scholarly journals A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications

2018 ◽  
Vol 8 (5) ◽  
pp. 3882
Author(s):  
Amine Rachakh ◽  
Larbi El Abdellaoui ◽  
Jamal Zbitou ◽  
Ahmed Errkik ◽  
Abdelali Tajmouati ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Return Loss ◽  
Maximum Output Power ◽  
Maximum Power ◽  
Design System ◽  
Stability Factor ◽  
Maximum Output ◽  
Power Gain ◽  
Microstrip Technology

Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm2.

A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Premmilaah Gunasegaran ◽  
Jagadheswaran Rajendran ◽  
Selvakumar Mariappan ◽  
Yusman Mohd Yusof ◽  
Zulfiqar Ali Abdul Aziz ◽  
...  
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Power Amplifier ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Power Gain ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Main Amplifier

Purpose The purpose of this paper is to introduce a new linearization technique known as the passive linearizer technique which does not affect the power added efficiency (PAE) while maintaining a power gain of more than 20 dB for complementary metal oxide semiconductor (CMOS) power amplifier (PA). Design/methodology/approach The linearization mechanism is executed with an aid of a passive linearizer implemented at the gate of the main amplifier to minimize the effect of Cgs capacitance through the generation of opposite phase response at the main amplifier. The inductor-less output matching network presents an almost lossless output matching network which contributes to high gain, PAE and output power. The linearity performance is improved without the penalty of power consumption, power gain and stability. Findings With this topology, the PA delivers more than 20 dB gain for the Bluetooth Low Energy (BLE) Band from 2.4 GHz to 2.5 GHz with a supply headroom of 1.8 V. At the center frequency of 2.45 GHz, the PA exhibits a gain of 23.3 dB with corresponding peak PAE of 40.11% at a maximum output power of 14.3 dBm. At a maximum linear output power of 12.7 dBm, a PAE of 37.3% has been achieved with a peak third order intermodulation product of 28.04 dBm with a power consumption of 50.58 mW. This corresponds to ACLR of – 20 dBc, thus qualifying the PA to operate for BLE operation. Practical implications The proposed technique is able to boost up the efficiency and output power, as well as linearize the PA closer to 1 dB compression point. This reduces the trade-off between linear output power and PAE in CMOS PA design. Originality/value The proposed CMOS PA can be integrated comfortably to a BLE transmitter, allowing it to reduce the transceiver’s overall power consumption.

Design of a 0.7~2.6GHz Wideband Power Amplifier in 0.18-μm CMOS Process

2014 ◽  
Vol 618 ◽  
pp. 543-547
Author(s):  
Zhou Yu ◽  
Xiang Ning Fan ◽  
Zai Jun Hua ◽  
Chen Xu
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Negative Feedback ◽  
Maximum Output Power ◽  
Cmos Process ◽  
Maximum Output ◽  
Power Gain ◽  
Class A ◽  
Simulation Results ◽  
Multi Mode

A power amplifier (PA) for multi-mode multi-standard transceiver which is implemented in a TSMC 0.18μm process is presented. The proposed PA uses matching compensation, lossy matching network and negative feedback technique to improve bandwidth. To achieve the linearity performance, the two-stage PA operates in Class-A regime. Simulation results show that the power amplifier achieves maximum output power of more than 24dBm in 0.7~2.6GHz. The output P1dBof the PA is larger than 22dBm. The simulated power gain is more than 27dB. The S11 is less than-10dB and the S22 is under-5dB.

scholarly journals Pengaruh Algoritma Peturb & Observe pada Irradiance, Suhu dan Beban Bervariasi

AVITEC ◽  
2019 ◽  
Vol 1 (1) ◽  
Author(s):  
Ernando Rizki Dalimunthe
Keyword(s):  
Output Power ◽  
Maximum Output Power ◽  
Maximum Power ◽  
Maximum Output ◽  
Average Output ◽  
Point Tracking ◽  
Power Simulation ◽  
Power Point Tracking ◽  
Duty Cycles ◽  
Power Point

Optimizing the output power value of a solar cell requires a tracker. The tracking is called the maximum power point tracking (MPPT) which will produce a maximum output power value. Each component in this system is modeled into Simulink. This simulation is designed to optimize the work of solar cells by searching maximum power points using perturb and observe (P & O) algorithms, then duty cycles are output  of the algorithms become Buck-Boost Converter inputs as switching so they can produce output power with better output  power. Simulation results show that MPPT can increase the average output power on changes in the value of sun irradiation, temperature and load than systems that do not use MPPT. The factor of the average difference in power is 37.82%.

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates

2007 ◽  
Vol 556-557 ◽  
pp. 763-766 ◽  
Author(s):  
Jeong Hyuk Yim ◽  
Ho Keun Song ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
Jong Ho Lee ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
High Purity ◽  
Maximum Output Power ◽  
Drain Current ◽  
Maximum Output ◽  
Power Gain ◽  
Si Substrates ◽  
Class A ◽  
Current Instability

Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

Concurrent dual-band SiGe HBT power amplifier for Wireless applications

2009 ◽  
Vol 1 (2) ◽  
pp. 117-126 ◽  
Author(s):  
Vittorio Camarchia ◽  
Rocco Giofrè ◽  
Iacopo Magrini ◽  
Luca Piazzon ◽  
Alessandro Cidronali ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Orthogonal Frequency Division Multiplexing ◽  
Maximum Output Power ◽  
System Level ◽  
Dual Band ◽  
Maximum Output ◽  
System Architectures ◽  
Power Added Efficiency ◽  
Mode Operation

This paper presents an investigation of a concurrent low-cost dual-band power amplifier (PA) fabricated in SiGe technology, able to simultaneously operate at two frequencies of 2.45 and 3.5-GHz, including an evaluation of its system level performance potentiality. Taking into account the technology novelty and the lack of device characterization and modeling, a hybrid (MIC) approach has been adopted both for a fast prototyping of the PA and for the evaluation of the device potentiality based on an extensive linear and nonlinear characterization. The comparison of PA performance in single-band or concurrent mode operation will be presented. In particular, the measured PA prototype shows an output power of 17.2 and 17-dBm at a 1-dB compression point, at 2.45 and 3.5-GHz, respectively, for CW single-mode operation, with a power added efficiency around 20%. System-level analysis predicts that, when the PA is operated under the 20-MHz Orthogonal Frequency-Division Multiplexing (OFDM) concurrent signals, the maximum output power levels to maintain the Error Vector Magnitude (EVM) within 5% are 11 and 3.5-dBm at 2.45 and 3.5-GHz, respectively. Moreover, new concepts and possible new system architectures for the development of the next generation of the multi-band transceiver front-end will be provided with an extensive system-level evaluation of the amplifier.

scholarly journals Implementasi MPPT Panel Surya Berbasis Algoritma Perturbasi & Observasi (PO) Menggunakan Arduino

2021 ◽  
Vol 2 (2) ◽  
pp. 162-167
Author(s):  
Haris Masrepol ◽  
Muldi Yuhendri
Keyword(s):  
Control System ◽  
Output Power ◽  
Output Voltage ◽  
Maximum Output Power ◽  
Buck Converter ◽  
Maximum Power ◽  
Maximum Output ◽  
Solar Panels ◽  
Maximum Power Point ◽  
Power Point

Solar panels are a renewable energy power plant that uses sunlight as its main energy source. The power generated by solar panels are determined by the size of the solar panels, solar radiation and temperature. The power of the solar panels is also determined by the output voltage of the solar panels. To get the maximum output power at any time, it is necessary to adjust the output voltage of the solar panel. This study proposes controlling the maximum output power of solar panels, also known as maximum power point tracking (MPPT) by adjusting the output voltage of the solar panels using a buck converter. The buck converter output voltage regulation at the maximum power point of the solar panel is designed with the Perturbation and Observation (PO) algorithm which is implemented using an Arduino Mega 2560. This MPPT control system is applied to 4x50 Watt-Peak (WP) solar panels which are connected in parallel. The experimental results show that the proposed MPPT control system with the PO algorithm has worked well as expected. This can be seen from the output power generated by the solar panels already around the maximum power point at any change in solar radiation and temperature.

A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission

2018 ◽  
Vol 3 (2) ◽  
Author(s):  
Chang-Hsi Wu ◽  
Hong-Cheng You ◽  
Shun-Zhao Huang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Power Efficiency ◽  
Supply Voltage ◽  
Maximum Output Power ◽  
Dual Band ◽  
Maximum Output ◽  
Power Combiner ◽  
Power Added Efficiency ◽  
Chip Size

Abstract An architecture of 5.2/5.8-GHz dual-band on-off keying (DBOOK) modulated transmitter is designed in a 0.18-μm CMOS technology. The proposed DBOOK transmitter is used in the biosignal transmission system with high power efficiency and small area. To reduce power consumption and enhance output swing, two pairs of center-tapped transformers are used as both LC tank and source grounding choke for the designed voltage controlled oscillator (VCO). Switching capacitances are used to achieve dual band operations, and a complemented power combiner is used to merge the differential output power of VCO to a single-ended output. Besides, the linearizer circuits are used in the proposed power amplifier with wideband output matching to improve the linearity both at 5.2/5.8-GHz bands. The designed DBOOK transmitter is implemented by dividing it into two chips. One chip implements the dual-band switching VCO and power combiner, and the other chip implements a linear power amplifier including dual-band operation. The first chip drives an output power of 2.2mW with consuming power of 5.13 mW from 1.1 V supply voltage. With the chip size including pad of 0.61 × 0.91 m2, the measured data rate and transmission efficiency attained are 100 Mb/s and 51 pJ/bit, respectively. The second chip, for power enhanced mode, exhibits P1 dB of −9 dBm, IIP3 of 1 dBm, the output power 1 dB compression point of 12.42 dBm, OIP3 of about 21 dBm, maximum output power of 17.02/16.18 dBm, and power added efficiency of 17.13/16.95% for 5.2/ 5.8 GHz. The chip size including pads is 0:693 × 1:084mm2.

RF-MEMS multi-mode-matching networks for GaN power transistors

2014 ◽  
Vol 6 (5) ◽  
pp. 447-458 ◽  
Author(s):  
Sascha A. Figur ◽  
Friedbert van Raay ◽  
Rüdiger Quay ◽  
Larissa Vietzorreck ◽  
Volker Ziegler
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Rf Mems ◽  
Operation Mode ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Mode Matching ◽  
Power Added Efficiency ◽  
Matching Networks ◽  
Multi Mode

This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are finally combined into a multi-mode-matching network (M3N); the M3N allows to tune the operation mode of the transistor independently of its operational frequency. The matching networks are designed to provide optimum matching for the power amplifier at three to six different operating frequencies for maximum-output-power- and maximum-PAE-mode. In the frequency range from 3.5 to 8.5 GHz, return losses of 10 dB and higher were measured and insertion losses of 0.5–1.9 dB were demonstrated for the output-matching networks. Further characterizations were performed to test the dependency on the RF-input power, and no changes were observed up to power levels of 34 dBm when cold-switched.

Modified Fuzzy Logic MPPT for PV System under Severe Climatic Profiles

2021 ◽  
Vol 4 (2) ◽  
pp. 49-55
Author(s):  
Rao Muhammad Asif ◽  
Muhammad Abu Bakar Siddique ◽  
Ateeq Ur Rehman ◽  
Muhammad Tariq Sadiq ◽  
Adeel Asad
Keyword(s):  
Fuzzy Logic ◽  
Output Power ◽  
Fuzzy Logic Controller ◽  
Maximum Output Power ◽  
Management Control ◽  
Maximum Power ◽  
Effective Control ◽  
Maximum Output ◽  
Pv System ◽  
Battery Bank

Photovoltaic energy is considered highly favorable due to the environment's pleasant nature. After analyzing different maximum power point tracking (MPPT) algorithms, an effective control scheme is proposed to obtain stabilized maximum output power throughout the PV system. Therefore, this article presents an efficient control algorithm for the extraction of maximum power through a PV system under severe climatic drifts. The modified fuzzy logic controller sustains the maximum output power of the system by defining fuzzy rules to control the duty cycle appropriately. A DC-DC boost converter is also modeled to stabilize and maintain output power under variant climatic uncertainties. Furthermore, charging management control is also implemented on lead-acid battery bank to store PV energy for backup usage. It defines charging-discharging time and state of charge for keeping the battery bank healthier.

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