Influence of Ti-Doping on the Thermoelectric Properties of ZnO:Al Thin Films
2013 ◽
Vol 734-737
◽
pp. 2391-2394
Keyword(s):
Ti doped aluminum zinc oxide thin film was prepared by DC reaction magnetron sputtering method on the transparent glass substrates. The structure and thermoelectric performance of the deposited (TAZO) thin films are studied by various methods. XRD pattern shows that the TAZO thin film exhibits hexagonal wurtzite structure. After Ti-doping, the thermoelectric properties of TAZO thin film significantly improved at room temperature. The TAZO thin film has the maximum conductivity of 8.33×104 S/m and the Seebeck coefficient absolute value of 34 μV/K, which is respectively larger than that of the corresponding values.