scholarly journals PLL-based nanoresonator driving IC with automatic parasitic capacitance cancellation and automatic gain control

2021 ◽  
pp. 002029402110293
Author(s):  
Hyunwoo Heo ◽  
Hyungseup Kim ◽  
Donggeun You ◽  
Yongsu Kwon ◽  
Yil-suk Yang ◽  
...  

This paper presents a phase-locked loop (PLL) based resonator driving integrated circuit (IC) with automatic parasitic capacitance cancellation and automatic gain control. The PLL consisting of a phase frequency detector (PFD), a loop filter, and a voltage-controlled oscillator (VCO) makes the driving frequency to be locked at the resonant frequency. The resonator is modeled by Butterworth–Van Dyke equivalent circuit model with motional resistance of 72.8 kΩ, capacitance of 6.19 fF, inductance of 79.4 mH, and parasitic parallel capacitance of 2.59 pF. To mitigate the magnitude and phase distortion in the resonator frequency response, it is necessary to compensate for the parasitic capacitance. The proposed automatic parasitic capacitance cancellation loop is operated in the open-loop mode. In the automatic parasitic capacitance cancellation phase, the outputs of the transimpedance amplifier (TIA) at the lower and higher frequency than the resonant frequency (VH and VL), are compared, and the programmable compensation capacitor array matches the VH and VL using binary-searched algorithm to cancel the parallel parasitic capacitance. The automatic gain control (AGC) loop keeps the oscillation at the suitable amplitude, and the AGC output can be used as a measurement of the motional resistance. The AGC loop is also digitally controlled. The proposed resonator driving IC is designed in a 0.18-μm bipolar complementary metal oxide semiconductor double-diffused metal oxide semiconductor (BCDMOS) process with an active area of 3.2 mm2. The simulated phase noise is −61.1 dBc/Hz at 1 kHz and the quality factor ( Q-factor) is 59,590.

Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.


Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...


Sign in / Sign up

Export Citation Format

Share Document