scholarly journals The Effect of Cu Ohmic Contact on Photoelectrochemical Property of S-CuO Thin Film Photocathodes

2019 ◽  
Vol 22 (6) ◽  
pp. 256-262 ◽  
Author(s):  
Aziz Amrullah ◽  
Gunawan Gunawan ◽  
Nor Basid Adiwibawa Prasetya
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Ohmic Contact ◽  
Photoelectrochemical Properties ◽  
Photoelectrochemical Property ◽  
Onset Potential ◽  
Best Response ◽  
Cyclic Voltammetry Method ◽  
The Stability ◽  
A Current

The development of semiconductor materials as photocathodes that have excellent performance is significant for the photoelectrochemical reaction of hydrogen evolution. The thin film of sulfur-doped Copper (II) oxide (S-CuO)  was successfully synthesized using the cyclic voltammetry method. Investigation of photoelectrochemical properties of S-CuO photocathodes, including current density, onset potential, applied photon to current efficiency (ABPE), and bandgap had been carried out. It was reported that the Cu ohmic contact affected the photoelectrochemical properties and the stability of the thin film. The presence of Cu ohmic contact can improve the performance of S-CuO thin film photocathodes. The S-CuO TU 20 mM thin film has the best response with a current density of -0.923 mA/cm2, an onset potential of 0.59 V, and ABPE of 0.21%. Stability occurred at pH 7 in 0.2M NaH2PO4. The optical analysis showed S-CuO TU 20 mM bandgap of 1.7 eV.

scholarly journals The Effect of Cu Ohmic Contact on Photoelectrochemical Property of S-CuO Thin Film Photocathodes

2019 ◽  
Vol 22 (6) ◽  
pp. 255-262
Author(s):  
Aziz Amrullah ◽  
Gunawan Gunawan ◽  
Nor Basid Adiwibawa Prasetya
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Ohmic Contact ◽  
Photoelectrochemical Properties ◽  
Photoelectrochemical Property ◽  
Onset Potential ◽  
Best Response ◽  
Cyclic Voltammetry Method ◽  
The Stability ◽  
A Current

The development of semiconductor materials as photocathodes that have excellent performance is significant for the photoelectrochemical reaction of hydrogen evolution. The thin film of sulfur-doped Copper (II) oxide (S-CuO)  was successfully synthesized using the cyclic voltammetry method. Investigation of photoelectrochemical properties of S-CuO photocathodes, including current density, onset potential, applied photon to current efficiency (ABPE), and bandgap had been carried out. It was reported that the Cu ohmic contact affected the photoelectrochemical properties and the stability of the thin film. The presence of Cu ohmic contact can improve the performance of S-CuO thin film photocathodes. The S-CuO TU 20 mM thin film has the best response with a current density of -0.923 mA/cm2, an onset potential of 0.59 V, and ABPE of 0.21%. Stability occurred at pH 7 in 0.2M NaH2PO4. The optical analysis showed S-CuO TU 20 mM bandgap of 1.7 eV.

scholarly journals Superior FexN electrocatalyst derived from 1,1′-diacetylferrocene for oxygen reduction reaction in alkaline and acidic media

2020 ◽  
Vol 9 (1) ◽  
pp. 843-852
Author(s):  
Hunan Jiang ◽  
Jinyang Li ◽  
Mengni Liang ◽  
Hanpeng Deng ◽  
Zuowan Zhou
Keyword(s):  
Oxygen Reduction Reaction ◽  
Oxygen Reduction ◽  
Current Density ◽  
Active Sites ◽  
Reduction Reaction ◽  
Alkaline Media ◽  
Acidic Media ◽  
Onset Potential ◽  
Acidic And Alkaline Media ◽  
The Stability

AbstractAlthough Fe–N/C catalysts have received increasing attention in recent years for oxygen reduction reaction (ORR), it is still challenging to precisely control the active sites during the preparation. Herein, we report FexN@RGO catalysts with the size of 2–6 nm derived from the pyrolysis of graphene oxide and 1,1′-diacetylferrocene as C and Fe precursors under the NH3/Ar atmosphere as N source. The 1,1′-diacetylferrocene transforms to Fe3O4 at 600°C and transforms to Fe3N and Fe2N at 700°C and 800°C, respectively. The as-prepared FexN@RGO catalysts exhibited superior electrocatalytic activities in acidic and alkaline media compared with the commercial 10% Pt/C, in terms of electrochemical surface area, onset potential, half-wave potential, number of electrons transferred, kinetic current density, and exchange current density. In addition, the stability of FGN-8 also outperformed commercial 10% Pt/C after 10000 cycles, which demonstrates the as-prepared FexN@RGO as durable and active ORR catalysts in acidic media.

scholarly journals Electro-Optical Performance of Organic Thin-Film Using HAT(CN)6 between Anode and Organic Materials

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 648 ◽  
Author(s):  
Hong-Gyu Park ◽  
Sang-Geon Park
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Current Density ◽  
Carrier Transport ◽  
Hole Injection ◽  
Driving Voltage ◽  
Organic Thin Film ◽  
20 Nm ◽  
Injection Barrier ◽  
A Current

We report the electro-optical properties of an organic thin-film by varying the thickness of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT(CN)6), included therein as an interlayer. Devices with HAT(CN)6, which are 7 nm thin films used as interlayers, exhibited good current density–voltage characteristics due to an improved hole injection barrier resulting from carrier ladder effects and carrier transport phenomena. The device without an interlayer showed the worst driving voltage characteristics due to the hole injection barrier. At low driving voltages, a device using 7 nm HAT(CN)6 as an interlayer exhibited a current density about 9.9 times higher than that of a device using 20 nm HAT(CN)6, and showed a current density about 9600 times higher than that of a device without an interlayer. Due to the proper carrier balance, the device using 7 nm HAT(CN)6 as an interlayer achieved a maximum current efficiency of 10.8 cd/A, which was the highest among the devices studied. This shows that the electro-optical properties of devices using HAT(CN)6 as an interlayer are dominated by the holes.

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs

1992 ◽  
Vol 262 ◽  
Author(s):  
F. Ren ◽  
T. R. Fullowan ◽  
J. R. Lothian ◽  
P. W. Wisk ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Current Gain ◽  
Rapid Degradation ◽  
Enhanced Diffusion ◽  
Aging Conditions ◽  
The Stability ◽  
Dc Current ◽  
A Current ◽  
Base Doping

ABSTRACTWe contrast the stability under bias-aging conditions of GaAs/AlGaAs HBTs utilizing highly Be- or C-doped base layers. Devices with Be doping display a rapid degradation of dc current gain and junction ideality factor. At 200°C, a 2 × 10 μm2 Be-doped device (4 × 1019cm−3 base doping) operated at a current density of 2.5 × 104 A. cm−2 shows a decrease in gain from 16 to 1.5 within 2h. Under the same conditions a C-doped device with even higher base-doping (7 × 1019 cm−3) is stable over periods of 36h, the longest time we tested our structures. The degradation of Be-doped devices is consistent with the mechanism of recombination-enhanced diffusion of interstitials into the adjoining layers. Similar results are obtained with Zn-doped devices. Since C occupies the As sub-lattice rather than the Ga sublattice as with Be and Zn, it is not susceptible to reaction with Ga interstitials injected during growth or bias-aging.

scholarly journals Screen Printed-Carbon Electrode Modifikasi Bismut untuk Analisis Kadmium dengan Voltametri Siklik

2020 ◽  
Vol 10 (1) ◽  
pp. 65
Author(s):  
Novianti Novianti ◽  
R V Manurung ◽  
Arifin Arifin
Keyword(s):  
Cyclic Voltammetry ◽  
Cadmium Concentration ◽  
Test Results ◽  
Screen Printed Carbon Electrode ◽  
Cadmium Metal ◽  
Cyclic Voltammetry Method ◽  
Proportional Relationship ◽  
The Stability ◽  
Characterization Test ◽  
A Current

Cadmium (Cd) is a heavy metal that has high toxicity. Cadmium levels need to be considered in an environment that can accumulate and can poison all biotic components. In this research measurements of cadmium metal using bismuth-modified carbon screen electrode  used cyclic voltammetry method. The parameters considered are the resolution of the comparative electrodes and the voltage produced from variations in cadmium concentration. The test results prove the stability of three sensors each at a voltage of 3.3 - 4.6 mV, 9.3-11.4 mV, and 27.4 - 29.8 mV. While the results of the cyclic voltammetry characterization test vary depending on the concentration of cadmium. Concentrations of 0.5-100 ng / mL produce an oxidation peak at a current of 2.03 x 10-5 - 5.00 x 10-5 A. These results show a directly proportional relationship between the cadmium concentration and the resulting current.

scholarly journals Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Alex C. De Palma ◽  
Edward T. Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Water Oxidation ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

AbstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days.

scholarly journals Flexible freestanding MoS2-based composite paper for energy conversion and storage

2019 ◽  
Vol 10 ◽  
pp. 1488-1496 ◽  
Author(s):  
Florian Zoller ◽  
Jan Luxa ◽  
Thomas Bein ◽  
Dina Fattakhova-Rohlfing ◽  
Daniel Bouša ◽  
...  
Keyword(s):  
Composite Material ◽  
Energy Storage ◽  
Mechanical Strength ◽  
Current Density ◽  
Active Sites ◽  
High Energy ◽  
Onset Potential ◽  
High Flexibility ◽  
A Current ◽  
Composite Paper

The construction of flexible electrochemical devices for energy storage and generation is of utmost importance in modern society. In this article, we report on the synthesis of flexible MoS2-based composite paper by high-energy shear force milling and simple vacuum filtration. This composite material combines high flexibility, mechanical strength and good chemical stability. Chronopotentiometric charge–discharge measurements were used to determine the capacitance of our paper material. The highest capacitance achieved was 33 mF·cm−2 at a current density of 1 mA·cm−2, demonstrating potential application in supercapacitors. We further used the material as a cathode for the hydrogen evolution reaction (HER) with an onset potential of approximately −0.2 V vs RHE. The onset potential was even lower (approximately −0.1 V vs RHE) after treatment with n-butyllithium, suggesting the introduction of new active sites. Finally, a potential use in lithium ion batteries (LIB) was examined. Our material can be used directly without any binder, additive carbon or copper current collector and delivers specific capacity of 740 mA·h·g−1 at a current density of 0.1 A·g−1. After 40 cycles at this current density the material still reached a capacity retention of 91%. Our findings show that this composite material could find application in electrochemical energy storage and generation devices where high flexibility and mechanical strength are desired.

scholarly journals Tartrate-Based Electrolyte for Electrodeposition of Fe–Sn Alloys

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 313
Author(s):  
Simona Mrkonjić Zajkoska ◽  
Edmund Dobročka ◽  
Selma Hansal ◽  
Rudolf Mann ◽  
Wolfgang E. G. Hansal ◽  
...  
Keyword(s):  
Current Density ◽  
Cathode Surface ◽  
Ph Value ◽  
Complexing Agent ◽  
Lack Of Information ◽  
The Stability ◽  
First Time ◽  
Anomalous Deposition ◽  
Main Attribute ◽  
A Current

Magnetic properties of the sustainable Fe–Sn alloys are already known. However, there is lack of information in the field of Fe–Sn electrodeposition. In the present study, a novel Fe(III)–Sn(II) electrolyte with tartaric acid as a single complexing agent is introduced. The influence of the pH and the current density on the structural properties of the Fe–Sn deposit was studied. The stability of the electrolytes as a main attribute of sustainability was tested. The ferromagnetic phases Fe5Sn3 and Fe3Sn were electrodeposited for the first time, and it was found that the mechanism of the Fe–Sn deposition changes from normal to anomalous at a pH value 3.0 and a current density of approximately 30 mA/cm2. A possible reason for the anomalous deposition of Fe–Sn is the formation of Fe-hydroxides on the cathode surface. Two electrolyte stability windows exist: The first stability window is around a pH value of 1.8 where bimetallic Fe–Sn tartrate complexes were formed, and second one is around a pH value of 3.5 where most of the Sn ions were present in the form of [Sn(tart)2]2− and Fe in the form of [Fe(tart)]+ complexes.

scholarly journals Design of a Single-Ion Conducting Polymer Electrolyte for Sodium-Ion Batteries

2021 ◽  
Author(s):  
Kewei Liu ◽  
Yingying Xie ◽  
Zhenzhen Yang ◽  
Hong-Keun Kim ◽  
Trevor Dzwiniel ◽  
...  
Keyword(s):  
Polymer Electrolyte ◽  
Current Density ◽  
Specific Capacity ◽  
Transference Number ◽  
Free Standing ◽  
Ion Conducting ◽  
The Stability ◽  
Ion Conducting Polymer ◽  
A Current

Abstract A sodium bis(fluoroallyl)malonato borate salt (NaBFMB) was synthesized. NaBFMB can be photo-crosslinked to create a single-ion conducting electrolyte (NaSIE), with anions immobilized through the 3-D crosslinked network. The NaSIE can be prepared either as a free-standing film or through a drop-cast method followed by a photo crosslinking method for an in-situ formation on top of the electrodes. The free-standing film of NaSIE has a high ionic conductivity of 2×10-3 S/cm at 30 oC, and a high transference number (tNa+) of 0.91 . The electrochemical stability of NaSIE polymer electrolyte was demonstrated be stable up to 5 V vs Na/Na+. When tested inside a symmetrical Na//Na cell, the NaSIE shows a critical current density (CCD) of 0.4 mA/cm2. The stability of NaSIE was further demonstrated via a long cycling of the stripping/plating test with a current density of 0.1 mA/cm2 at five-minute intervals for over 10,000 minutes. Using the in-situ method, NaSIE was used as the electrolyte for a sodium metal battery using P2cathode of Na0.67Ni0.33Mn0.67O2 (NNMO) and was cycled between the cut-off voltages of 2.0 – 4.0 V. A high initial specific capacity (85.7 mAh/g) with a capacity retention of 86.79% after 150 cycles was obtained.

Giant Electroresistance Induced by Electric Currents in Epitaxial Thin Films of Pr0.7Sr0.3MnO3

2013 ◽  
Vol 483 ◽  
pp. 130-133
Author(s):  
He Yan Liu ◽  
Liang Zhou ◽  
Ying Li ◽  
Guo Dong Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electric Current ◽  
Current Density ◽  
Epitaxial Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Current Densities ◽  
A Current ◽  
Peak Resistance

Electric-current induced electroresistance effect has been investigated in epitaxial Pr0.7Sr0.3MnO3thin film grown on the (100) SrTiO3substrate. A significant change ~38% in the ratio of the peak resistance at different currents with a current density up to ~3.3×103A/cm2was achieved. Such an ER effect is more remarkable in comparing with that reported in other manganite oxides with similar current densities. Compared with that of the as-grown films, the electroresistance of the post-annealed films is smaller, while the ER effect (~14%) is obtained. Although the nature behind such an electroresistance effect has not been well understood, the field tunability of the metal/insulator transition and the electroresistance effect induced by currents might be of potential for various applications such as filed effect devices.

Sign in / Sign up

Export Citation Format

Share Document