scholarly journals Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

2011 ◽  
Vol 2011 ◽  
pp. 1-8
Author(s):  
Agnes Nagy ◽  
Alicia Polanco ◽  
Manuel Alvarez
Keyword(s):  
Integrated Circuits ◽  
Extraction Method ◽  
Bipolar Transistors ◽  
Electronic Systems ◽  
Emission Coefficient ◽  
Physical Explanation ◽  
Simulation Procedure ◽  
Physical Effects ◽  
Precise Simulation ◽  
Theoretical Results

The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potentialVDE(T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Confirming the Signal Integrity in Transmission of Digital Signals on Microstrip Straight Circuits via the Eye Diagrams

2014 ◽  
Vol 5 (1) ◽  
pp. 737-741
Author(s):  
Alejandro Dueñas Jiménez ◽  
Francisco Jiménez Hernández
Keyword(s):  
Integrated Circuits ◽  
Printed Circuit Board ◽  
Signal Integrity ◽  
High Volume ◽  
Information Storage ◽  
Circuit Board ◽  
Electromagnetic Simulation ◽  
Electronic Systems ◽  
Digital Signals ◽  
Printed Circuit

Because of the high volume of processing, transmission, and information storage, electronic systems presently requires faster clock speeds tosynchronizethe integrated circuits. Presently the “speeds” on the connections of a printed circuit board (PCB) are in the order of the GHz. At these frequencies the behavior of the interconnects are more like that of a transmission line, and hence distortion, delay, and phase shift- effects caused by phenomena like cross talk, ringing and over shot are present and may be undesirable for the performance of a circuit or system.Some of these phrases were extracted from the chapter eight of book “2-D Electromagnetic Simulation of Passive Microstrip Circuits” from the corresponding author of this paper.

A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

2005 ◽  
Vol 10 (2) ◽  
pp. 405-409
Author(s):  
Shi Xin-zhi ◽  
Liu Hai-wen ◽  
Sun Xiao-wei ◽  
Che Yan-feng ◽  
Cheng Zhi-qun ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

Parapsychology

2018 ◽  
Author(s):  
Allen Stairs
Keyword(s):  
Physical Environment ◽  
Experimental Methods ◽  
Physical Processes ◽  
Physical Explanation ◽  
Scientific Methods ◽  
Extrasensory Perception ◽  
Physical Effects ◽  
Psi Phenomena

Tales of dreams that come true, ‘mind over matter’ and other such oddities are both familiar and old. Parapsychology investigates such things, attempting to use scientific and, especially, experimental methods to investigate whether and in what circumstances humans can glean information without using ordinary perceptual means (that is, by extrasensory perception or ESP) or can alter the physical environment simply by willing it (that is, by psychokinesis). Such phenomena, if they exist, are often grouped under the heading psi(-phenomena). It is sometimes claimed that parapsychology presents a challenge to physicalism. However, ostensible psi-phenomena are known through their physical effects and are studied within parapsychology by ordinary scientific methods. In fact, models intended to explain psi-phenomena by known physical processes have been seriously discussed within parapsychology. In any case, parapsychology alone could not show that psi-phenomena have no physical explanation; that is a judgment for physics itself. More important, physicalism is a very broad doctrine that should not simply be equated with the requirement that everything be explained within physics. It is very unclear what we would gain by denying that psi-phenomena are physical.

A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits

2013 ◽  
Vol 10 (4) ◽  
pp. 155-162 ◽  
Author(s):  
L. Lanni ◽  
B. G. Malm ◽  
C.-M. Zetterling ◽  
M. Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Bipolar Transistors ◽  
Digital Integrated Circuits ◽  
Successful Operation ◽  
Bipolar Technology ◽  
Propagation Delays ◽  
Interconnect Systems

A 4H-SiC bipolar technology suitable for high-temperature integrated circuits is tested with two interconnect systems based on aluminum and platinum. Successful operation of low-voltage bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) is reported from 27°C up to 500°C for both the metallization systems. When operated on −15 V supply voltage, aluminum and platinum interconnect OR-NOR gates showed stable noise margins of about 1 V and asymmetric propagation delays of about 200 and 700 ns in the whole temperature range for both OR and NOR output. The performance of aluminum and platinum interconnects was evaluated by performing accelerated electromigration tests at 300°C with current density of about 1 MA/cm2 on contact chains consisting of 10 integrated resistors. Although in both cases the contact chains failed after less than one hour, different failure mechanisms were observed for the two metallization systems: electromigration for the aluminum system and poor step coverage and via filling for the platinum system.

VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits

1984 ◽  
Vol 31 (12) ◽  
pp. 1980-1980
Author(s):  
A.N.M. Masum Choudhury ◽  
K. Tabatabaie-Alavi ◽  
J.C. Vlcek ◽  
H. Kanbe ◽  
C.G. Fonstad
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Digital Integrated Circuits
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