Development of A Novel Solid-State pH Sensor Based on Tin Oxide Thin Film

2004 ◽  
Vol 59 (8) ◽  
pp. 877-880 ◽  
Author(s):  
Taher M. El-Agez ◽  
Manal R. Al-Saraj ◽  
Monzir S. Abdel-Latif
Keyword(s):  
Solid State ◽  
Tin Oxide ◽  
Glass Substrate ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Calibration Graph ◽  
Oxide Thin Film ◽  
Solution Temperature ◽  
Graphite Film ◽  
Ph Range

AbstractA solid-state pH sensor was fabricated using a transparent conductive tin oxide film on a glass substrate. The coating of the glass substrate was achieved by a novel simple chemical vapor deposition (CVD) procedure. The response time of the pH sensor was substantially reduced when a thin graphite film was deposited onto the tin oxide conductive film. The sensor slope was found to increase as the temperature of the solution was increased. The performance of the sensor was investigated in the pH range from 0.3 to 11.0. A straight-line calibration graph was achieved throughout the whole range tested, especially when the solution temperature was 80 ℃. The working pH range was found to decrease on the expense of the lower range as the temperature was decreased. Results obtained by the suggested sensor compares very well with conventional pH electrodes where the square of the correlation coefficient was 0.999.

scholarly journals Properties of zinc tin oxide thin film by aerosol assisted chemical vapor deposition (AACVD)

2018 ◽  
Author(s):  
Muhammad Arif Riza ◽  
Abu Bakar Abd Rahman ◽  
Suhaila Sepeai ◽  
Norasikin Ahmad Ludin ◽  
Mohd Asri Mat Teridi ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

RuO2–IrO2 solid state micro-liquid film pH sensor based on polymeric precursor method

2020 ◽  
Vol 64 (1-4) ◽  
pp. 1047-1055
Author(s):  
Hongli Ji ◽  
Junjun Jia ◽  
Chao Zhang ◽  
Chongcong Tao ◽  
Lu Yang ◽  
...  
Keyword(s):  
Solid State ◽  
Ph Value ◽  
Ph Sensor ◽  
Polymeric Precursor Method ◽  
Polymeric Precursor ◽  
Precursor Method ◽  
Wide Ph Range ◽  
Glass Type ◽  
Ph Range ◽  
High Level

The glass-type electrodes based pH sensors suffer from the weakness of fragility and poor stability in acid/alkali solution. To overcome these disadvantages, a novel solid-state pH sensor based on a RuO2–IrO2 H+ sensitive electrode via a polymeric precursor method was developed in this paper. The electrochemical performance of pH sensor was tested in different conditions. The experimental results showed that the sensitivity of the pH sensor could reach a high level of 52.0 mV/pH in a wide pH range of 2 ∼ 10. Furthermore, the response of pH sensor was fast and the response time remained less than 2.2 s even under varying pH conditions. The experiment was repeated three times during a period of time, the potential difference of pH sensor was between ±0.3 mV and ±0.9 mV in different pH value solutions, demonstrating its good stability, repeatability, recyclability and small potential drift. The negligible interference of Li+, Na+, K+, Ca2+, Mg2+, to the proposed pH sensor was also proven experimentally.

Multilayer Transparent Conducting Oxide Thin Film Produced by Linear Combinatorial Synthesis

2003 ◽  
Vol 804 ◽  
Author(s):  
Xiaonan Li
Keyword(s):  
Tin Oxide ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Transparent Conducting Oxide ◽  
Cadmium Oxide ◽  
Chemical Vapor ◽  
Combinatorial Synthesis ◽  
Oxide Thin Film ◽  
Transparent Conducting ◽  
20 Nm

ABSTRACTMultilayer transparent conducting oxide (TCO) structures consisting of alternating layers of tin oxide (SnO2) and cadmium oxide (CdO) pairs was studied. A low-pressure metalorganic chemical vapor deposition with a linear combinatorial approach was used to fabricate the libraries. Three libraries were studied with the pair thickness range covered from 500 nm to 4 nm. For pairs thicker than 150 nm, the material properties of the multilayer simply show a combination of CdO and SnO2 characteristics. When pair thinner than 70 nm, the interface effect started emerging. As pairs became thinner than 20 nm, the new compound phase was formed.

Electrical Characterization of Al/Ag Contacts on Al-Zn Codoped SnO2 Thin Films Deposited by Solid-State Chemical Vapor Deposition

2014 ◽  
Vol 925 ◽  
pp. 433-435
Author(s):  
Lee Siang Chuah ◽  
S.S. Tneh ◽  
Z. Hassan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Solid State ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Current Voltage ◽  
State Chemical

Excellent tin oxide (SnO2) ohmic and Schottky contacts are need for device utilizations and essential electrical characterization. Up to now, metal contact property studies on SnO2 are inadequate and provide miscellaneous results. Ohmic contacts have been studied on high quality epitaxial n-type tin oxide thin films that were grown by solid state chemical vapor deposition (SSCVD). To the best of our knowledge, this is the first time that Al-Zn co-doped SnO2 films grown by SSCVD have been reported. Non-alloyed Al/Ag, Al, and Ag contacts were characterized by current-voltage measurements. Ohmic contacts were realized using Al, Ag , and Al/Ag after an air treatment of the SnO2 surface.

Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 106374-106379 ◽  
Author(s):  
Po-Tsun Liu ◽  
Chih-Hsiang Chang ◽  
Chur-Shyang Fuh
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Zinc Tin Oxide

The influence of a backchannel passivation layer on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors was studied. The ALD Al2O3 films and plasma-enhanced chemical vapor deposited SiO2 films were separately used as channel passivation layers.

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