Oxide layer characterization by XRD and Rietveld refinements in maraging steel 300 aged in steam atmosphere

2021 ◽  
Vol 9 (1A) ◽  
Author(s):  
Vanessa Sanches Pereira da Silva ◽  
José Roberto Ferreira Neto ◽  
Silvia Lucas Ferreira da Silva ◽  
Diogo Costa de Oliveira ◽  
Fábio De Camargo
Keyword(s):  
Oxide Layer ◽  
Maraging Steel ◽  
Rietveld Refinements

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Microstructure of resistance spot welding of maraging steels

1990 ◽  
Vol 48 (4) ◽  
pp. 900-901
Author(s):  
I. Neuman ◽  
S.F. Dirnfeld ◽  
I. Minkoff
Keyword(s):  
Maraging Steel ◽  
Spot Welding ◽  
Lath Martensite ◽  
Base Material ◽  
Aging Treatment ◽  
High Strength ◽  
Maraging Steels ◽  
Heat Treated ◽  
Current Cycle ◽  
Welding Processes

Experimental work on the spot welding of Maraging Steels revealed a surprisingly low level of strength - both in the as welded and in aged conditions. This appeared unusual since in the welding of these materials by other welding processes (TIG,MIG) the strength level is almost that of the base material. The maraging steel C250 investigated had the composition: 18wt%Ni, 8wt%Co, 5wt%Mo and additions of Al and Ti. It has a nominal tensile strength of 250 KSI. The heat treated structure of maraging steel is lath martensite the final high strength is reached by aging treatment at 485°C for 3-4 hours. During the aging process precipitation takes place of Ni3Mo and Ni3Ti and an ordered solid solution containing Co is formed.Three types of spot welding cycles were investigated: multi-pulse current cycle, bi-pulse cycle and single pulsle cycle. TIG welded samples were also tested for comparison.The microstructure investigations were carried out by SEM and EDS as well as by fractography. For multicycle spot welded maraging C250 (without aging), the dendrites start from the fusion line towards the nugget centre with an epitaxial growth region of various widths, as seen in Figure 1.

ffect of Na2WO4 in electrolyte on mechanical properties of oxide layer on Al alloy via plasma electrolytic oxidation

2015 ◽  
Vol 53 (8) ◽  
pp. 535-540 ◽  
Author(s):  
Young Gun Ko ◽  
Dong Hyuk Shin ◽  
Hae Woong Yang ◽  
Yeon Sung Kim ◽  
Joo Hyun Park ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Oxide Layer ◽  
Plasma Electrolytic Oxidation ◽  
Al Alloy ◽  
Electrolytic Oxidation ◽  
Plasma Electrolytic

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

MODELING THE NORMAL SPECTRAL EMISSIVITY OF BRASS H62 AT 800–1100 K DURING OXIDE LAYER GROWTH

2018 ◽  
Vol 49 (15) ◽  
pp. 1445-1458
Author(s):  
Deheng Shi ◽  
Fenghui Zou ◽  
Zunlue Zhu ◽  
Jinfeng Sun
Keyword(s):  
Oxide Layer ◽  
Spectral Emissivity ◽  
Layer Growth ◽  
Normal Spectral Emissivity

Exploring the Influence of Substitution on the Structure and Transport Properties in the Sodium Superionic Conductor Na11+xSn2+x(Sb1−yPy)1−xS12

2020 ◽  
Author(s):  
Marvin Kraft ◽  
Lara Gronych ◽  
Theodosios Famprikis ◽  
Saneyuki Ohno ◽  
Wolfgang Zeier
Keyword(s):  
Electrochemical Impedance ◽  
Structural Phase ◽  
Ionic Transport ◽  
Sodium Ion ◽  
Ionic Conductors ◽  
Temperature Dependent ◽  
Activation Barriers ◽  
Rietveld Refinements ◽  
High Performing ◽  
The Given

<p>Sulfidic sodium ion conductors are currently investigated for the possible use in all-solid-state sodium ion batteries. The design of high performing electrolytes in terms of temperature-dependent ionic transport is based upon the fundamental understanding of structure – transport relationships within the given structural phase boundaries inherent to the investigated materials class. In this work, the Na<sup>+</sup> superionic structural family of Na<sub>11</sub>Sn<sub>2</sub>PS<sub>12</sub> is explored by using the systematic antimony substitution with phosphorous in Na<sub>11+<i>x</i></sub>Sn<sub>2+<i>x</i></sub>(Sb<sub>1-<i>y</i></sub>P<i><sub>y</sub></i>)<sub>1-<i>x</i></sub>S<sub>12</sub>. A combination of Rietveld refinements against X-ray synchrotron diffraction data with electrochemical impedance spectroscopy is used to monitor the changes in the anionic framework, the Na<sup>+</sup> substructure and the ionic transport. A new simplified descriptor for the average Na<sup>+</sup> diffusion pathways, the average Na<sup>+</sup> polyhedral volume is introduced, which is used to correlate the contraction of the overall lattice and the found activation barriers in the system. This study exemplifies how substitution affects diffusion pathways in ionic conductors and widens the knowledge about the related structural motifs and their influence on the ionic transport in this novel class of ionic conductors.</p>

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