scholarly journals Chemical Bath Deposition of PbS:Hg2+Nanocrystalline Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
R. Palomino-Merino ◽  
O. Portillo-Moreno ◽  
L. A. Chaltel-Lima ◽  
R. Gutiérrez Pérez ◽  
M. de Icaza-Herrera ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Morphological Changes ◽  
X Rays ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Zinc Blende ◽  
20 Nm ◽  
Nanocrystalline Thin Films

Nanocrystalline PbS thin films were prepared by Chemical Bath Deposition (CBD) at 40 ± 2°C onto glass substrates and their structural and optical properties modified by in-situ doping with Hg. The morphological changes of the layers were analyzed using SEM and the X-rays spectra showing growth on the zinc blende (ZB) face. The grain size determined by using X-rays spectra for undoped samples was found to be~36 nm, whereas with the doped sample was 32–20 nm. Optical absorption spectra were used to calculate theEg, showing a shift in the range 1.4–2.4 eV. Raman spectroscopy exhibited an absorption band~135 cm−1displaying only a PbS ZB structure.

scholarly journals Electrochromism in tungsten oxide thin films prepared by chemical bath deposition

2017 ◽  
pp. 27 ◽  
Author(s):  
Julijana Velevska ◽  
Nace Stojanov ◽  
Margareta Pecovska-Gjorgjevich ◽  
Metodija Najdoski
Keyword(s):  
Thin Films ◽  
Tungsten Oxide ◽  
Chemical Bath Deposition ◽  
Response Times ◽  
Glass Substrates ◽  
Deep Blue ◽  
Energy Gaps ◽  
Visible Transmittance ◽  
Tungsten Oxide Thin Films

<p class="PaperAbstract"><span lang="EN-US">Tungsten oxide (WO<sub>3</sub>) thin films were prepared by a simple, economical, chemical bath deposition method onto fluorine doped tin oxide (FTO) coated glass substrates. The electrochemical properties of the films were characterized by cyclic voltammetry. The obtained films exhibited electrochromism, changing color from initially colorless to deep blue, and back to colorless. Visible transmittance spectra of (WO<sub>3</sub>) films were recorded in-situ in their both, bleached and colored states. From those spectra, absorption coefficient (</span><span lang="EN-US">a</span><span lang="EN-US">) and the optical energy gaps were evaluated. The dependence of the optical density on the charge density was examined and the coloration efficiency (</span><span lang="EN-US">h</span><span lang="EN-US">) was calculated to be 22.11 cm<sup>2 </sup>C<sup>-1</sup>. The response times of the coloring and bleaching to an abrupt potential change from -2.5 V to +2.5 V and reverse, were found to be 9.3 and 1.2 s respectively. The maximum light intensity modulation ability of the films, when the AM1.5 spectrum is taken as an input, was calculated to be about 50 %.</span></p>

scholarly journals Properties of PbS: Ni2+ Nanocrystals in Thin Films by Chemical Bath Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-12 ◽  
Author(s):  
O. Portillo Moreno ◽  
L. A. Chaltel Lima ◽  
M. Chávez Portillo ◽  
S. Rosas Castilla ◽  
M. Zamora Tototzintle ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Morphological Changes ◽  
Energy Shift ◽  
Dark Conductivity ◽  
Interplanar Distance ◽  
Bandgap Energy ◽  
X Rays ◽  
Ni Doping ◽  
Crystalline Films

The growth of nanocrystalline PbS films by chemical bath deposition (CBD) onto glass at temperature is presented in this research. We report on the modification of structural, optical, and electrical nanostructures due to in situ Ni-doping. The morphological changes of the layers were analyzed using SEM, AFM, and TEM. XRD spectra displayed peaks at 2θ = [26.00, 30.07, 43.10, 51.00, 53.48], indicating growth on the zinc blende face. The grain size determined by X-rays diffraction of the undoped samples was 36 nm, whereas with the doped sample was 3.2–5 nm. By TEM, the doped PbS was found crystalline films in the range 3.5–5 nm. Optical absorption (OA), and forbidden bandgap energy shift disclose a shift in the range 2.1–3.8 eV. Likewise, the dependence of with the radius size and interplanar distance of the lattice is discussed. Raman spectroscopy (RS) exhibited an absorption band 135 cm−1 displaying only a PbS ZB structure. The thermal energy for the films was determined from the slope of dark conductivity (DC) and the energy was estimated to be 0.15 to 0.5 eV.

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

2014 ◽  
Vol 320 ◽  
pp. 309-314 ◽  
Author(s):  
Biswajit Ghosh ◽  
Kamlesh Kumar ◽  
Balwant Kr Singh ◽  
Pushan Banerjee ◽  
Subrata Das
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Coated Glass ◽  
Glass Substrates ◽  
Cds Thin Films

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

2013 ◽  
Vol 665 ◽  
pp. 159-167
Author(s):  
M.S. Jani ◽  
H.S. Patel ◽  
J.R. Rathod ◽  
K.D. Patel ◽  
V.M. Pathak ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
Structural And Optical Properties ◽  
Structural Investigations ◽  
Glass Substrates ◽  
Optical Bandgap Energy ◽  
Different Thickness

In this paper structural and optical properties of CdSe thin films with different thickness deposited by thermal evaporation under vacuum onto glass substrates are presented. The structural investigations performed by means of XRD technique showed that the films have a polycrystalline and hexagonal (würtzite) structure. The values of some important parameters of the studied films (absorption coefficient and optical bandgap energy) are determined from transmission spectra. The values of the optical bandgap energy (Eg) calculated from the absorption spectra, ranged between 1.67 - 1.74 eV.

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

Formation and characterization of high-density silver nanoparticles embedded in silica thin films by “in situ” self-reduction

2001 ◽  
Vol 16 (10) ◽  
pp. 2934-2938 ◽  
Author(s):  
G. Compagnini ◽  
M. M. Fragal´ ◽  
L. D'Urso ◽  
C. Spinella ◽  
O. Puglisi
Keyword(s):  
Thin Films ◽  
Silver Nanoparticles ◽  
High Density ◽  
Silver Particles ◽  
X Ray Diffraction ◽  
Optical Extinction ◽  
Organometallic Precursor ◽  
Silica Thin Films ◽  
20 Nm

Silver nanoparticles (10–20 nm) embedded into silica thin films have been obtained through the use of a silver organometallic precursor compound dissolved in Spin-On-Glass and subsequently spinned onto suitable substrates. In this paper we present a study of the shape, size, and distribution of silver particles through the use of microscopes, x-ray diffraction, and optical extinction. It has been observed that the obtained films are stable for annealing up to 500 °C with a progressive degradation above this temperature. Furthermore it is possible to obtain high-density silver particles up to 15% in weight without affecting the cluster size and shape.

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