scholarly journals Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Min-Hang Weng ◽  
Cheng-Tang Pan ◽  
Chien-Wei Huang ◽  
Ru-Yuan Yang
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Grain Growth ◽  
Silicon Film ◽  
Silicon Layer ◽  
Optical Microscope ◽  
Dark Conductivity ◽  
Capping Layer ◽  
Short Annealing

We investigated the capping layer effect of SiNx(silicon nitride) on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon) prepared by aluminum induced crystallization (AIC). The primary multilayer structure comprised Al (30 nm)/SiNx(20 nm)/a-Si (amorphous silicon) layer (100 nm)/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD) and Raman spectra. The grain growth was analyzed via optical microscope (OM) and scanning electron microscopy (SEM). The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V) measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNxcapping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Analytical Studies of the Capping Layer Effect on Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Husam Abu-Safe ◽  
Abul-Khair M. Sajjadul-Islam ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Layer Structure ◽  
Silicon Layer ◽  
Nodule Formation ◽  
Capping Layer ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Layer Effect ◽  
Polysilicon Films ◽  
Induced Crystallization

AbstractThe effect of capping layer on metal induced crystallization of amorphous silicon was studied. Three sets of samples were prepared in this study. All samples had the basic layer structure of amorphous silicon layer deposited on a glass substrate. This was followed by a thin aluminum layer deposition. The second and third sets, however, had a third layer of amorphous silicon with thicknesses of 20 and 50 nm, respectively. These layers were deposited on top of the aluminum. The samples were annealed at 400°C for 15, 30 and 45 minutes. The crystallization fraction in the resultant films was analyzed using X-Ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and atomic force microscopy. It was observed that the capping layer reduces nodule formation improving the smoothness of the crystallized polysilicon films.

Control of Single-Electron Charging of Metallic Nanoparticles onto Amorphous Silicon Surface

2008 ◽  
Vol 8 (11) ◽  
pp. 5684-5689 ◽  
Author(s):  
Martin Weis ◽  
Katarína Gmucová ◽  
Vojtech Nádaždy ◽  
Ignác Capek ◽  
Alexander Šatka ◽  
...  
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Double Layer ◽  
Metallic Nanoparticles ◽  
Weak Link ◽  
Silicon Film ◽  
Silicon Layer ◽  
Surface Region ◽  
Single Electron ◽  
Simultaneous Application

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Deposition of Device Quality Amorphous Silicon by Hot-Wire CVD

1997 ◽  
Vol 467 ◽  
Author(s):  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
E. C. Molenbroek ◽  
R. E. I. Schropp
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Diffusion Length ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Hot Wire ◽  
Tungsten Filaments ◽  
Wire Method ◽  
Hydrogenated Amorphous

ABSTRACTIn this paper we present the results of the optimization of hydrogenated amorphous silicon films deposited by the hot-wire method in a larger area system. Using a two-wire design, we succeeded in depositing films that exhibit uniform electrical properties over the whole 4” x 4” Corning 7059 glass substrate. At a substrate temperature of 430 °C. and a pressure of 20 μbar we obtained a growth rate of ∼2 nm/s. The temperature of the tungsten filaments was kept at 1850 °C. The values for the photoconductivity and dark conductivity were 8.9×10−6 S/cm and 1.6×10−10 S/cm respectively, whereas the ambipolar diffusion length, as measured with the Steady-State Photocarrier Grating technique (SSPG), amounted to 145 nm. This value is higher than for our device quality glow-discharge (GD) films, which yield devices with efficiencies higher than 10%. The hydrogen content was 9.5%.We report on the density-of-states (DOS) distribution in the films, which was measured with the techniques of Thermally Stimulated Conductivity (TSC) and Constant Photocurrent Method (CPM). Furthermore, we describe the behavior of the electrical properties on light-induced degradation. Finally, we incorporated these films in solar cells, using conventional GD doped layers. Preliminary SS/n-i-p/ITO devices yielded efficiencies in excess of 3% under 100 mW/cm2 AM 1.5 illumination. Further work concerning the optimization of the interfaces is in progress.

Nano-Indentation for Measurement on Mechanical Property of Building Integrated Amorphous Silicon Thin-Film PV Cell

2014 ◽  
Vol 638-640 ◽  
pp. 1365-1368
Author(s):  
Shun Mei Li ◽  
Jun Mei ◽  
Yu Liu ◽  
Yong Yao ◽  
Lin Gang Lan ◽  
...  
Keyword(s):  
Thin Film ◽  
Elastic Modulus ◽  
Amorphous Silicon ◽  
Loading Rate ◽  
Silicon Film ◽  
Peak Load ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Testing Method ◽  
Pv Cell

Amorphous silicon thin-film PV cell(AST) generally consists of a few – micron thick silicon film on a glass substrate, which has difficulty for being accurately measured by using a conventional testing method to obtain its elastic modulus and hardness. In our study, we are applying nanoindentation for the measurement purpose and divide the sample into five regions for studying. Both of peak load - and loading rate - dependences supervise us to more accurately measure the mechanical properties of silicon layer through defining the peak load at 9000μN and loading rate at 1000μN/s. It was also observed that across the whole sample measurements on the elastic modulus have much better consistence than those on the hardness. We therefore propose a method of partitioning the sample into two parts for counting the different hardness measurements.

A Simple Lateral Grain Growth of Poly-Si by Single Excimer Laser Crystallization of Amorphous Silicon Film Deposited on Polygon Shaped Trench

2003 ◽  
Vol 762 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Su-Hyuk Kang ◽  
Hee-Sun Shin ◽  
Min-Koo Han
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Excimer Laser ◽  
Silicon Film ◽  
Acute Angle ◽  
Molten Silicon ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Excimer Laser Irradiation ◽  
Excimer Laser Crystallization

AbstractA simple lateral grain growth of polysilicon employing single excimer laser irradiation is proposed. In order to increase the size of silicon grain and to control the location of the large lateral grain, the oxide trench is employed under the amorphous silicon film in the proposed method. The proposed oxide trench, which is shaped like a triangle or a polygon with an acute angle, induces temperature gradient on the molten silicon film during the solidification. It was verified by SEM that about 2 μm-long silicon grains are successfully achieved near the oxide trench edge and the locations of lateral grains are controlled by the angular points of the diagram.

Towards an All-Hot-Wire TFT: Silicon Nitride and amorphous Silicon deposited by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
B. Stannowski ◽  
M.K. van Veen ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

ABSTRACTWe present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.

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