AMORPHOUS PbSe THIN FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT pH OF 5–8

2019 ◽  
Vol 27 (04) ◽  
pp. 1950128 ◽  
Author(s):  
İ. A. KARİPER
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Lead Selenide ◽  
Lead Sulfate ◽  
Sem Analysis ◽  
Optical Bandgap ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Sodium Selenosulfate ◽  
Amorphous Glass

Lead selenide (PbSe) thin films have been deposited on amorphous glass substrates at room temperature, using the simple chemical bath deposition technique. Lead sulfate and sodium selenosulfate were used as the source materials to obtain lead selenide films. Transmittance, absorption, optical bandgap and refractive index of the films were investigated via the UV–vis spectrum. Amorphous form was observed in the XRD pattern. The structural and optical properties of PbSe thin films produced at different pH were analyzed. SEM analysis was performed for analyzing the surface of the films. Some properties of the films were observed to vary with pH and these properties were investigated according to the change of pH, for pH values of 5–8. Optical bandgap varied with pH between 1.46[Formula: see text]eV and 1.75[Formula: see text]eV. Film thickness also changed with pH from 465[Formula: see text]nm to 1765[Formula: see text]nm.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

A NOVEL METHOD FOR PRODUCING NANOSTRUCTURED CdSe THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950175 ◽  
Author(s):  
İSHAK AFŞIN KARİPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Sem Analysis ◽  
Optical Bandgap ◽  
Cdse Thin Film ◽  
Glass Substrates ◽  
Commercial Glass ◽  
Ph Level

In this study, we produced Cadmium selenide (CdSe) crystalline thin film on commercial glass substrates via chemical bath deposition. Transmittance, absorbance, refractive index and optical bandgap of thin films were examined by UV/vis spectrum. XRD revealed a hexagonal form. The pH level of the baths in which CdSe thin films were deposited varied and optical and structural properties of the resulting thin films were analyzed. SEM analysis was used for surface analysis. Some features of the films were supposed to change with pH and these properties were investigated by testing different pH levels, which were 8, 9, 10 and 11. The variation of the optical bandgap changed between 1.60 and 1.75[Formula: see text]eV, according to the pH of deposition bath. Film thickness varied from 60[Formula: see text]nm to 93[Formula: see text]nm, with the variation of deposition bath’s pH. Moreover, it has been found that refractive index values were also changed with film thickness; these were calculated as 2.28, 2.19, 2.22 and 2.36 for 93.27, 60.97, 61.09 and 60.18[Formula: see text]nm, respectively. Dielectric constant also varied with refractive index, taking values 0.85, 0.75, 0.78, 0.93 for refractive indexes 2.28, 2.19, 2.22 and 2.36, respectively.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

2014 ◽  
Vol 320 ◽  
pp. 309-314 ◽  
Author(s):  
Biswajit Ghosh ◽  
Kamlesh Kumar ◽  
Balwant Kr Singh ◽  
Pushan Banerjee ◽  
Subrata Das
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Coated Glass ◽  
Glass Substrates ◽  
Cds Thin Films

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

2013 ◽  
Vol 665 ◽  
pp. 159-167
Author(s):  
M.S. Jani ◽  
H.S. Patel ◽  
J.R. Rathod ◽  
K.D. Patel ◽  
V.M. Pathak ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
Structural And Optical Properties ◽  
Structural Investigations ◽  
Glass Substrates ◽  
Optical Bandgap Energy ◽  
Different Thickness

In this paper structural and optical properties of CdSe thin films with different thickness deposited by thermal evaporation under vacuum onto glass substrates are presented. The structural investigations performed by means of XRD technique showed that the films have a polycrystalline and hexagonal (würtzite) structure. The values of some important parameters of the studied films (absorption coefficient and optical bandgap energy) are determined from transmission spectra. The values of the optical bandgap energy (Eg) calculated from the absorption spectra, ranged between 1.67 - 1.74 eV.

New Approaches to Chemical Bath Deposition of Chalcogenides

1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O’brien ◽  
Markus R. Heinrich ◽  
David J. Otway ◽  
Odile Robbe ◽  
Alexander Bayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Chemical Bath Deposition ◽  
Glass Substrates ◽  
Heated Substrate ◽  
New Approaches ◽  
Vis Spectroscopy ◽  
Optoelectronic Applications ◽  
Cds Films

AbstractWe have been studying new approaches to conventional Chemical Bath Deposition (CBD) of chalcogenide containing materials, using continuous circulation and replenishment of CBD solution over a heated substrate. Crystalline thin films produced by this method offer potential for use in solar cell devices or other optoelectronic applications. Films of CdS, ZnS and the ternary material CdxZn1−xS have been deposited on TO-glass substrates. In this paper we demonstrate our approach for the deposition of CdS films. These have been characterized by XPS, SEM, XRD and UV/vis spectroscopy and shown to be good quality. The films have been used to fabricate Au/CdTe/CdS/TO-glass solar cells of efficiency 10.1% under AMl.5 illumination.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

Influence of Ti-Doping on the Thermoelectric Properties of ZnO:Al Thin Films

2013 ◽  
Vol 734-737 ◽  
pp. 2391-2394
Author(s):  
Qing Yun Lin ◽  
Ping Fan ◽  
Jing Ting Luo ◽  
Zhuang Hao Zheng ◽  
Ying Zhen Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermoelectric Properties ◽  
Hexagonal Wurtzite Structure ◽  
Oxide Thin Film ◽  
Xrd Pattern ◽  
Absolute Value ◽  
Glass Substrates ◽  
Maximum Conductivity ◽  
Ti Doping

Ti doped aluminum zinc oxide thin film was prepared by DC reaction magnetron sputtering method on the transparent glass substrates. The structure and thermoelectric performance of the deposited (TAZO) thin films are studied by various methods. XRD pattern shows that the TAZO thin film exhibits hexagonal wurtzite structure. After Ti-doping, the thermoelectric properties of TAZO thin film significantly improved at room temperature. The TAZO thin film has the maximum conductivity of 8.33×104 S/m and the Seebeck coefficient absolute value of 34 μV/K, which is respectively larger than that of the corresponding values.

Microstructure and thermoelectric transport properties of BiCuSeO thin films on amorphous glass substrates

2018 ◽  
Vol 47 (32) ◽  
pp. 11091-11096
Author(s):  
Dachao Yuan ◽  
Shuang Guo ◽  
Shuaihang Hou ◽  
Yuejin Ma ◽  
Jianjun Hao ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Thermoelectric Transport ◽  
Glass Substrates ◽  
Thermoelectric Transport Properties ◽  
Amorphous Glass

Effect of structural defects on the low temperature thermoelectric transport properties of c-axis-textured BiCuSeO thin films on amorphous glass substrates.

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

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