwise increasing of the current as a function of the bias voltage is identified as Coulomb staircase regime. Besides these spurious charging effects, the current-voltage characteristics often show a pronounced non-linearity around 4.0 mV. This non-linearity, disappearing above the critical temperature of the materials, is connected to the superconducting gap in the GdSr 2 RuCu 2 O 8.

scholarly journals The Effect of Grain Boundaries on Schottky Diode Parameters

2004 ◽  
Vol 1 (2) ◽  
pp. 258-263
Author(s):  
Baghdad Science Journal
Keyword(s):  
Activation Energy ◽  
Grain Boundaries ◽  
Schottky Diode ◽  
Optical Band Gap ◽  
Unit Area ◽  
X Ray ◽  
Current Voltage ◽  
Microscopic Studies ◽  
Current Voltage Characteristics ◽  
P Type

The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate that the type of angles between boundaries has a significant effect on diodes parameters while the boundary lengths per unit area has less effect. The mechanism of Al-interaction with grain boundaries and their intersecting points at different temperature were also studies. The X-ray fluorescence spectrometry has been used for detection of diffused A1%.

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