scholarly journals Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 2932
Author(s):  
Stergios Tsigaridas ◽  
Silvia Zanettini ◽  
Manuele Bettelli ◽  
Nicola Sarzi Amadè ◽  
Davide Calestani ◽  
...  
Keyword(s):  
Direct Detection ◽  
X Rays ◽  
Single Chip ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Fine Pitch ◽  
Pixel Sensors ◽  
Fabrication Procedure ◽  
Vertical Bridgman ◽  
Stable Performance

Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 m and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below 106 photons mm−2s−1.

Active Pixel Sensors for direct detection of soft X-rays

2011 ◽  
Vol 6 (12) ◽  
pp. C12058-C12058
Author(s):  
A Blue ◽  
R Bates ◽  
A Clark ◽  
S S Dhesi ◽  
D Maneuski ◽  
...  
Keyword(s):  
Direct Detection ◽  
X Rays ◽  
Active Pixel Sensors ◽  
Active Pixel ◽  
Pixel Sensors

Silicon Carbide APD with Improved Detection Sensitivity and Stability

2010 ◽  
Vol 645-648 ◽  
pp. 1089-1092 ◽  
Author(s):  
Mietek Bakowski ◽  
Adolf Schöner ◽  
Ingemar Petermann ◽  
Susan Savage
Keyword(s):  
Silicon Carbide ◽  
Breakdown Point ◽  
Avalanche Photodiode ◽  
Detection Sensitivity ◽  
Avalanche Multiplication ◽  
Absorption Region ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Stable Performance ◽  
Full Depletion

This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide material. The design includes a field-stopping layer with limited extension, and junction termination, in order to achieve avalanche multiplication only in the central region of the device. Also, sensitivity is increased by the achievement of a rectangular field distribution, and full depletion of the absorption region by the onset of avalanche multiplication. Evaluation of devices produced with this design show that a low leakage current and a sharp and stable avalanche breakdown point around 120V is achieved. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias, until a factor of 8 increase is achieved at the breakdown voltage.

Laser-Induced Doping of CdTe Crystals in Different Environments

2011 ◽  
Vol 222 ◽  
pp. 32-35 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Sergiy N. Levytskyi ◽  
Oleksandr I. Vlasenko ◽  
Toru Aoki
Keyword(s):  
Solid Phase ◽  
Laser Action ◽  
Surface Region ◽  
Laser Pulses ◽  
High Energy ◽  
Nanosecond Laser ◽  
High Concentration ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Fabrication Procedure

Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

2000 ◽  
Vol 622 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Changhe Huang ◽  
James N. Hilfiker
Keyword(s):  
Plasma Source ◽  
Film Structure ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Aln Film ◽  
Capacitance Voltage ◽  
Device Applications ◽  
Current Densities ◽  
Mis Structures

ABSTRACTAlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current

Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics

2001 ◽  
Vol 670 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Peter Fejes ◽  
Rich Gregory ◽  
Shifeng Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal Oxides ◽  
Gate Dielectrics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Compositional Properties ◽  
Sharp Interfaces ◽  
Selection Of

ABSTRACTRapid shrinking in device dimensions calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This paper will report recent results on structural and compositional properties of thin film SrTiO3 and transition metal oxides (ZrO2and HfO2).

Sign in / Sign up

Export Citation Format

Share Document