Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams

1984 ◽  
Vol 23 (Part 2, No. 1) ◽  
pp. L293-L295 ◽  
Author(s):  
Kenji Gamo ◽  
Nobuyuki Takakura ◽  
Norihiko Samoto ◽  
Ryuichi Shimizu ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Organic Films ◽  
Focused Ion Beams ◽  
Ion Beam Assisted Deposition ◽  
Metal Organic

Characteristics of Selective Deposition of Metal Organic Films Using Focused Ion Beams

1984 ◽  
Author(s):  
Kenji Gamo ◽  
Nobuyuki Takakura ◽  
Daisuke Takehara ◽  
Susumu Namba
Keyword(s):  
Ion Beams ◽  
Organic Films ◽  
Focused Ion Beams ◽  
Selective Deposition ◽  
Metal Organic

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

FIB Precise Prototyping and Simulation

2006 ◽  
Vol 960 ◽  
Author(s):  
Philipp M. Nellen ◽  
Victor Callegari ◽  
Juergen Hofmann ◽  
Elmar Platzgummer ◽  
Christof Klein
Keyword(s):  
High Precision ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Fresnel Lenses ◽  
Closed Approach ◽  
Physical Effects

ABSTRACTWe present a closed approach towards direct microstructuring and high precision prototyping with focused ion beams (FIB). The approach uses the simulation of the involved physical effects and the modeling of geometry/topography during milling while the ion beam is steered over the surface. Experimental examples are given including the milling of single spots, trenches, rectangles, and Fresnel lenses. Good agreements between simulations and experiments were obtained. The developed procedures can also be applied to other FIB prototyping examples.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Implications of Helium and Neon Ion Beam Chemistry for Advanced Circuit Editing

2013 ◽  
Author(s):  
H. Wu ◽  
D. Ferranti ◽  
L.A. Stern ◽  
D. Xia ◽  
M.W. Phaneuf
Keyword(s):  
Integrated Circuit ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Deposition ◽  
Focused Ion Beams ◽  
Gas Field ◽  
General Utility ◽  
Neon Ion

Abstract Gallium focused ion beams (Ga-FIB) have been used historically in the semiconductor industry for failure analysis, as well as circuit edit. However, in spite of the best of these efforts, as integrated circuit dimensions continue to shrink, Ga-FIB induced processes are being driven to their physical limits. The main purpose of this paper is to report the helium and neon ion beams' induced chemistry, including metal deposition, dielectric deposition, and chemically enhanced etching. Two simple examples are shown as proofs of concept demonstrating gas field ion source (GFIS) development for circuit edit applications. The paper summarizes the general utility of helium and neon ion beams for metal deposition, dielectric deposition, and sputtering and etching processes, and discusses some of the technical challenges associated with current GFIS technology. Using GFIS ion beams, it has been observed that the top and buried metal lines can be cut precisely and then reconnected.

Maskless Etching of SiO2 by Ion Beam Assisted Etching Technique

1987 ◽  
Vol 101 ◽  
Author(s):  
Zheng Xu ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Energy Deposition ◽  
Ion Beam ◽  
Etching Rate ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Etching Technique ◽  
Physical Sputtering ◽  
H2 Addition ◽  
Ion Species ◽  
Energy Deposition Rate

ABSTRACTCharacteristics of ion beam assisted etching (IBAE) for SiO2 have been investigated to reveal'a possibility for maskless etching using focused ion beams. The ion beam assisted etching was done by bombarding 50 keV unfocused ion beams in XeF2 atmosphere and effect of various etching parameter on etching characteristics have been investigated. These are the effects of XeF2 gas pressure, bombarding ion species, bombarding angle and H2 addition, etc. Significant enhancements up to 100 times larger than physical sputtering were achieved. The selectivity of SiO2 to Si could be tailored to specific requirements from 0.1 to 6 by changing the gas mixing ratio. The etching rate was approximately proportional to the energy deposition rate bombarded by ion beam on surface. Carbon contamination on surface after etching were improved by the introduction of XeF2 gas.

Applications of Focused Ion Beams to Optoelectronic Device Fabrication - An Overview

1988 ◽  
Vol 126 ◽  
Author(s):  
Randall L. Kubena
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Ion Beams ◽  
Device Fabrication ◽  
Focused Ion Beams ◽  
The Past ◽  
Device Structures ◽  
Circuit Fabrication ◽  
Major Application

ABSTRACTFocused-ion-beam (FIB) technology has been applied during the past decade to a wide variety of device and circuit fabrication procedures. The ability to perform maskless implantation, selective sputtering and deposition, and high resolution lithography with a single system has allowed FIB researchers to explore a large number of unique fabrication processes for silicon, GaAs, and heterojunction devices. Currently, exploratory studies in advanced optoelectronic device fabrication employ the largest number of diverse FIB techniques. In this paper, the major application areas of FIB technology to optoelectronic research are reviewed, and possible uses of ultrasmall (≤500 Å) ion beams in the fabrication of optoelectronic device structures with novel properties are described.

Electron and Focused Ion Beams in Thermal Science and Engineering

2008 ◽  
Author(s):  
Tae-Youl Choi ◽  
Dimos Poulikakos
Keyword(s):  
Electron Beam ◽  
Heavy Ions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Deposition Method ◽  
Science And Engineering ◽  
Nanoscale Structures

Focused-ion-beam (FIB) is a useful tool for defining nanoscale structures. High energy heavy ions inherently exhibit destructive nature. A less destructive tool has been devised by using electron beam. FIB is mainly considered as an etching tool, while electron beam can be used for deposition purpose. In this paper, both etching and deposition method are demonstrated for applications in thermal science. Thermal conductivity of nanostructures (such as carbon nanotubes) was measured by using the FIB (and electron beam) nanolithography technique. Boiling characteristics was studied in a submicron heater that could be fabricated by using FIB.

scholarly journals Focused Ion Beams. Thin Film Growth by Low Energy Focused Ion Beam.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (12) ◽  
pp. 724-728
Author(s):  
Shinji NAGAMACHI ◽  
Masahiro UEDA ◽  
Junzo ISHIKAWA
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Thin Film Growth ◽  
Focused Ion Beams
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