Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions
1991 ◽
Vol 14
(3)
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pp. 151-161
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ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.
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1994 ◽
Vol 21
(3)
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pp. 193-197
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2010 ◽
Vol 57
(6(1))
◽
pp. 1794-1798
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2020 ◽
Vol 31
(4)
◽
pp. 2729-2740
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2011 ◽
Vol 29
(6)
◽
pp. 06B104
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