scholarly journals Dielectric Properties, AC Conductivity, and Electric Modulus Analysis of Bulk Ethylcarbazole-Terphenyl

2020 ◽  
Vol 2020 ◽  
pp. 1-8 ◽  
Author(s):  
Hussam Bouaamlat ◽  
Nasr Hadi ◽  
Najat Belghiti ◽  
Hayat Sadki ◽  
Mohammed Naciri Bennani ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Ac Conductivity ◽  
Conduction Mechanism ◽  
Electric Modulus ◽  
X Ray Diffraction ◽  
X Ray ◽  
Universal Power Law ◽  
Electrical And Dielectric Properties ◽  
Increasing Temperature ◽  
Hopping Model

Electrical and dielectric properties for bulk ethylcarbazole-terphenyl (PEcbz-Ter) have been studied over frequency range 1 kHz–2 MHz and temperature range (R.T –120°C). The copolymer PEcbz-Ter was characterised by using X-ray diffraction. The frequency dependence of the dielectric constant (εr′) and dielectric loss (εr″) has been investigated using the complex permittivity. εr′ of the copolymer decreases with increasing frequency and increases with temperature. AC conductivity (σac) data were analysed by the universal power law. The behaviour of σac increases with increasing temperature and frequency. The change of the frequency exponent (s) with temperature was analysed in terms of different conduction mechanisms, and it was found that the correlated barrier-hopping model is the predominant conduction mechanism. The electric modulus was used to analyze the relaxation phenomenon in the material.

scholarly journals Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

2021 ◽  
Author(s):  
Amira Shakra ◽  
M. Fadel ◽  
A.E. Kalila
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Conduction Mechanism ◽  
Charge Carriers ◽  
Amorphous Films ◽  
Thermal Evaporation Method ◽  
Cbh Model ◽  
X Ray ◽  
Electrical And Dielectric Properties ◽  
Quenching Method

Abstract Bulk glassy Se98Te2 and Se96Te2X2 (X = Zn and Cd) were prepared by melting quenching method. Thin films of various thicknesses (200 – 670 nm) were obtained by the thermal evaporation method. The structure of the prepared compositions was investigated by X-ray and EDX analysis. We studied the effect of Zn and Cd addition on the electric and dielectric properties of Se98Te2 thin films. Our measurements were studied in the temperature range (298-323K) below the glass transition temperature and frequency range (100 Hz-1 MHz). DC conductivity showed a single conduction mechanism by hopping of charge carriers at the band edges for the studied system. The dependence of Ac conductivity on frequency is linear with frequency exponent s lies very close to unit and is independent of temperature. This can be explained by the correlated barrier hopping (CBH) model. The dielectric constant ε1 and dielectric loss ε2 noticed to decrease with frequency and increase with temperature. The maximum barrier height Wm was calculated according to Guinitin.

scholarly journals Effect of Fe Substitution on the Structural, Electrical and Dielectric Properties of La0.70Ca0.30MnO3 Cathode for SOFCs

2019 ◽  
Vol 9 (1) ◽  
pp. 324-328
Keyword(s):  
Dielectric Properties ◽  
Single Phase ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Reaction Route ◽  
X Ray ◽  
Suitable Material ◽  
Density Values ◽  
Electrical And Dielectric Properties ◽  
Fe Substitution

Perovskite solid solutions (La0.70Ca0.30)(FexMn1-x)O3 where x = 0.01, 0.20, 0.30 and 0.40 ceramics were synthesized by solid state reaction route. The structural studies were carried by X-Ray diffraction method and the observed results have indicated that all the prepared samples were crystallized into single phase. The surface morphology was studied by Scanning Electron Microscopy and the images have revealed that grain size has increased with the increasing concentration of Fe. Archimedes principle was used to calculate the density of all the sintered samples and the density values were observed to be in increasing order. The impedance and dielectric properties have been characterized at different ranges of temperature and frequency. The value of electrical conductivity were found to be more than 100 S cm-1 , which indicate that the synthesized material is suitable material for cathode of Solid Oxide Fuel Cell.

scholarly journals Effect of Zinc Doping on the Electrical and Dielectric Properties of CCTO Compound Synthesized by Solid-State Method

2021 ◽  
Vol 33 (9) ◽  
pp. 2000-2006
Author(s):  
M. Slaoui ◽  
N. Gouitaa ◽  
Y. El Issmaeli ◽  
A. Harrach ◽  
F. Abdi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray ◽  
Zn Concentration ◽  
Zinc Doping ◽  
Electrical And Dielectric Properties

In this work, the influence of zinc doping on structural and dielectric properties of CaCu(3-x)ZnxTi4O12 (CCZxTO with x = 0, 2.5, 5, 7.5, 10, 12.5 and 15%) ceramics sintered at 1000 ºC for 8 h was studied. The ceramic samples were prepared by the conventional solid-state and calcined at 1050 ºC for 4 h. The X-ray diffraction (XRD) analysis of pure and Zn-doped CCTO were analyzed by using Rietveld refinement with cubic CCTO phase with no trace impurity phase. The scanning electron microscopy (SEM) investigation showed that for Zn-doped CCTO, the grains distributions were homogenous with average sizes which decreased with increasing of Zn concentration. The dielectric permittivity as function of temperature showed two dielectric anomalies (weakly and strong) and the dielectric constant value largely decreased for x = 2.5%, which is about tree magnitude smaller than the pure ceramic. Then it increased and reached a maximum at x = 10%, which is larger than the value of pure ceramic. And for x > 10%, the dielectric constant decreased for about two magnitude smaller than the ceramic at x = 10%. The cole-cole diagramm for all the samples showed existence of two semi-arcs attributed to the grains and grains boundaries. It was found that the Rg values were much smaller than the Rgb value. This give an evidance on the formation of interior barrier layer capacity (IBLC).

Ac Conductivity and Dielectric Properties of Hexanoyl Chitosan-LiClO4-TiO2 Composite Polymer Electrolytes

2011 ◽  
Vol 335-336 ◽  
pp. 873-880 ◽  
Author(s):  
Tan Winie ◽  
Chin Han Chan ◽  
Ri Hanum Yahaya Subban
Keyword(s):  
Dielectric Properties ◽  
Ac Conductivity ◽  
Composite Electrolyte ◽  
Composite Polymer Electrolytes ◽  
Barrier Heights ◽  
Increase With Increase ◽  
Hexanoyl Chitosan ◽  
Universal Power Law ◽  
Solution Cast ◽  
Increasing Temperature

Hexanoyl chitosan: LiClO4: TiO2composite electrolyte films were prepared by the solution cast technique. The ac conductivity and dielectric properties of the samples prepared have been studied in the frequency range from 100 Hz to 1 MHz over the temperature range from 273 to 333 K. The exponent s in the Jonscher’s universal power law, σ(ω)=σdc+Aωswas analyzed as a function of temperature and the analysis suggests that the conduction mechanism can be interpreted based on the correlated barrier hopping (CBH) model. The barrier heights, WMwere calculated. The values of WMare found to decrease with increasing temperature in the same manner as the exponent s. Both dielectric constant and dielectric loss decrease with increase in frequency and increase with increase in temperature.

scholarly journals Ferroelectric and Dielectric Properties of Strontium Titanate Doped with Barium

Magnetism ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 22-36
Author(s):  
Ahmed Maher Henaish ◽  
Maha Mostafa ◽  
Ilya Weinstein ◽  
Osama Hemeda ◽  
Basant Salem
Keyword(s):  
Dielectric Properties ◽  
Temperature Dependence ◽  
Hysteresis Loops ◽  
X Ray Diffraction ◽  
Precursor Method ◽  
Xrd Pattern ◽  
X Ray ◽  
Polarization Electric Field ◽  
Increasing Temperature ◽  
Tio2 Phase

Ferroelectric samples Sr1−xBaxTiO3 (BST), where x = 0, 0.2, 0.4, 0.6, 0.8 and 1, were prepared using the tartrate precursor method and annealed at 1200 °C for 2 h. X-ray diffraction, “XRD”, pattern analysis verified the structure phase. The crystallite size of the SrTiO3 phase was calculated to be 83.6 nm, and for the TiO2 phase it was 72.25 nm. The TEM images showed that the crystallites were agglomerated, due to their nanosize nature. The AC resistivity was measured as temperature dependence with different frequencies 1 kHz and 10 kHz. The resistivity was decreased by raising the frequency. The dielectric properties were measured as the temperature dependence at two frequencies, 1 kHz and 10 kHz. The maximum amount of dielectric constant corresponded to the Curie temperature and the transformation from ferroelectric to paraelectric at 1 kHz was sharp at 10 kHz. Polarization–electric field hysteresis loops for BST samples were measured using a Sawer–Tawer modified circuit. It was shown that the polarization decreased with increasing temperature for all samples.

scholarly journals Study of the influence of 2.5% Mg2+ insertion in the B-site of La0.8Ca0.1Pb0.1FeO3 on its structural, electrical and dielectric properties

RSC Advances ◽  
2021 ◽  
Vol 11 (52) ◽  
pp. 33070-33080
Author(s):  
H. Issaoui ◽  
A. Benali ◽  
F. Issaoui ◽  
E. Dhahri ◽  
B. F. O. Costa ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Impedance Spectroscopy ◽  
Physical Properties ◽  
Complex Impedance ◽  
Experimental Techniques ◽  
Complex Impedance Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical And Dielectric Properties

This work involves the synthesis and study of physical properties of the La0.8Ca0.1Pb0.1Fe0.975Mg0.025O3 compound, which has been characterized by various experimental techniques, such as X-ray diffraction, SEM and complex impedance spectroscopy.

AC CONDUCTIVITY AND DIELECTRIC STUDIES ON Sr0.6Na0.2Nd0.2Bi4Ti4O15 CERAMIC

2008 ◽  
Vol 22 (10) ◽  
pp. 775-783 ◽  
Author(s):  
RIZWANA ◽  
T. RADHA KRISHNA ◽  
P. SARAH
Keyword(s):  
Diffraction Data ◽  
Mixed Oxide ◽  
High Frequency ◽  
Ac Conductivity ◽  
Conduction Mechanism ◽  
Temperature Dependency ◽  
Dielectric Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures

Sr 0.6 Na 0.2 Nd 0.2 Bi 4 Ti 4 O 15 ceramic is prepared by mixed oxide method. Lattice parameters for this ceramic are calculated from the X-ray diffraction data. Dielectric studies as a function of temperature and frequency are done. To understand the process of conduction involved in the material prepared, frequency and temperature dependency of AC conductivity studies are carried out. The two-term power relation is used to characterize the frequency dependence of AC conductivity. The parameters s1, s2 (low and high frequency slopes) are calculated from the AC conductivity plots at different temperatures to get more information about the conduction mechanism. Conduction is explained based on hopping mechanism occuring via polarons.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

Polydomain Structure of Epitaxial PbTiO3 films on MgO

1997 ◽  
Vol 493 ◽  
Author(s):  
S. P. Alpay ◽  
A. S. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
A. L. Roytburd ◽  
...  
Keyword(s):  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Theoretical Predictions ◽  
The Stability ◽  
Increasing Temperature ◽  
Stable Domains ◽  
Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

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