Overflow Handling Integrate-and-Fire Silicon-on-Insulator Neuron Circuit Incorporating a Schmitt Trigger Implemented by Back-Gate Effect

In this paper, we present a mixed-signal integrate and fire neuron designed in a 22-nm FDSOI technology. In this novel design, we deploy the back-gate terminal of FDSOI technology for a tunable design. For the first time, we show analytically and with pre- and post-layout simulations a neuron with tunable spiking frequency using the back-gate voltage of FDSOI technology. The neuron circuit is designed in the sub-threshold region and dissipates an ultra-low energy per spike of the order of Femto Joules per spike. With the layout area of only 30um^2, this is the smallest neuron circuit reported to date.

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Compact and Energy Efficient Neuron With Tunable Spiking Frequency in 22-nm FDSOI

10.36227/techrxiv.17056466 ◽

2021 ◽

Author(s):

Hossein Eslahi ◽

Tara Hamilton ◽

Sourabh Khandelwal

Keyword(s):

Energy Efficient ◽

Low Energy ◽

Threshold Region ◽

Back Gate ◽

Neuron Circuit ◽

Integrate And Fire ◽

Layout Area ◽

First Time ◽

Novel Design ◽

Integrate And Fire Neuron

In this paper, we present a mixed-signal integrate and fire neuron designed in a 22-nm FDSOI technology. In this novel design, we deploy the back-gate terminal of FDSOI technology for a tunable design. For the first time, we show analytically and with pre- and post-layout simulations a neuron with tunable spiking frequency using the back-gate voltage of FDSOI technology. The neuron circuit is designed in the sub-threshold region and dissipates an ultra-low energy per spike of the order of Femto Joules per spike. With the layout area of only 30um^2, this is the smallest neuron circuit reported to date.

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Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2005.850952 ◽

2005 ◽

Vol 52 (7) ◽

pp. 1649-1655 ◽

Cited By ~ 27

Author(s):

S. Schwantes ◽

T. Florian ◽

T. Stephan ◽

M. Graf ◽

V. Dudek

Keyword(s):

High Voltage ◽

Back Gate ◽

Gate Effect ◽

Soi Devices

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Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251241 ◽

2006 ◽

Cited By ~ 1

Author(s):

Stefan Schwantes ◽

Josef Furthaler ◽

Bernd Schauwecker ◽

Franz Dietz ◽

Michael Graf ◽

...

Keyword(s):

Breakdown Voltage ◽

Back Gate ◽

Gate Effect ◽

Soi Devices ◽

State Breakdown

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Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abe3d5 ◽

2021 ◽

Vol 60 (SB) ◽

pp. SBBA04

Author(s):

Takayuki Mori ◽

Jiro Ida

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Integrate And Fire ◽

Dual Gate ◽

Effect Transistor ◽

Integrate And Fire Neuron

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Fabrication and Electrical Characterization of Ultra-Thin Body and BOX (UTBB) Back Enhanced SOI (BESOI) pMOSFET

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v15i1.107 ◽

2020 ◽

Vol 15 (1) ◽

pp. 1-6

Author(s):

Ricardo Cardoso Rangel ◽

Katia R. A. Sasaki ◽

Leonardo Shimizu Yojo ◽

João Antonio Martino

Keyword(s):

First Generation ◽

Electrical Characterization ◽

Current Drive ◽

The Body ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Body ◽

Back Gate ◽

Buried Oxide ◽

Complementary Mos Technology

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.

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