Atomically Flat Surface: The Key Issue for Solution-Derived Epitaxial Multilayers

2008 ◽  
Vol 1 ◽  
pp. 121701 ◽  
Author(s):  
Mariona Coll ◽  
Alberto Pomar ◽  
Teresa Puig ◽  
Xavier Obradors
Keyword(s):  
Flat Surface ◽  
Epitaxial Multilayers ◽  
Atomically Flat

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Surface Etching of 6H-SiC(0001) by Annealing in Vacuum for Obtaining an Atomically Flat Surface

2002 ◽  
Vol 41 (Part 2, No. 11A) ◽  
pp. L1218-L1220 ◽  
Author(s):  
Masashi Harada ◽  
Takayuki Nagano ◽  
Noriyoshi Shibata
Keyword(s):  
Flat Surface ◽  
Surface Etching ◽  
Atomically Flat

Planarization of Zinc Oxide Surface and Evaluation of Processing Damage

2011 ◽  
Vol 485 ◽  
pp. 215-218 ◽  
Author(s):  
Hiroki Miyazaki ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Takamasa Ishigaki ◽  
Naoki Ohashi
Keyword(s):  
Zinc Oxide ◽  
Flat Surface ◽  
Mechanical Polishing ◽  
Crystalline Quality ◽  
Polished Surface ◽  
Oxide Surface ◽  
High Crystalline Quality ◽  
Atomically Flat

The processes for polishing a ZnO surface were investigated with the aim of establishing a process for obtaining an atomically flat surface with high crystalline quality. The defects in a layer undergoing mechanical polishing were monitored through photoluminescence measurements, and the purity of the polished surface was characterized by SIMS. An atomicallyfishing process.

scholarly journals DNA origami deposition on native and passivated molybdenum disulfide substrates

2014 ◽  
Vol 5 ◽  
pp. 501-506 ◽  
Author(s):  
Xiaoning Zhang ◽  
Masudur Rahman ◽  
David Neff ◽  
Michael Louis Norton
Keyword(s):  
Molybdenum Disulfide ◽  
Electronic Structures ◽  
Structural Integrity ◽  
Flat Surface ◽  
Surface Modifications ◽  
Dna Origami ◽  
Protective Agent ◽  
Adsorption Layers ◽  
Atomically Flat ◽  
Hybrid Dna

Maintaining the structural fidelity of DNA origami structures on substrates is a prerequisite for the successful fabrication of hybrid DNA origami/semiconductor-based biomedical sensor devices. Molybdenum disulfide (MoS2) is an ideal substrate for such future sensors due to its exceptional electrical, mechanical and structural properties. In this work, we performed the first investigations into the interaction of DNA origami with the MoS2 surface. In contrast to the structure-preserving interaction of DNA origami with mica, another atomically flat surface, it was observed that DNA origami structures rapidly lose their structural integrity upon interaction with MoS2. In a further series of studies, pyrene and 1-pyrenemethylamine, were evaluated as surface modifications which might mitigate this effect. While both species were found to form adsorption layers on MoS2 via physisorption, 1-pyrenemethylamine serves as a better protective agent and preserves the structures for significantly longer times. These findings will be beneficial for the fabrication of future DNA origami/MoS2 hybrid electronic structures.

Structure of NiO and Li-doped NiO single crystalline thin layers with atomically flat surface

2005 ◽  
Vol 486 (1-2) ◽  
pp. 214-217 ◽  
Author(s):  
U.S. Joshi ◽  
R. Takahashi ◽  
Y. Matsumoto ◽  
H. Koinuma
Keyword(s):  
Flat Surface ◽  
Thin Layers ◽  
Single Crystalline ◽  
Atomically Flat

Surface morphology of as grown and annealed bulk GaN crystals

1996 ◽  
Vol 1 ◽  
Author(s):  
G. Nowak ◽  
S. Krukowski ◽  
I. Grzegory ◽  
S. Porowski ◽  
Jacek M. Baranowski ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Flat Surface ◽  
Hydrogen Atmosphere ◽  
The Other ◽  
Crystal Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Flat Side ◽  
Bulk Gan ◽  
Atomically Flat

GaN single crystals have been grown from Ga solution. The crystals grow in the form of platelets with their basal plane perpendicular to the c-axis. The two opposite crystal surfaces are not equivalent since one is N- and the other Ga-terminated. Atomic force microscopy has been applied to study surface morphology on both surfaces. It was found that one side is atomically flat. The other side consists of pyramid-like structures about 25 nm in size.The influence of annealing in an NH3+H2 atmosphere in the temperature range from 600°C to 900°C was investigated. Depending on crystal face the results were drastically different. It was found that on the rough side, annealing yields an atomically flat surface with terraces of monolayer height. The size of the terraces depends on the temperature of the annealing. On the originally flat side the surface becomes rougher after annealing. The transformation of surface morphology begins at temperatures below 700°C. Preliminary results of annealing in a hydrogen atmosphere are also reported. These findings are crucial for the understanding and development of GaN homoepitaxy.

Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

2013 ◽  
Vol 534 ◽  
pp. 67-69 ◽  
Author(s):  
Amita Mishra ◽  
Anirban Dutta ◽  
Sayanti Samaddar ◽  
Anjan K. Gupta
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Chemical Deposition ◽  
Single Crystalline ◽  
Wet Chemical ◽  
Atomically Flat

CHANGES OF RIPPLE MORPHOLOGY OF CLEAVED Si SURFACE BY LOW-ENERGY Ar+ ION BEAM SPUTTERING

2011 ◽  
Vol 10 (03) ◽  
pp. 495-499 ◽  
Author(s):  
S. A. PAHLOVY ◽  
S. F. MAHMUD ◽  
K. YANAGIMOTO ◽  
I. MIYAMOTO
Keyword(s):  
Wave Vector ◽  
Flat Surface ◽  
Incidence Angle ◽  
Ion Beam ◽  
Wave Length ◽  
Ion Beam Sputtering ◽  
Smooth Plane ◽  
Beam Sputtering ◽  
Atomically Flat ◽  
Si Wafer

We have investigated the changes of ripple morphology of an atomically flat cleaved Si surface due to Ar+ ion bombardment. The cleaved atomically flat and smooth plane of Si wafer was obtained by cutting vertically against the orientation flat of a Si (100) wafer. Then, the cleaved surface was bombarded by 1 keV Ar+ ion beam at ion incidence angle of 0°, 50°, 60°, 70°, and 80°. The ripples structure were depends on ion dose and angle formed on atomically flat surface at ion incidence angle of 50°, 60°, 70°, and 80°. Ripples were unclear and small at ion doses of 1.0 × 1018 ions/cm2 but pronounced at ion dose of 8.0 × 1018 ions/cm2. The wave lengths of ripples were measured and the maximum wave length is 425 nm at ion incidence angle of 70° and ion dose of 8.0 × 1018 ions/cm2. Results show that the wave length of ripple depends on ion doses and angle of ion incidence. It was also observed that the wave vector of ripple changes with changing the angle of ion incidence. This research is concluded by discussing the wave vector changing mechanism with the help of BH model.

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