Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires

2005 ◽  
Vol 44 (10) ◽  
pp. 7717-7719 ◽  
Author(s):  
Katsuhiko Nishiguchi ◽  
Olivier Crauste ◽  
Hideo Namatsu ◽  
Seiji Horiguchi ◽  
Yukinori Ono ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Silicon On Insulator ◽  
Back Gate ◽  
Gate Effect

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Fabrication and Electrical Characterization of Ultra-Thin Body and BOX (UTBB) Back Enhanced SOI (BESOI) pMOSFET

2020 ◽  
Vol 15 (1) ◽  
pp. 1-6
Author(s):  
Ricardo Cardoso Rangel ◽  
Katia R. A. Sasaki ◽  
Leonardo Shimizu Yojo ◽  
João Antonio Martino
Keyword(s):  
First Generation ◽  
Electrical Characterization ◽  
Current Drive ◽  
The Body ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Back Gate ◽  
Buried Oxide ◽  
Complementary Mos Technology

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.

Analysis of the Back-Gate Effect on the on-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Vol 6 (3) ◽  
pp. 377-385 ◽  
Author(s):  
S. Schwantes ◽  
J. Furthaler ◽  
B. Schauwecker ◽  
F. Dietz ◽  
M. Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs

2003 ◽  
Vol 24 (6) ◽  
pp. 414-416 ◽  
Author(s):  
V. Kilchytska ◽  
D. Levacq ◽  
D. Lederer ◽  
J.-P. Raskin ◽  
D. Flandre
Keyword(s):  
Small Signal ◽  
Back Gate ◽  
Gate Effect ◽  
Signal Output ◽  
Output Conductance

Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate

2004 ◽  
Vol 43 (4B) ◽  
pp. 2140-2144 ◽  
Author(s):  
Hyuckjae Oh ◽  
Hoon Choi ◽  
Takeshi Sakaguchi ◽  
JeoungChill Shim ◽  
Hiroyuki Kurino ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Back Gate
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