HIGH QUALITY SmBa2Cu3O7-X THIN FILMS FOR MICROWAVE APPLICATIONS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 768-772 ◽  
Author(s):  
M. A. BOFFA ◽  
F. BOBBA ◽  
A. M. CUCOLO ◽  
R. MONACO
Keyword(s):  
Thin Films ◽  
Microwave Measurements ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Oxygen Pressure ◽  
Afm Analysis ◽  
Microstrip Resonators ◽  
Microwave Applications ◽  
Critical Current Density Jc

In this paper we report on the analysis of the surface properties of c-axis oriented, highly epitaxial SmBa 2 Cu 3 O 7-X thin films grown by high oxygen pressure d.c. sputtering technique on (100)k LaAlO 3 substrates. Structural and morphological characterizations of the samples were carried out by means of X-Ray diffraction and AFM analysis. The AFM images show a surface morphology with characteristic screw dislocations with roughness of 2-3 nm on 1 μ m 2 area. The superconducting properties indicate a critical temperature Tc(R=0)>90K and a critical current density Jc>1*106A/cm 2 at T=77K. Preliminary microwave measurements on meanderline microstrip resonators show surface residual resistances Rs<13μΩ a 1 GHz at T=4.2K .

X-ray diffraction studies elucidating high temperature superconducting properties of YBa2Cu3O7−x thin films

1994 ◽  
Vol 209 (4) ◽  
Author(s):  
M. Schieber ◽  
Y. Ariel ◽  
A. Raizman ◽  
S. Rotter
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Quantitative Evaluation ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Temperature Superconducting

AbstractA quantitative evaluation of the influence of the amount of the crystallographically unoriented grains of YBa

ULTRATHIN SUPERCONDUCTING YBa2Cu3O7-δ FILMS OBTAINED BY HIGH OXYGEN PRESSURE DC SPUTTERING TECHNIQUE

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2640-2645 ◽  
Author(s):  
M. A. BOFFA ◽  
A. M. CUCOLO
Keyword(s):  
Buffer Layer ◽  
Oxygen Pressure ◽  
Unit Cell ◽  
High Oxygen ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dc Sputtering ◽  
High Oxygen Pressure ◽  
Dc Sputtering Technique

Ultrathin YBa 2 Cu 3 O 7-x films with thicknesses ranging from 24 Å to 300 Å have been grown by high oxygen pressure sputtering technique on (100)K SrTiO 3 substrates without any additional buffer layer. These samples have been characterized by means of X-Ray diffraction and transport measurements. The thickness was calibrated by using the low angle X-Ray diffraction thecnique. The superconducting properties indicated no degradation of the resistive T c (ρ=0)=89 K for the 300 Å samples, while T c (ρ=0)=35.3 K was measured on the 3 unit cell thick films.

Defects in YBa2Cu3O7−δ Thin Films and Their Influences on Tc

1995 ◽  
Vol 401 ◽  
Author(s):  
Jinhua Ye ◽  
Keikichi Nakamura
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Oxygen Deficiency ◽  
Diffraction Method ◽  
Cation Ordering ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Defects ◽  
Kinetics Of

AbstractCrystallographic defects introduced in the YBa2Cu3O7−δ thin films during depositions were studied using X-ray diffraction method, and their influences on superconducting properties were also investigated by examining Tc variation of the as-grown and post-annealed thin films. It was found that there exist several kinds of defects in the as-grown thin films, such as oxygen deficiency, cation disordering, and others like lattice dislocation, stacking faults, etc.. These defects could be relaxed by heat treatment at temperatures ranging from 400 to 900 °C, resulting in Tc enhancement more or less. Quantitative understandings of the relations among annealing temperature, structural relaxation, and Tc improvement has also been reached. The kinetics of the relaxation of the defects in the YBCO films was studied further using a high-temperature X-ray diffractometer. Interesting phenomena have been observed at around 400 °C due to abnormal desorption behavior of oxygen and at higher temperatures relating to cation ordering.

Deposition of Superconducting Thin Films of Magnesium Di-Boride on Various Substrates by Electroless Plating Process

2010 ◽  
Vol 654-656 ◽  
pp. 1840-1843
Author(s):  
Susil K. Putatunda ◽  
Khurpa S. Vijayaragavan ◽  
Gavin Lawes
Keyword(s):  
Thin Films ◽  
Electroless Plating ◽  
Magnesium Diboride ◽  
Superconducting Thin Films ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Gold Silver

Superconducting thin films of magnesium diboride (MgB2) has been synthesized on various substrates such as gold, silver, copper and silicon using a novel electroless plating technique. The microstructures and the superconducting properties of these films have been characterized using X-ray diffraction, scanning electron microscopy and temperature dependent magnetometry. X-ray diffraction measurements confirm that the films are crystalline magnesium diboride with some impurity phases. Clear evidence for a superconducting transition in the magnetization measurements was observed.

Microstructure and superconducting properties of Y–Ba–Cu–O and Yb–Ba–Cu–O thin films formed by metalorganic deposition

1989 ◽  
Vol 4 (5) ◽  
pp. 1065-1071 ◽  
Author(s):  
Y. L. Chen ◽  
J. V. Mantese ◽  
A. H. Hamdi ◽  
A. L. Micheli
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Size ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Conventional Furnace ◽  
Transmission Electron ◽  
Metalorganic Deposition

Thin films of Y–Ba–Cu–O and Yb–Ba–Cu–O, 0.5–1.5 μm in thickness, were deposited onto (211) and (100) SrTiO3 single crystal substrates by metalorganic deposition (MOD). After deposition the samples were annealed either by conventional furnace annealing or rapid thermal annealing (RTA). The microstructures of these films were then characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive x-ray spectrometry (EDS). Grain size of the annealed films varied from 0.25 to 1.0 μm. Improved superconducting properties were found for the RTA samples, compared to furnace annealing, and were attributed to larger grain size, little strontium diffusion into the thin films from the substrate, and highly preferred orientation of the 1:2:3 phase.

CARBON ION IRRADIATION EFFECTS ON PULSED LASER DEPOSITED TITANIUM NITRIDE THIN FILMS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550020 ◽  
Author(s):  
KHALIQ MAHMOOD ◽  
SHAZIA BASHIR ◽  
MAHREEN AKRAM ◽  
ASMA HAYAT ◽  
FAIZAN-Ul-HAQ ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Irradiation Effects ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Higher Doses

Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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