scholarly journals XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Saliha Ilican ◽  
Mujdat Caglar ◽  
Seval Aksoy ◽  
Yasemin Caglar
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Series Resistance ◽  
Thermionic Emission ◽  
X Ray ◽  
Current Voltage ◽  
Doped Zno ◽  
Zno Crystal ◽  
Zno Rods ◽  
Good Agreement

The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS). These results confirmed the existence of F as a doping element into ZnO crystal lattice. Thep-Si/n-ZnOandp-Si/n-FZNheterojunction diodes were fabricated and their electrical properties were investigated. Some parameters belong to these diodes such as ideality factor (n), barrier height (ϕB), and series resistance (Rs) which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde’s function, and Cheung’s method. There is a good agreement between the diode parameters obtained from different methods.

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Investigation of Stress and Electrical Properties of Air-Annealed and Oxygen-Annealed Aluminium-Doped Zinc Oxide Nanorod Arrays

2013 ◽  
Vol 832 ◽  
pp. 303-309
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Vertically Aligned ◽  
Doped Zno

In this research, we prepared aluminium (Al)-doped ZnO nanorod arrays on the glass substrate using sonicated sol-gel method. These nanorod arrays were annealed at 500 °C in air and oxygen environment using thermal furnace. Field emission scanning electron microscopy (FESEM) image reveals that nanorod arrays were deposited vertically aligned on the substrate. The stress characteristics of air-annealed and oxygen-annealed Al-doped ZnO nanorod arrays were investigated using Raman spectroscopy and X-ray diffraction (XRD) measurement. The electrical properties of the samples were investigated using two-probe current-voltage (I-V) measurement system. The results show that annealing atmospheres greatly influenced the stress and electrical properties of the nanorod arrays.

Magnetic Properties of Bulk Zn0.95-XMnXFe0.05O2 Prepared by Sol-Gel Method and Subsequent Hot Pressing

2011 ◽  
Vol 268-270 ◽  
pp. 356-359 ◽  
Author(s):  
Wen Song Lin ◽  
C. H. Wen ◽  
Liang He
Keyword(s):  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Sol Gel ◽  
Secondary Phase ◽  
X Ray Diffraction ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Mn, Fe doped ZnO powders (Zn0.95-xMnxFe0.05O2, x≤0.05) were synthesized by an ameliorated sol-gel method, using Zn(CH3COO)2, Mn(CH3COO)2and FeCl2as the raw materials, with the addition of vitamin C as a kind of chemical reducer. The resulting powder was subsequently compacted under pressure of 10 MPa at the temperature of 873K in vacuum. The crystal structure and magnetic properties of Zn0.95-xMnxFe0.05O2powder and bulk samples have been investigated by X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). X-ray photoelectron spectroscopy (XPS) was used to study chemical valence of manganese, iron and zinc in the samples. The x-ray diffraction (XRD) results showed that Zn0.95-xMnxFe0.05O (x≤0.05) samples were single phase with the ZnO-like wurtzite structure. No secondary phase was found in the XRD spectrum. X-ray photoelectron spectroscopy (XPS) showed that Fe and Mn existed in Zn0.95-xMnxFe0.05O2samples in Fe2+and Mn2+states. The results of VSM experiment proved the room temperature ferromagnetic properties (RTFP) of Mn, Fe co-doped ZnO samples.

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Influence of Cu(NO3)2 content used in thermal shock method on the photocatalytic activity of Cu-Modified ZnO nanoparticles

2021 ◽  
Vol 5 (3) ◽  
pp. first
Author(s):  
Thế Luân Nguyễn ◽  
Tiến Khoa Lê ◽  
Châu Ngọc Hoàng ◽  
Hữu Khánh Hưng Nguyễn ◽  
Thị Kiều Xuân Huỳnh
Keyword(s):  
Crystal Structure ◽  
Methylene Blue ◽  
Photocatalytic Activity ◽  
Thermal Shock ◽  
Photoelectron Spectroscopy ◽  
Copper Content ◽  
Uv Light ◽  
Copper Nitrate ◽  
X Ray ◽  
Doped Zno

The Cu doped ZnO photocatalysts were prepared on ZnO substrate modified with copper nitrate by thermal shock method with different ratio % molar Cu : Zn = 0.3, 0.5, 1.0, 2.0 and 5.0 in order to study the impacts of copper content on the photocatalytic activity of ZnO under both UV and Vis light irradiation. The crystal structure, morphology bulk and surface were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Their photocatalytic activities were studied via time-dependent degradation of methylene blue in aqueous solution. The results exhibit that crystal structure and morphology of Cu doped ZnO photocatalysts is not modified significally than ZnO original but surface charateristicschanged greatly. The photocatalyst was doped with copper content under 2% showed formation of Cu species. These samples perform photocatalytic activity higher than ZnO. The CuNZO-0.05-500 had the highest rate constants for methylene blue degradation (kUV = 6,901 h-1, kVIS = 0,224 h-1), which are about 2.2 times and 1.3 times higher than unmodified ZnO under UV light and Vis light, respectively. However, the CuNZO-5.0-500 which had the formation of CuO phase and unchangeable ZnO's surface has photocatalytic activity similar to pure ZnO.

scholarly journals Studies of Effects of Calcination Temperature on the Crystallinity and Optical Properties of Ag-Doped ZnO Nanocomposites

2019 ◽  
Vol 3 (1) ◽  
pp. 18 ◽  
Author(s):  
Md. Molla ◽  
Mai Furukawa ◽  
Ikki Tateishi ◽  
Hideyuki Katsumata ◽  
Satoshi Kaneco
Keyword(s):  
Optical Properties ◽  
Calcination Temperature ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Band Edge ◽  
High Yield ◽  
Band Edge Emission ◽  
X Ray ◽  
Calcination Temperatures ◽  
Doped Zno

Ag-doped ZnO nanocomposites are successfully synthesized at different calcination temperatures and times through a simple, effective, high-yield and low-cost mechanochemical combustion technique. Effects of calcination temperature on the crystallinity and optical properties of Ag/ZnO nanocomposites have been studied by X-ray diffraction (XRD), UV−visible diffuse reflectance spectroscopy (UV-DRS), photoluminescence spectroscopy (PL) and X-ray photoelectron spectroscopy (XPS). The XRD patterns of the synthesized Ag/ZnO exhibit a well-crystalline wurtzite ZnO crystal structure. The grain size of Ag/ZnO nanocomposites is found to be 19 and 46 nm at calcination temperatures of 400 °C and 700 °C, respectively. The maximum absorption in the UV region is obtained for Ag/ZnO nanocomposites synthesized at a calcination temperature of 500 °C for 3 h. The peak position of blue emissions is almost the same for the nanocomposites obtained at 300–700 °C calcination temperatures. The usual band edge emission in the UV is not obtained at 330 nm excitation. Band edge and blue band emissions are observed for the use of low excitation energy at 335–345 nm.

scholarly journals X-ray Photoelectron Spectroscopy with Electrical Modulation Can Be Used to Probe Electrical Properties of Liquids and Their Interfaces at Different Stages

Langmuir ◽  
2019 ◽  
Vol 35 (52) ◽  
pp. 16989-16999
Author(s):  
Can Berk Uzundal ◽  
Ozgur Sahin ◽  
Pinar Aydogan Gokturk ◽  
Hao Wu ◽  
Frieder Mugele ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Electrical Modulation

Effect of Sintering Temperature on Microstructure and Electrical Properties of Nanozinc Oxide Varistor

2011 ◽  
Vol 495 ◽  
pp. 190-193 ◽  
Author(s):  
Mehdi Mirzayi ◽  
Mohammad Hoseen Hekmatshoar ◽  
Abdolazim Azimi
Keyword(s):  
Electrical Properties ◽  
Sintering Temperature ◽  
Voltage Characteristic ◽  
X Ray Diffraction ◽  
Current Voltage Characteristic ◽  
X Ray ◽  
Current Voltage ◽  
Polyacrylamide Gel Method ◽  
Zno Powder ◽  
Scanning Electron

Nanometer-sized ZnO powder was synthesized at low decomposing temperature by polyacrylamide-gel method where Acrylamide was used as monomer, and N,N-methylene-bisacrylamide as lattice reagent. The characteristic of powders were studied by X-ray diffraction and scanning electron microscope (SEM). The results indicated uniform distribution of nanoZnO particles. Also electrical properties were investigated at different sintering temperatures of 800, 900 and 1000 ° C. It was observed that increase in sintering temperature, resulted in increase in the grain size of the varistor ceramics. The observed nonlinearity in current – voltage characteristic was explained by the existence of potential barrier at the grain boundaries and lowering of the barriers.

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