Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

2019 ◽  
Keyword(s):  
Gate Voltage ◽  
Back Gate ◽  
Charge Pumping ◽  
Tunnel Fets ◽  
Ultrathin Soi

Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

2019 ◽  
Vol 89 (3) ◽  
pp. 111-120
Author(s):  
Carlos Diaz Llorente ◽  
Christoforos G. Theodorou ◽  
Jean-Pierre Colinge ◽  
Sorin Cristoloveanu ◽  
Sebastien Martinie ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Back Gate ◽  
Charge Pumping ◽  
Tunnel Fets ◽  
Ultrathin Soi

Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect

2020 ◽  
Vol 19 (2) ◽  
pp. 658-667 ◽  
Author(s):  
Tripuresh Joshi ◽  
Balraj Singh ◽  
Yashvir Singh
Keyword(s):  
Bias Effect ◽  
Ambipolar Current ◽  
Tunnel Fets ◽  
Ultrathin Soi

scholarly journals Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models

2018 ◽  
Vol 201 ◽  
pp. 01002
Author(s):  
Aanand ◽  
Gene Sheu ◽  
Syed Sarwar Imam ◽  
Shao Wei Lu ◽  
Shao-Ming Yang ◽  
...  
Keyword(s):  
Quantum Mechanics ◽  
Gate Voltage ◽  
Drain Current ◽  
Sensitivity Study ◽  
Compact Model ◽  
Current Sensitivity ◽  
Back Gate ◽  
Mechanics Model ◽  
Theoretical Predictions ◽  
Current Characteristics

In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.

scholarly journals Compact and Energy Efficient Neuron With Tunable Spiking Frequency in 22-nm FDSOI

2021 ◽  
Author(s):  
Hossein Eslahi ◽  
Tara Hamilton ◽  
Sourabh Khandelwal
Keyword(s):  
Gate Voltage ◽  
Energy Efficient ◽  
Low Energy ◽  
Back Gate ◽  
Neuron Circuit ◽  
Layout Area ◽  
First Time ◽  
Novel Design

<div>In this paper, we present an integrated and fire neuron designed in a 22-nm FDSOI technology. In this novel design, we deploy the back-gate terminal of FDSOI technology for a tunable design. For the first time, we show analytically and with pre- and post-layout simulations a neuron with tunable spiking frequency using the back-gate voltage of FDSOI technology. The neuron circuit is designed in the sub- hreshold region and dissipates an ultra-low energy per spike of the order of Femto Joules per spike. With the layout area of only 30 um2, this is the smallest neuron circuit reported to date.</div>

A MoS2 Field-Effect Transistor With a Liquid Back Gate

2016 ◽  
Author(s):  
Kabin Lin ◽  
Zhishan Yuan ◽  
Yu Yu ◽  
Kun Li ◽  
Haojie Yang ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Gate Voltage ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Control Effect ◽  
Back Gate ◽  
Potential Applications ◽  
Source Current ◽  
Effect Transistor

The two-dimensional layer of Molybdenum disulfide (MoS2) has attracted much interest due to its direct-gap property and potential applications in the field of catalysis, nanotribology, microelectronics, lithium batteries, hydrogen storage, medical, high-performance flexible electronics and optoelectronics. In this paper, based on few-layer MoS2 acquired by mechanical exfoliation method, a MoS2 liquid-gated field effect transistor (L-FET) is fabricated. Simultaneously, the few-layer MoS2 is characterized by Raman spectral. Then, the performance of MoS2-based L-FET devices is investigated by a source meter instrument in the different back gate voltage of 0.1mol/L NaCl solution. The result reveals that the Schottky barriers is formed between platinum and few-layer MoS2 and the back gate voltage has a great control effect with the drain-to-source current of MoS2 field effect transistor.

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