Rapid Melt Growth of Single Crystal InGaAs on Si Substrates

InGaAs integration on Si substrates is an important topic for next generation electronic devices. Rapid melt growth (RMG) has the potential to grow defect-free lattice mismatched materials on Si at low cost. Most previous publications have focused on growing binary III–V compounds by RMG, but none have discussed ternary compound materials. In this paper, we demonstrate the RMG of the single crystal ternary compound InGaAs on Si substrates. We discuss two main issues. The first is segregation along the stripe length. An analytical model is developed to describe the segregation of In/Ga in the grown stripe and the model is compared with experimental data. The second issue is the dissolution of the Si seed region during RMG, which leads to formation of Si islands inside the InGaAs stripe. The results of this study are applicable to any compound material in which Si is soluble at the elevated temperatures required for RMG.

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Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

MRS Proceedings ◽

10.1557/opl.2012.1034 ◽

2012 ◽

Vol 1433 ◽

Cited By ~ 2

Author(s):

A. Severino ◽

M. Mauceri ◽

R. Anzalone ◽

A. Canino ◽

N. Piluso ◽

...

Keyword(s):

Growth Parameters ◽

Low Cost ◽

Electronic Devices ◽

Young Modulus ◽

Interesting Property ◽

Large Area ◽

Si Substrates ◽

Application Fields ◽

Sic Films

ABSTRACT3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

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Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118709 ◽

1985 ◽

Vol 43 ◽

pp. 366-367

Author(s):

J.H. Mazur ◽

J. Washburn ◽

T. Henderson ◽

J. Klem ◽

W.T. Masselink ◽

...

Keyword(s):

Cross Sections ◽

Low Cost ◽

Electronic Devices ◽

Compound Semiconductors ◽

View Point ◽

Si Substrate ◽

Antiphase Boundaries ◽

Cross Sectional ◽

Mbe Growth ◽

Si Substrates

Possibility of growth of epitaxial lll-V (GaAs, InP, GaP, etc.) compound semiconductors on nonpolar substrates (Ge,Si) is of considerable interest from the view point of monolithic integration of lll-V optoelectronic and Si electronic devices. The growth of GaAs and AIGaAs layers on Si substrates is additionally attractive because of good mechanical strength and low cost of Si substrates. However, a principal difficulty in growing polar semiconductors on nonpolar substrates is that there are no preferential bonding sites for cations and anions in the first layer of growth, which can result in antiphase boundaries (APB’s) in addition to defects due to misfit (∼4% for GaAs on Si).In this work GaAs layers were grown on (100) Si substrates using procedures described elsewhere. The MBE growth started from a first deposition of As as a prelayer on the Si substrate followed by GaAs growth at 580°C. Cross-sectional TEM specimens were prepared using the same procedures as reported earlier for the case of Si-SiO2 cross-sections.

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Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth

IEEE Electron Device Letters ◽

10.1109/led.2010.2045875 ◽

2010 ◽

Vol 31 (6) ◽

pp. 597-599 ◽

Cited By ~ 5

Author(s):

Shu-Lu Chen ◽

Peter B Griffin ◽

James D Plummer

Keyword(s):

Single Crystal ◽

Melt Growth ◽

Si Substrates ◽

Crystal Gaas

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Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009292x ◽

1976 ◽

Vol 34 ◽

pp. 592-593

Author(s):

Ernest L. Hall ◽

J. B. Vander Sande

Keyword(s):

Mechanical Properties ◽

Single Crystal ◽

Dislocation Structure ◽

Room Temperature ◽

Elevated Temperatures ◽

Strain Curve ◽

Optical Devices ◽

Semiconductor Compound ◽

Wide Range ◽

Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

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Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118692 ◽

1985 ◽

Vol 43 ◽

pp. 364-365

Author(s):

K.M. Hones ◽

P. Sheldon ◽

B.G. Yacobi ◽

A. Mason

Keyword(s):

High Efficiency ◽

Lattice Mismatch ◽

Low Cost ◽

Growth Conditions ◽

Nonradiative Recombination ◽

Device Structure ◽

Si Substrates ◽

Transmission Electron ◽

Dislocation Densities ◽

Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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Aligned single crystal Al-catalyzed boron nanorods on Si substrates

The European Physical Journal B ◽

10.1140/epjb/e2007-00087-5 ◽

2007 ◽

Vol 56 (1) ◽

pp. 35-39 ◽

Cited By ~ 8

Author(s):

Qing Yang ◽

Jian Sha ◽

Lei Wang ◽

Zhizhong Yuan ◽

Deren Yang

Keyword(s):

Single Crystal ◽

Si Substrates

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InSb Czochralski Growth Single Crystals for InGaSb Substrates

MRS Proceedings ◽

10.1557/opl.2014.234 ◽

2014 ◽

Vol 1616 ◽

Author(s):

J. E. Flores Mena ◽

R. Castillo Ojeda ◽

J. Díaz Reyes

Keyword(s):

Low Cost ◽

Electronic Devices ◽

Czochralski Method ◽

Liquid Nitrogen Temperature ◽

Longitudinal Optical ◽

Czochralski Growth ◽

Etch Pit ◽

Growth System ◽

Radiation Sensors ◽

Made In

ABSTRACTThe massive crystal growth of single crystal semiconductors materials has been of fundamental importance for the actual electronic devices industry. As a consequence of this one, we can obtain easily a large variety of low cost devices almost as made ones of silicon. Nowadays, the III-V semiconductors compounds and their alloys have been proved to be very important because of their optical properties and applications. It is the case of the elements In, Ga, As, Sb, which can be utilized for the fabrication of radiation sensors. In this work we present the results obtained from the ingots grown by the Czochralski method, using a growth system made in home. These results include anisotropic chemical attacks in order to reveal the crystallographic orientation and the possible polycrystallinity. Isotropic chemical attacks were made to evaluate the etch pit density. Metallographic pictures of the chemical attacks are presented in this work. Among the results of these measurements, the best samples presented in this work showed mobilities of 62.000 cm2/V*s at room temperature and 99.000 cm2/V*s at liquid nitrogen temperature. Typical pit density was 10,000/cm2. The Raman spectra present two dominant peaks associated at Transversal Optical (TO)- and Longitudinal Optical (LO)-InSb, the first vibrational mode is dominant due to the crystalline direction of the ingots and second one is associated to high defects density.

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