A NOVEL METHOD FOR PRODUCING NANOSTRUCTURED CdSe THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950175 ◽  
Author(s):  
İSHAK AFŞIN KARİPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Sem Analysis ◽  
Optical Bandgap ◽  
Cdse Thin Film ◽  
Glass Substrates ◽  
Commercial Glass ◽  
Ph Level

In this study, we produced Cadmium selenide (CdSe) crystalline thin film on commercial glass substrates via chemical bath deposition. Transmittance, absorbance, refractive index and optical bandgap of thin films were examined by UV/vis spectrum. XRD revealed a hexagonal form. The pH level of the baths in which CdSe thin films were deposited varied and optical and structural properties of the resulting thin films were analyzed. SEM analysis was used for surface analysis. Some features of the films were supposed to change with pH and these properties were investigated by testing different pH levels, which were 8, 9, 10 and 11. The variation of the optical bandgap changed between 1.60 and 1.75[Formula: see text]eV, according to the pH of deposition bath. Film thickness varied from 60[Formula: see text]nm to 93[Formula: see text]nm, with the variation of deposition bath’s pH. Moreover, it has been found that refractive index values were also changed with film thickness; these were calculated as 2.28, 2.19, 2.22 and 2.36 for 93.27, 60.97, 61.09 and 60.18[Formula: see text]nm, respectively. Dielectric constant also varied with refractive index, taking values 0.85, 0.75, 0.78, 0.93 for refractive indexes 2.28, 2.19, 2.22 and 2.36, respectively.

Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power

2020 ◽  
Vol 12 (10) ◽  
pp. 1568-1571
Author(s):  
Seokwon Lee ◽  
Jung Hyun Kim ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Tungsten Carbide ◽  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Glass Substrates ◽  
Frequency Power ◽  
Scanning Electron ◽  
Sputtering System

In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Effects of Variations in Annealing Temperature and Annealing Time on the Spectral and Solid State Properties of Nickel Oxide (NiO) Thin Films

2013 ◽  
Vol 787 ◽  
pp. 262-268 ◽  
Author(s):  
J.C. Osuwa ◽  
G.I. Onyejiuwa
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Nickel Oxide ◽  
Annealing Time ◽  
Band Gap Energy ◽  
Glass Substrates ◽  
Grown Sample ◽  
Nio Thin Film ◽  
Spectral Absorbance

Chemical bath deposited nickel oxide (NiO) thin film samples were grown at room temperature of 30 °C on glass substrates. Samples k1, k2, and k3 were annealed for one hour at temperatures of 100 °C, 200 °C and 300 °C respectively, while as grown sample k4 served as a reference. A second set of samples k5, k7, and k8 were annealed at a constant temperature of 300 °C for time durations of 1H, 2H and 3H respectively, with as grown sample k6 as a reference. The spectral absorbance, transmittance and reflectance of all the thermally treated thin film samples were measured with a spectrophotmeter (D model Avantes Spec 2048 version 7.0) in the UV-VIS-NIR region of 300-900 nm wavelength. The results show distinctive variations in all the spectral properties for different combinations of annealing time and temperature, each starting at a threshold wavelength of 300 nm and ending with a distinctive minimum or maximum value. Deduced graphical values of the refractive index also show distinctive variations. For annealing time of 3 hours at a temperature of 300 °C, the results produced symmetric reflectance and symmetric refractive index with maximum values of 8% and 0.293 occurring at 500 nm wavelength and photon energy of 2.5 eV respectively. Direct transition band gap energy obtained for all the samples lie between 3.68-3.84 eV. The results reported in this paper clearly indicate that optimum combinations of production parameters of nickel oxide thin films can yield specific values of the properties for specific applications.

Structural, Optical and Electrical Properties of Multiple Layers Nano-Structured Zinc Oxide Thin Film

2015 ◽  
Vol 1109 ◽  
pp. 401-404
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
M.F. Malik ◽  
A. Ishak ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Visible Region ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Thin Film Thickness ◽  
Glass Substrates ◽  
Average Transmittance

The nanoStructured ZnO thin films were prepared by Spin coating technique on glass substrates at various layers. The structural and optical properties were characterized by field emission scanning electron microscopy (FESEM) and UV-Vis-NIR respectively. The surface morphology reveals that the nanostructured ZnO thin films become densely packed as the thickness increased. The average particles size of ZnO thin film estimated from FESEM images at different layers of 1, 3, 5, 7, 9 were 20nm, 28nm, 36nm, 39nm and 56nm, respectively. The surface roughness of thin films was increase as the thin film thickness increases. The results show all films are transparent in the visible region (400-800 nm) with average transmittance above 85 %. Meanwhile, the optical band gap was decrease as the film thickness increases. The conductivity of ZnO thin film slightly improved as the thickness increased as measured through two probes 1-V measurement system.

scholarly journals Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4681
Author(s):  
Dorian Minkov ◽  
Emilio Marquez ◽  
George Angelov ◽  
Gavril Gavrilov ◽  
Susana Ruano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
High Accuracy ◽  
Transmittance Spectrum ◽  
Semiconductor Film ◽  
Envelope Method ◽  
Average Film Thickness

Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T(λ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy of characterization, of the average film thickness d¯ and the thickness non-uniformity ∆d over the illuminated area, increases, employing a simple dual transformation utilizing the product T(λ)xs(λ), where Tsm(λ) is the smoothed spectrum of T(λ) and xs(λ) is the substrate absorbance. Secondly, an approach is proposed for selecting an interval of wavelengths, so that using envelope points only from this interval provides the most accurate characterization of d¯ and ∆d, as this approach is applicable no matter whether the substrate is transparent or non-transparent. Thirdly, the refractive index n(λ) and the extinction coefficient k(λ) are computed, employing curve fitting by polynomials of the optimized degree of 1/λ, instead of by previously used either polynomial of the optimized degree of λ or a two-term exponential of λ. An algorithm is developed, applying these three means, and implemented, to characterize a-Si and As98Te2 thin films. Record high accuracy within 0.1% is achieved in the computation of d¯ and n(λ) of these films.

AMORPHOUS PbSe THIN FILM PRODUCED BY CHEMICAL BATH DEPOSITION AT pH OF 5–8

2019 ◽  
Vol 27 (04) ◽  
pp. 1950128 ◽  
Author(s):  
İ. A. KARİPER
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Lead Selenide ◽  
Lead Sulfate ◽  
Sem Analysis ◽  
Optical Bandgap ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Sodium Selenosulfate ◽  
Amorphous Glass

Lead selenide (PbSe) thin films have been deposited on amorphous glass substrates at room temperature, using the simple chemical bath deposition technique. Lead sulfate and sodium selenosulfate were used as the source materials to obtain lead selenide films. Transmittance, absorption, optical bandgap and refractive index of the films were investigated via the UV–vis spectrum. Amorphous form was observed in the XRD pattern. The structural and optical properties of PbSe thin films produced at different pH were analyzed. SEM analysis was performed for analyzing the surface of the films. Some properties of the films were observed to vary with pH and these properties were investigated according to the change of pH, for pH values of 5–8. Optical bandgap varied with pH between 1.46[Formula: see text]eV and 1.75[Formula: see text]eV. Film thickness also changed with pH from 465[Formula: see text]nm to 1765[Formula: see text]nm.

Envelope Method Applied on the AZO Thin Films

2012 ◽  
Vol 268-270 ◽  
pp. 202-206
Author(s):  
Ying Xu ◽  
Peng Hua Ma ◽  
Mo Ning Liu
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Optical Constants ◽  
Light Transmittance ◽  
Incident Wavelength ◽  
Weak Absorption ◽  
Transmittance Spectra ◽  
Glass Substrates ◽  
Envelope Method

The AZO thin films had been prepared on glass substrates by APCVD process .The transmittance spectra of AZO thin films was measured with S-600 UV-Vis spectrophotometer . The visible light transmittance values of AZO thin films are about 85% and the thickness of the thin films well-distributed by the transmittance spectra of AZO films. Using the envelope method, the film thickness d is calculated about 964.43nm and the discrepancy is only 0.56% compared with the result of instrument measurements. The curve about the refractive index n with the incident wavelength is consistent with the reported literature results. The envelope method is suitable for the optical constants processing of some similar AZO films where exist weak absorption ranges (T≥0.4).

Characterization of Rapid Thermal and Micro-Wave Annealed Germanium Thin Films Grown by E-Beam Evaporation on Glass Substrates

2013 ◽  
Vol 663 ◽  
pp. 431-435
Author(s):  
Li Te Tsou ◽  
Sheng Hao Chen ◽  
Huai Yi Chen ◽  
Yao Jen Lee ◽  
Horng Show Koo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Film Thickness ◽  
Sheet Resistance ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Glass Substrates ◽  
Microwave Annealing

In this paper, we used the electron beam (e-beam) evaporation to deposit Ge thin film on glass, and used microwave annealing (MWA) system of 5.8 GHz frequency for thin film crystallization. Then, we compared the MWA experiment results of sample sheet resistance (Rs), crystallization strength and cross section with those using traditional rapid thermal annealing (RTA) equipment. We found that MWA can get poly-Ge thin film with (111), (220) and (311) crystallization directions and optimal Rs at a temperature of about 450 ° C without affecting the film thickness. By comparison, RTA equipment can only reduce the sample Rs at least temperature of 550oC.

scholarly journals Low-Temperature Synthesis, Structural and Optical Characterizations of The Novel Bisbs3 Thin Films as Anew Absorber Layer for Solar Cells

2021 ◽  
Author(s):  
I M El radaf ◽  
H.Y.S Al-Zahrani
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Energy Gap ◽  
Structural Parameters ◽  
Research Work ◽  
Optical Parameters ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
P Type

Abstract In this research work, thin films of BiSbS3 have been successfully synthesized onto well cleaned soda-lima glass substrates via the chemical bath deposition procedure at different thicknesses (t= 159, 243, 296 and 362 nm). The X-ray diffraction patterns of the chemically deposited BiSbS3 films depicted that the synthesized films exposed polycrystalline nature and have an orthorhombic structure. The structural parameters of the chemically deposited BiSbS3 films were evaluated by Debye-Scherer’s formulas. The surface morphologies of the BiSbS3 films were fixed via the field-emission-scanning-electron microscope. The analyses of the linear optical parameters of the chemically deposited BiSbS3 thin films refer to improving the values of the absorption coefficient, α and the linear refractive index, n via the increase in the film thickness. In addition, there is an observed reduction in the energy gap, Eg values from 1.38 to 1.22 eV occurred by raising the film thickness. Furthermore, there is an enhancement in the nonlinear optical constants and the optoelectrical parameters occurred by raising the film thickness where the nonlinear refractive index, \({n}_{2},\)the optical free carrier concentration, \({N}_{opt}\) and the optical conductivity σopt were enlarged with increasing the values of film thickness. Moreover, the hot probe procedure was applied to the BiSbS3 thin films and this method demonstrated that the chemically deposited BiSbS3 films are p-type semiconductors.

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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