scholarly journals LoRa Alliance Certification

2021 ◽  
Author(s):  
Derek Hunt
Keyword(s):  
Support Costs ◽  
Rf Performance

LoRaWAN® Certification of devices is critical for effective and efficient mass deployment of LoRaWAN Networks, as it ensures devices will work on any network, under all conditions. Certified Devices significantly reduce the support costs as any product failures detected later when the device is deployed is far more expensive to repair and poor RF performance of the device increase number of gateways needed and cost of the network infostructure.

Architecture of a distributed system for processing heterogeneous data from social networks

2020 ◽  
Vol 4 ◽  
pp. 97-100
Author(s):  
A.P. Pronichev ◽  
Keyword(s):  
Social Networks ◽  
Data Analysis ◽  
Distributed System ◽  
Heterogeneous Data ◽  
Analysis Process ◽  
Support Costs

The article discusses the architecture of a system for collecting and analyzing heterogeneous data from social networks. This architecture is a distributed system of subsystem modules, each of which is responsible for a separate task. The system also allows you to use external systems for data analysis, providing the necessary interface abstraction for connection. This allows for more flexible customization of the data analysis process and reduces development, implementation and support costs.

VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ

2004 ◽  
Vol 14 (03) ◽  
pp. 625-631 ◽  
Author(s):  
J. W. LAI ◽  
W. HAFEZ ◽  
M. FENG
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Impact Ionization ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Vertical Scaling ◽  
Physical Parameters ◽  
Type I ◽  
Peak Current Density ◽  
Rf Performance

We have fabricated the high-speed InP/InGaAs -based single heterojunction bipolar transistors (SHBTs) with current gain cutoff frequency, fT from 166GHz to over 500GHz by the approach of vertical scaling. Collector thickness is reduced from 3000Å to 750Å and the peak current density is increased up to 1300kA/cm2. In this paper, device rf performance has been compared with respect to materials with different vertical dimensions. The scaling limitation is also studied by analytical approach. The extracted physical parameters suggest that the parasitic emitter resistance is the major limit on further enhancing ultra-scaled HBT intrinsic speed due to the associated RECBC delay. The cut-off frequency of a 500Å collector SHBT has been measured and the results indicate a dramatic drop on fT, supporting the conclusion projected by model analysis. It is also commented that for deeply downscaled HBTs, impact ionization could be another degrading mechanism limits device bandwidth.

Improvement of SOI MOSFET RF Performance by Implant Optimization

2010 ◽  
Vol 20 (5) ◽  
pp. 271-273 ◽  
Author(s):  
C. L. Chen ◽  
J. M. Knecht ◽  
J. Kedzierski ◽  
C. K. Chen ◽  
P. M. Gouker ◽  
...  
Keyword(s):  
Soi Mosfet ◽  
Rf Performance

scholarly journals Modelling and simulation of functional product system availability and support costs

2012 ◽  
Vol 16 (3/4) ◽  
pp. 304 ◽  
Author(s):  
Magnus Löfstrand ◽  
Sean Reed ◽  
Magnus Karlberg ◽  
John Andrews ◽  
Lennart Karlsson ◽  
...  
Keyword(s):  
Modelling And Simulation ◽  
Product System ◽  
System Availability ◽  
Support Costs ◽  
Functional Product
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