Stress Measurements in Thin Films Deposited on Single Crystal Substrates Through X-ray Topography Techniques

1976 ◽  
Vol 20 ◽  
pp. 273-281 ◽  
Author(s):  
E. W. Hearn
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Integrated Circuit ◽  
Large Scale ◽  
Silicon Oxide ◽  
Double Crystal ◽  
X Ray ◽  
Quantitative Measurements ◽  
Order Of Magnitude ◽  
Polycrystalline Silicon Films

The application of x-ray topographic techniques to the measurement of stress in thin, films is discussed. Quantitative measurements of stresses in thin films deposited on semiconductor substrates, such as silicon, are also discussed. Double crystal and single crystal techniques are used for such measurements. Both techniques are applied to the measurements of stress in silicon oxide, silicon nitride and polycrystalline silicon films on silicon. The doubly crystal technique is useful for measurements of stresses as low as 109 dynes/cm2 in films only 1000A thick. The single crystal technique is less sensitive by one order of magnitude. The advantage of the single crystal technique is its simplicity and speed. It is useful for large scale measurements as encountered in the manufacture of silicon integrated circuit.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

scholarly journals Single-Crystal-like Structure of Poly(9,9-dioctylfluorene) Thin Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction

2007 ◽  
Vol 39 (12) ◽  
pp. 1306-1311 ◽  
Author(s):  
Masahiro Misaki ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Yuji Yoshida ◽  
Reiko Azumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

MOCVD Growth and Characterization of High-Quality ZnSe on GaAs

1994 ◽  
Vol 340 ◽  
Author(s):  
J. C. Chen ◽  
Bing Yang ◽  
F. Semendy ◽  
W. W. Clark ◽  
P. R. Boyd ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Defect Density ◽  
Growth Conditions ◽  
Misfit Dislocations ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Mocvd Growth ◽  
Order Of Magnitude

ABSTRACTHigh-quality ZnSe epilayers on GaAs substrates have been grown by MOCVD. Diethylzinc (DEZn) and diethylselenide (DESe) were used as source materials. Growth studies were done at 400°C under different growth conditions in an atmospheric pressure MOCVD reactor. The as-grown ZnSe epilayers were characterized by a wide variety of techniques, such as double crystal x-ray diffraction, low-temperature photoluminescence (PL), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS), and scanning electron microscopy (SEM).The results show excellent structural and optical properties of ZnSe. The best material was grown on undoped GaAs at the VI/II ratio near unity. The full-width-at-half-maximum (FWHM) of ZnSe (∼0.2/μm thick) x-ray peak as low as 90 arc seconds was achieved. TEM results also show very low defect density. The density of stacking faults is less than 105/cm2 which is four orders of magnitude less than that of samples grown by conventional MBE [J. Petruzzello et al. J. Appl. Phys. 63, 2299 (1988)] and MOCVD [J.L. Batstone et al. Philos. Mag A, 66, 609, 1992]. The spacing between misfit dislocations is between 5 to 10,μm which is one order of magnitude larger than that of reported sample of comparable thickness.

Compositional and Texture Analysis of Tantalum Thin Films by Energy Dispersive X-Ray Analysis

1973 ◽  
Vol 27 (2) ◽  
pp. 99-102 ◽  
Author(s):  
H. S. deBen ◽  
Barret Broyde
Keyword(s):  
Thin Films ◽  
Texture Analysis ◽  
Diffraction Method ◽  
Preferred Orientation ◽  
Energy Dispersive ◽  
X Ray ◽  
Quantitative Measurements

Quantitative measurements of concentrations are given for the phases present in undoped tantalum thin films by the use of energy-dispersive x-ray detectors. This diffraction method can also yield the extent of preferred orientation.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

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