STRUCTURAL AND OPTICAL CHARACTERIZATION OF ITO/PS HETEROJUNCTION

2008 ◽  
Vol 15 (03) ◽  
pp. 301-306
Author(s):  
B. NATARAJAN ◽  
N. JEYAKUMARAN ◽  
S. RAMAMURTHY ◽  
V. VASU
Keyword(s):  
Indium Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Transparent Conducting ◽  
P Type ◽  
Luminescent Behavior

Transparent conducting indium tin oxide (ITO) films are deposited on Porous Silicon (PS) substrates by spray pyrolysis technique. In this process, the films are formed over the surface and also incorporated into the pores of PS and thereby making a protecting layer as well as a contacting terminal. Thus, the ITO/PS/ Si heterojunction light-emitting devices are fabricated. The growth of ITO on PS is thoroughly investigated by SEM and X-ray diffraction techniques. The features of growth on other substrates like single-crystal p-type (100) silicon and glass are also taken into consideration. The influence on the PS interface is correlated with the electrical and luminescent behavior of the resulting heterojunction diode structure.

Structural Studies Of Epitaxial CdF2 Layers on Si(111)

1996 ◽  
Vol 441 ◽  
Author(s):  
A. Yu. Khilko ◽  
R. N. Kyutt ◽  
G. N. Mosina ◽  
N. S. Sokolov ◽  
Yu. V. Shusterman ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Optimal Growth ◽  
Misfit Strain ◽  
X Ray Diffraction ◽  
Optimal Growth Temperature ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Transmission Electron

AbstractEpitaxial CdF2 layers, which may be used in light-emitting devices integrated with silicon, were grown by Molecular Beam Epitaxy (MBE). Characterization of the layers by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that optimal growth temperature lies in the range 60–80°C. The sticking coefficient of CdF2 molecules was found to decrease at temperatures above 100°C. Different modes of misfit strain relaxation were observed above and below that temperature.

Optical Characterization of Zinc Selenide Compound Prepared through Hydrothermal Method

2016 ◽  
Vol 846 ◽  
pp. 237-244
Author(s):  
Fakhrurrazi Ashari ◽  
Josephine Liew Ying Chyi ◽  
Zainal Abdib Talib ◽  
W. Wahmood Wan Yunus ◽  
Leong Yong Jian ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Hydrothermal Reaction ◽  
Electronic Devices ◽  
Band Gap Energy ◽  
Photovoltaic Devices ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices

ZnSe which show a potential application in electronic devices such as photovoltaic devices, light emitting devices and photodetector have been synthesized through a hydrothermal method using ZnCl2 and Se powder as the source. In a typical synthesis, Zn2+ and Se2- ion have been prepared separately and charged into a Teflon-lined stainless steel autoclave. The hydrothermal reaction was conducted at 180 °C for 32 hours. Structural properties of ZnSe are studied by X-ray diffraction (XRD) while the optical properties of ZnSe compound are characterized through ultraviolet–visible spectroscopy (UV-Vis). From the XRD result, pure ZnSe with main XRD peak at 2θ = 27.29°, 45.30°, 53.62°, 65.88°, 72.68° has been observed. The result have been supported by the optical results where absoprtion peak at 460 nm with optical band gap energy (Eg) at 2.5 eV.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Impact of various reactant concentrations on the morphology and photoluminescence property of synthetic ZnO nanobelts

2017 ◽  
Vol 31 (35) ◽  
pp. 1750337
Author(s):  
Guoxuan Qin ◽  
Yanan Wang ◽  
Shentong Mo ◽  
Xing Fu ◽  
Hui Wang ◽  
...  
Keyword(s):  
Photoluminescence Property ◽  
Xrd Analysis ◽  
Maximum Temperature ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Uv Emission ◽  
Zno Nanomaterials ◽  
Fluorescence Spectrometer

In this paper, ZnO nanobelts have been partially high-quality synthesized employing diverse reactant mass ratios between zinc acetate [Zn(AC)2] and polyvinyl alcohol (PVA) without any catalyst. The maximum temperature required for the whole reaction process is no more than 650[Formula: see text]C. The morphologies of ZnO nanomaterials fabricated from distinct reactant concentrations have been systematically investigated by means of field-emission scanning electron microscopy (FESEM). X-ray diffraction (XRD) analysis identifies that ZnO nanobelts exhibit a typical wurtzite structure. Through fluorescence spectrometer, the photoluminescence (PL) spectra generated by ZnO nanomaterials corresponding to different reactant concentrations have disparate peak intensities and luminescence wavelengths. This phenomenon indicates that novel-synthesized ZnO nanomaterial shows great potential in changing the optical properties of light-emitting devices. In addition, synthetic ZnO nanobelts exhibit excellent UV emission capability.

Delafossite-CuAlO2 Thin Films Prepared by Thermal Annealing

2011 ◽  
Vol 13 ◽  
pp. 81-86 ◽  
Author(s):  
Hong Ying Chen ◽  
Ming Wei Tsai
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Long Time ◽  
Hot Probe ◽  
Diffraction Patterns ◽  
P Type ◽  
Deposited Films ◽  
Partial Oxygen

Transparent conducting oxides (TCOs) are well known and have been widely used for a long time in optoelectronics industries. The most popular TCOs have n-type characteristics. However p-type material is not well established and examined. The delafossite-CuAlO2 is one of the p-type TCOs. In this paper, amorphous Cu-Al-O films were deposited onto (100) p-type silicon substrate by magnetron sputtering. After that, the films were annealed at 800°C for 2 h in different partial oxygen levels ranging from 5*10-5 to 1 atm with N2, air, and O2. X-ray diffraction patterns showed that as-deposited films were amorphous. In addition, delafossite-CuAlO2 (R m and P63/mmc phase) appeared at 800°C in N2, but monoclinic-CuO and spinel-CuAl2O4 phases existed in air and O2. The formation of delafossite-CuAlO2 phase can be explained with thermodynamics. The optoelectronic properties of delafossite-CuAlO2 films were also measured. The direct optical bandgap was around at 3.3 eV, which is comparable with literature data. The electrical conductivity was obtained to be 6.8*10-3 S/cm. The hot-probe method employed to measure the electrical property of the films, which indicates that delafossite-CuAlO2 films have p-type characteristics.

scholarly journals Influence of Nd and Ce doping on the structural, optical and electrical properties of V2O5 thin films

2019 ◽  
Vol 14 (30) ◽  
pp. 73-82
Author(s):  
I. K. Jassim
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Transition Band ◽  
X Ray ◽  
Chemical Spray ◽  
V2o5 Thin Films ◽  
P Type ◽  
Nano Grains

Nano-structural of vanadium pentoxide (V2O5) thin films weredeposited by chemical spray pyrolysis technique (CSPT). Nd and Cedoped vanadium oxide films were prepared, adding Neodymiumchloride (NdCl3) and ceric sulfate (Ce(SO4)2) of 3% in separatesolution. These precursor solutions were used to deposit un-dopedV2O5 and doped with Nd and Ce films on the p-type Si (111) andglass substrate at 250°C. The structural, optical and electricalproperties were investigated. The X-ray diffraction study revealed apolycrystalline nature of the orthorhombic structure with thepreferred orientation of (010) with nano-grains. Atomic forcemicroscopy (AFM) was used to characterize the morphology of thefilms. Un-doped V2O5 and doped with 3% concentration of Nd andCe films have direct allowed transition band gap. The mechanisms ofdc-conductivity of un-doped V2O5 and doped with Nd and Ce filmsat the range 303 K to 473 K have been discussed.

Synthesis and Characterization of Delafossite CuLaO2 for Thermoelectric Application

2007 ◽  
Vol 534-536 ◽  
pp. 1081-1084 ◽  
Author(s):  
Yuhsuke Takahashi ◽  
Hiroaki Matsushita ◽  
Akinori Katsui
Keyword(s):  
Seebeck Coefficient ◽  
Single Phase ◽  
Metallic Copper ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Mixed Powder ◽  
X Ray ◽  
Type Semiconductor ◽  
P Type

The preparation of single-phase CuLaO2 with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase CuLaO2 was obtained by using La(OH)3 as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of La(OH)3:Cu2O =1:1.425 in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that CuLaO2 thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately 70 /V/K.

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