Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

2019 ◽  
Vol 31 (4) ◽  
pp. 901-906
Author(s):  
K. Radhi Devi ◽  
G. Selvan ◽  
M. Karunakaran ◽  
K. Kasirajan

Pure and metals (Mn & Mg) doped zinc oxide (ZnO, ZnO/Mn and ZnO/Mg) thin films have been successfully grown onto a glass substrates by low cost SILAR method. The structural, morphological, compositional, functional group and optical properties of the prepared films were studied using X-ray diffraction, scanning electron microscope and EDAX, FTIR and UV-visible spectrophotometer, respectively. The structure of the films were found to be hexagonal with polycrystalline in nature with preferential orientation along (002) plane. From Fourier Transform Infrared spectroscopy, the presence of functional groups and its corresponding molecular vibrations were assessed. In UV-visible spectroscopy, the obtained direct optical band gap values 3.46, 3.56 and 3.7 eV for pure, Mn and Mg doped ZnO thin films, respectively. Morphological results showed that the remarkable changes in morphology due to the effect of metal doping. EDAX studies showed that the presence of zinc and oxygen content and also a doping metal ions.


2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)


2018 ◽  
Vol 18 ◽  
pp. 113-117 ◽  
Author(s):  
Abdelkader Hafdallah ◽  
Aimane Guedri ◽  
Mohamed Salah Aida ◽  
Nadhir Attaf

In the present work we prepared conducting and transparent thin films ZnO with different solution concentrations by pyrolysis spray technique on glass substrates. These films are obtained starting from solution of zinc acetate dehydrate [Zn(CH3COO)2.2H2O] dissolved in methanol, at substrate temperature fixed T =350°C with a concentration of solution vary from 0.05-0.2 M. Our interest is on the investigation of solution concentration on the structural and optical properties of these films. The X-ray diffraction (XRD) results showed that the synthesized ZnO films are polycrystalline with preferred orientation along the (002) plane. The optical films characterization was carried out by the UV-Visible transmission. The optical gap and films disorder were deduced from the absorption spectra, The values of optical band gaps vary between 3.24 and 3.43 eV.


2014 ◽  
Vol 28 (26) ◽  
pp. 1450210 ◽  
Author(s):  
Zhong Hua ◽  
Xiangcheng Meng ◽  
Yaming Sun ◽  
Wanqiu Yu ◽  
Dong Long

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.


2020 ◽  
pp. 333-340
Author(s):  
Donia Yas Khudair ◽  
Ramiz Ahmed Al Ansari

In this work, SnO2 and (SnO2)1-x(ZnO)x composite thin films with different ZnO atomic ratios (x=0, 5, 10, 15 and 20%) were prepared by pulsed laser deposition technique on clean glass substrates at room temperature without any treatment. The deposited thin films were characterized by x-ray diffraction atomic force microscope  and UV-visible spectrophotometer to study the effect of the ZnO atomic ratio on their structural, morphological and optical properties. It was found that the crystallinety and the crystalline size vary according to ZnO atomic ratio. The surface appeared as longitudinal structures which was convert to spherical shapes with increasing ZnO atomic ratio. The optical transmission and energy gap increased with increasing ZnO atomic ratio. 


2013 ◽  
Vol 20 (02) ◽  
pp. 1350014 ◽  
Author(s):  
F. RAHMAN ◽  
J. PODDER ◽  
M. ICHIMURA

Indium sulfide (In2S3) thin films were deposited onto the glass substrates by a low cost simple spray pyrolysis technique at 300°C temperature. Aqueous solution of indium chloride and thiourea were used to deposit the binary In-S film. The deposited thin films were annealed at 400° and 500°C temperatures and characterized structurally, optically and electrically using EDX, X-ray diffraction, UV-visible spectroscopy and four probe van der Pauw methods. The optical constants such as refractive index and extinction coefficient are calculated from absorbance and transmittance data from 300 to 1100 nm wavelength. The optical transmittance increased after annealing at 400° and 500°C. The band gap energy was reduced from 2.90 to 2.50 eV after annealing the as deposited films. The electrical conductivity as well as the activation energy was increased after annealing the samples.


2010 ◽  
Vol 139-141 ◽  
pp. 149-152 ◽  
Author(s):  
Huda Abdullah ◽  
Nor Habibi Saadah ◽  
Sahbudin Shaari ◽  
Andanastuti Muchtar

Zinc sulfide thin films were deposited on optical glass substrates by using chemical bath deposition (CBD) technique that contain solutions of thiourea, zinc acetate, ammonia and sodium citrate. The deposition time were varied from 18 hours to 39 hours. SEM, XRD, and UV-Vis-NIR were used to characterize the sample which shows that the films are thicker and the grains sizes are bigger as the deposition time increases. X-ray diffraction (XRD) pattern prove that ZnS thin films are in disordered since it does not revealing any peaks and the surface of ZnS thin films are amorphous. UV-Vis spectra showed that the deposited ZnS thin films have more than 100% transmittance in the visible region and direct band gap of deposited films are in range of 2.45 eV to 3.53 eV. Time increasing of deposition will slightly decrease the transmittance of the film.


2019 ◽  
Vol 397 ◽  
pp. 1-7
Author(s):  
Hassene Nezzari ◽  
Riad Saidi ◽  
Adel Taabouche ◽  
Meriem Messaoudi ◽  
Mohamed Salah Aida

In this work, ZnO thin films grown on heated glass substrates in a temperature range of 300 to 500 °C with a 50°C step. The prepared solution is composed of methanol and zinc acetate Zn(CH3COO)2.2H2O. ZnO thin films are deposited by pyrolysis spray technique, our work focuses on the study of the substrate temperature influence on the structural and optical properties of these layers. Therefore, The X-ray diffraction, showed a Wurtzit hexagonal structure of elaborated films, with (002) as a preferred orientation, and a grain size of 64 to 74 nm. The optical transmission spectroscopy UV-Visible, illustrated an increase of optical band gap from 3.19 to 3.25 eV, proportionally with the substrate temperature.


2022 ◽  
Vol 12 (1) ◽  
pp. 81
Author(s):  
Amal Bouich ◽  
Julia Marí-Guaita ◽  
Asmaa Bouich ◽  
Inmaculada Guaita Pradas ◽  
Bernabé Marí

Herein, we examine the impact of cations on the structural, morphological, optical properties and degradation of lead perovskite APbI3 (where A = MA, FA, Cs). Its structure, surface morphology and optical properties have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Visible spectrometer. The structure of perovskite thin films was found to be in the direction of (110) plane. It is seen from the XRD results that this kind of cation assumes a significant part in stabilising and improving the performance of APbI3 based solar cells. Here, the cesium lead iodide thin films show a smooth and homogenous surface and enormous grain size without pinhole perovskite film. An optical investigation uncovered that the band gap is in a range from 1.4 to 1.8 eV for the different cations. Additionally, in ~60% humidity under dark conditions for two weeks, the structural and optical properties of CsPbI3 films remained good. Furthermore, the efficiency of FTO/TIO2/CSPbI3/Spiro-Ometad/Au solar cells was calculated to be 21.48%.


2019 ◽  
Vol 286 ◽  
pp. 64-71 ◽  
Author(s):  
Raquel Ramírez-Amador ◽  
Gregorio Flores-Carrasco ◽  
Salvador Alcántara-Iniesta ◽  
Julio Rodríguez González ◽  
Ogilver García-Teniza ◽  
...  

This paper reports a study of Fluorine-doped Tin Oxide (FTO) thin films deposited by the Pneumatic Spray Pyrolysis (PSP) technique. The films were deposited on glass substrates at 450 °C with a ~125 nm thickness, using an F/Sn ratio of 0, 0.2, 0.35, 0.5, 0.65 and 0.85, respectively. The samples were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible Spectroscopy and Hall Effect techniques, respectively. XRD results revealed that the FTO thin films were polycrystalline with a tetragonal rutile-type structure and had preferential orientations along (110) planes. SEM studies showed that FTO thin film morphology was totally affected by an increased F/Sn ratio. The calculated grain mean sizes were 10-35 nm. Optical transmittance spectra of the films showed a high transparency of approximately 80-90 % in the visible region. The optical gap of FTO thin films was in a 3.70-4.07 eV range. Electrical and optical properties of these films were studied as a function of the F/Sn ratio. Therefore, the optimal FTO (F/Sn = 0.5) films revealed a maximum value of the figure of merit approximately 8.05 × 10-3 (Ω-1) at λ = 400 nm. The high-conducting and transparent-elaborating FTO thin films may have several promising applications due to its multifunctional properties.


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