Etching for LSI : Manufacturing Technologies in Semiconductor Device

1986 ◽  
Vol 89 (809) ◽  
pp. 382-389
Author(s):  
Yukinori KUROGI
Keyword(s):  
Semiconductor Device ◽  
Manufacturing Technologies

Small Via High Aspect Ratio Circuit Edit: Challenges, Techniques and Developments

2003 ◽  
Author(s):  
Valery Ray ◽  
Nicholas Antoniou ◽  
Ravi Balasubramanian ◽  
Neil Bassom ◽  
Marie Clabby ◽  
...  
Keyword(s):  
System Performance ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Limiting Factors ◽  
Placement Stability ◽  
Process Technology ◽  
The Past ◽  
Deposition Processes ◽  
Manufacturing Technologies

Abstract As semiconductor device manufacturing technologies move below the 100 nm node constrains on using Focused Ion Beam (FIB) systems to perform circuit edit operations tighten dramatically. Phenomena associated with via milling and deposition processes, considered minor side effects in the past, may become performance-limiting factors. Obstacles, associated with editing deep sub micron technologies beyond 100nm node, which include navigational accuracy, beam placement stability, and small via milling and filling processes, cannot be completely overcome without advances in overall FIB system performance and operation. We present a detailed technical overview of the challenges, associated with silicon microsurgery on devices, manufactured with sub 100 nm process technology and describe recent advancements in FIB technology and techniques which address these areas and allow successful modification of today’s most advanced designs.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Sign in / Sign up

Export Citation Format

Share Document