scholarly journals Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Mahesh Kumar ◽  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
Mohana K. Rajpalke ◽  
A. T. Kalghatgi ◽  
...  
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Schottky Diodes ◽  
Indium Nitride ◽  
Effective Area ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Correct Determination ◽  
Barrier Inhomogeneity ◽  
20 Nm

The electrical transport behavior ofn-nindium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (η) and Schottky barrier height (SBH) (ΦB) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination ofA**. The Richardson constant is extracted ~110 A cm-2K-2using the BHI model and that is in very good agreement with the theoretical value of 112 A cm-2K-2. The second model uses Gaussian statistics and by this, mean barrier heightΦ0andA**were found to be 0.69 eV and 113 A cm-2K-2, respectively.

scholarly journals Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

2014 ◽  
Vol 60 ◽  
pp. 012041 ◽  
Author(s):  
M Asghar ◽  
K Mahmood ◽  
S Rabia ◽  
Samaa B M ◽  
M Y Shahid ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Temperature Dependent

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

2012 ◽  
Vol 98 ◽  
pp. 6-11 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Ali Kökce ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Temperature Dependent

Comparative Study of Temperature Dependent Barrier Heights of Pd/ZnO Schottky Diodes Grown along Zn- and O-Faces

2012 ◽  
Vol 510-511 ◽  
pp. 265-270 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan
Keyword(s):  
Barrier Height ◽  
Deep Level ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Growth Conditions ◽  
Distribution Model ◽  
Metal Contacts ◽  
Temperature Dependent ◽  
Barrier Heights ◽  
Two Samples

In this study, the effect of polar face on Schottky barrier diodes has been investigated. Two samples of ZnO were grown hydrothermally under similar growth conditions. The Palladium (Pd) metal contacts of area 0.78 mm2were fabricated on both faces and were studied comprehensively using DLS-83 Deep Level Spectrometer over temperature range of 160K330K. The current-voltage (IV) measurements revealed that the ideality factor n and barrier height ϕBwere strongly temperature dependent for both faces (Zn and O-face) of ZnO, indicating that the thermionic emission is not the dominant process, which showed the inhomogenity in the barrier heights of grown samples. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear ϕapverses n plot to n = 1 has given a homogeneous barrier height of approximately 0.88±0.01 eV and 0.76±0.01 eV for Zn and O-faces respectively. ϕapversus 1/T plot was drawn to obtain the values of mean barrier height for Zn and O-face (0.88±0.01 eV, 0.76±0.01 eV) and standard deviation (δs) (0.015±0.001 V, 0.014±0.001 V) at zero bais respectively. The value of δsfor the Zn-face is larger than O-face, showing that inhomogenity in the barrier heights is more in the sample grown along Zn-face as compared to the sample grown along O-face.

BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER

2008 ◽  
Vol 22 (29) ◽  
pp. 5167-5173 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
F. K. YAM ◽  
C. W. CHIN ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Barrier Height ◽  
Schottky Diode ◽  
Dark Current ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Wide Band ◽  
Hexagonal Wurtzite Structure ◽  
Full Characterization ◽  
Si Substrates

Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon-based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a thin AlN cap layer of 50 nm was incorporated in GaN Schottky diode to enhance the effective Schottky barrier height and reduces the dark current. A barrier height of 0.52 eV for normal GaN Schottky diode was increased to the effective barrier height of 0.63 eV. The resulting Schottky diodes show a dark current of as low as 6.3×10-5 A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (5.2×10-3 A at 5 V bias) Schottky diode.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

2011 ◽  
Vol 109 (4) ◽  
pp. 044502-044502-5 ◽  
Author(s):  
Basanta Roul ◽  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Mahesh Kumar ◽  
Neeraj Sinha ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Gan Heterostructure

scholarly journals Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Rama Venkata Krishna Rao ◽  
Ajinkya K. Ranade ◽  
Pradeep Desai ◽  
Golap Kalita ◽  
Hiroo Suzuki ◽  
...  
Keyword(s):  
Barrier Height ◽  
Saturation Current ◽  
Copper Iodide ◽  
Temperature Dependent ◽  
Electrical Hysteresis ◽  
Current Voltage ◽  
Heterojunction Device ◽  
Reverse Saturation Current ◽  
Barrier Inhomogeneity ◽  
P Type

Abstract Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states. Article Highlights We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction. The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K. We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization. Graphic abstract

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

2012 ◽  
Vol 209 (8) ◽  
pp. 1575-1578 ◽  
Author(s):  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
Mahesh Kumar ◽  
Mohana K. Rajpalke ◽  
A. T. Kalghatgi ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

THE CURRENT–VOLTAGE CHARACTERISTICS OF THE Au/MBEn-GaAs SCHOTTKY DIODES IN A WIDE TEMPERATURE RANGE

2013 ◽  
Vol 27 (19) ◽  
pp. 1350088 ◽  
Author(s):  
HASAN EFEOǦLU ◽  
ABDULMECIT TURUT
Keyword(s):  
Schottky Diodes ◽  
Thermionic Emission ◽  
Effective Area ◽  
Current Theory ◽  
Temperature Dependent ◽  
Temperature Range ◽  
A Value ◽  
Current Voltage ◽  
Lateral Inhomogeneity ◽  
Current Voltage Characteristics

The Au/MBE n- GaAs Schottky diodes have been fabricated by us. The slope of the conventional ln (I0/T2) versus (kT)-1 plotted in the temperature range of 120–350 K has given a Richardson constant (RC) of 7.69 A (cmK)-2 which is in close agreement with the value of 8.16 A/cm2 K 2 known for n-type GaAs . The barrier height (BH) value in 40–160 K range has decreased obeying to Gaussian distribution (GD) model of the BH based on thermionic emission current theory. The modified RC plot according to the GD model has given a RC value of 2.45 A (cmK)-2 or a value of 2.38 A (cmK)-2 by taking into account the temperature dependence of the standard deviation. Therefore, we have modified the Richardson's plot using the temperature dependent values of the effective area of the patches introduced by lateral inhomogeneity of the BHs and we have obtained a RC value of 8.10 A (cmK)-2.

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