CHARACTERISTIC ANALYSIS ON GaN NANOCRYSTALLINE POWDER PREPARED BY SOL–GEL METHOD
Gallium nitride ( GaN ) nanocrystalline powder has been prepared by sol–gel method. The GaN powder has been confirmed as single-crystalline GaN with wurtzite structure by X-ray diffraction (XRD) and selected-area electron diffraction (SAED), and the diameter of the grains of GaN powder changes from 30 to 100 nm under transmission electron microscopy (TEM). Having been excited by 240 nm light at room temperature, GaN powder has a strong luminescence peak located at 395 nm and a weak luminescence peak located at 295 nm, attributed to GaN band-edge emission and blue-shift of the band-gap emission. Moreover, X-ray photoelectron spectroscopy (XPS) confirms the formation of the bond between Ga and N , and Raman scattering spectrum confirms A1 (TO) and E1 (TO) vibrational modes of GaN .