scholarly journals Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

2021 ◽  
Author(s):  
Amira Shakra ◽  
M. Fadel ◽  
A.E. Kalila
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Conduction Mechanism ◽  
Charge Carriers ◽  
Amorphous Films ◽  
Thermal Evaporation Method ◽  
Cbh Model ◽  
X Ray ◽  
Electrical And Dielectric Properties ◽  
Quenching Method

Abstract Bulk glassy Se98Te2 and Se96Te2X2 (X = Zn and Cd) were prepared by melting quenching method. Thin films of various thicknesses (200 – 670 nm) were obtained by the thermal evaporation method. The structure of the prepared compositions was investigated by X-ray and EDX analysis. We studied the effect of Zn and Cd addition on the electric and dielectric properties of Se98Te2 thin films. Our measurements were studied in the temperature range (298-323K) below the glass transition temperature and frequency range (100 Hz-1 MHz). DC conductivity showed a single conduction mechanism by hopping of charge carriers at the band edges for the studied system. The dependence of Ac conductivity on frequency is linear with frequency exponent s lies very close to unit and is independent of temperature. This can be explained by the correlated barrier hopping (CBH) model. The dielectric constant ε1 and dielectric loss ε2 noticed to decrease with frequency and increase with temperature. The maximum barrier height Wm was calculated according to Guinitin.

scholarly journals Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

RSC Advances ◽  
2020 ◽  
Vol 10 (16) ◽  
pp. 9549-9562 ◽  
Author(s):  
J. Koaib ◽  
N. Bouguila ◽  
H. Abassi ◽  
N. Moutia ◽  
M. Kraini ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Conduction Mechanism ◽  
Annealing Temperature ◽  
Electrical And Dielectric Properties

The annealing temperature (Ta) dependence of the structural, morphological, electrical and dielectric properties of ZnS thin films was investigated.

scholarly journals Dielectric Properties, AC Conductivity, and Electric Modulus Analysis of Bulk Ethylcarbazole-Terphenyl

2020 ◽  
Vol 2020 ◽  
pp. 1-8 ◽  
Author(s):  
Hussam Bouaamlat ◽  
Nasr Hadi ◽  
Najat Belghiti ◽  
Hayat Sadki ◽  
Mohammed Naciri Bennani ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Ac Conductivity ◽  
Conduction Mechanism ◽  
Electric Modulus ◽  
X Ray Diffraction ◽  
X Ray ◽  
Universal Power Law ◽  
Electrical And Dielectric Properties ◽  
Increasing Temperature ◽  
Hopping Model

Electrical and dielectric properties for bulk ethylcarbazole-terphenyl (PEcbz-Ter) have been studied over frequency range 1 kHz–2 MHz and temperature range (R.T –120°C). The copolymer PEcbz-Ter was characterised by using X-ray diffraction. The frequency dependence of the dielectric constant (εr′) and dielectric loss (εr″) has been investigated using the complex permittivity. εr′ of the copolymer decreases with increasing frequency and increases with temperature. AC conductivity (σac) data were analysed by the universal power law. The behaviour of σac increases with increasing temperature and frequency. The change of the frequency exponent (s) with temperature was analysed in terms of different conduction mechanisms, and it was found that the correlated barrier-hopping model is the predominant conduction mechanism. The electric modulus was used to analyze the relaxation phenomenon in the material.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

A Study of the Diffusion of Phosphorus in Ni/amorphous NiPx and a-NiPx/a-NiPy. Multilayers

1990 ◽  
Vol 205 ◽  
Author(s):  
C. A. Ross ◽  
L. M. Goldman ◽  
J. A. Barnard ◽  
F. Spaepen
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Multilayer Thin Films ◽  
Amorphous Films ◽  
Phosphorus Diffusion ◽  
X Ray ◽  
A Value ◽  
Crystalline Films

AbstractAn x-ray technique has been used to measure the diffusion of phosphorus in crystalline Ni/amorphous NiPx and amorphous NiPx/NiPy multilayer thin films produced by electrodeposition. The films have repeat lengths in the range 30–80Å and P contents x, y < 25at.%. A value for the interdiffusivity in amorphous NiPx is derived from measurements on fully amorphous films. The behaviour of partially crystalline films is described in terms of phosphorus diffusion into the nickel grain boundaries.

Formation and Characteristics of Thin Films of ZrO2-8 mol % Y2O3 Solid Electrolytes

2004 ◽  
Vol 97-98 ◽  
pp. 153-158 ◽  
Author(s):  
Darius Milčius ◽  
L.L. Pranevičius ◽  
V. Širvinskaitė ◽  
T. Šalkus ◽  
A. Kežionis ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Electrolytes ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Cubic Symmetry ◽  
X Ray ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering ◽  
Diffraction Patterns

Thin films of ZrO2-8mol%Y2O3 have been deposed by pulsed DC magnetron sputtering method. The substrates of Ni-cermet and alloy-600 for the films were used. The results of the investigation of the X-ray diffraction patterns and SEM showed that the films are nanocrystalline and belong to cubic symmetry. The relaxation process is related to the ion transport in thin films. The results of the investigation of the temperature dependencies of thin films ionic conductivity (σ) showed that the dependence σ(T) is caused by the temperature dependence of oxygen vacancy mobility, while the number of charge carriers remains constant with temperature.

INVESTIGATING ANNEALING EFFECT ON OPTICAL PROPERTIES OF Cd0.8Zn0.2S THIN FILMS

2014 ◽  
Vol 21 (05) ◽  
pp. 1450073 ◽  
Author(s):  
SOMAYEH AZIZI ◽  
HAMID REZAGHOLIPOUR DIZAJI ◽  
MOHAMMAD HOSSEIN EHSANI ◽  
SEYED FEYZOLAH GHAVAMI MIRMAHALLE
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Annealing Effect ◽  
Thin Layers ◽  
Optical Parameters ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Cd 0.8 Zn 0.2 S thin films deposited on glass substrates by thermal evaporation method were annealed at different temperatures for the first time in order to investigate annealing effect on optical properties. The compositional, structural of nanoparticles precursor synthesized using microwave irradiation method and optical properties of the films were studied using energy dispersive X-ray (EDX), X-ray diffraction, transmission electron microscopy (TEM), and UV-visible spectrophotometer techniques. The annealed films were found to have hexagonal Wurtzite structure with strong preferential orientation along the (002) diffraction peak. Important optical parameters such as extinction coefficient and refractive index revealed the effect of heat treatment on the deposited thin layers. A reduction in the band gap energy from 2.41 eV to 2.29 eV was observed for the annealed samples.

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