scholarly journals The effect of Bi additives on the properties of Fe-Pt films

2019 ◽  
Vol 27 (2) ◽  
pp. 47-50
Author(s):  
V. F. Bashev ◽  
N. A. Kutseva ◽  
O. I. Kushnerov ◽  
S. I. Ryabtsev ◽  
O. V. Yelina ◽  
...  
Keyword(s):  
Coercive Force ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Amorphous Phases ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Metastable Structures ◽  
Nanocrystalline And Amorphous ◽  
Pt Films

Using the modernized three-electrode ion-plasma sputtering method, homogeneous thin films of FePt and Fe (Pt/Bi) were obtained. Films were deposited on NaCl and glass-ceramic substrates. The film thickness was 120-530 nm. In this case, the calculated cooling rate reached ~ 1012–1014 K/s. The structure of the FePt and Fe (Pt/Bi) films was investigated using X-ray diffraction and electron microscopy methods. It was established that metastable phases were formed in freshly sputtered films, including a supersaturated solid solution, a nanocrystalline and amorphous phases. It was determined that the obtained metastable structures are stable when heated to 540-880 K, depending on the composition. It was established that Bi additives significantly reduce the coercive force of films in the as-sputtered state. It was shown that a heat treatment increased the coercive force up to 36 kA/m in FePt films and up to 10 kA/m in Fe (Pt/Bi) films. The composition of Fe (Pt/Bi) films with a small value of the temperature coefficient of resistance (TCR ~3·10-5 K-1) was determined.

scholarly journals Thermodynamic and kinetic features of the formation of amorphous state in films during quenching from the vapor state

2021 ◽  
Vol 29 (1) ◽  
pp. 57-60
Author(s):  
V. F. Bashev ◽  
S. I. Ryabtsev ◽  
F. F. Dotsenko
Keyword(s):  
Amorphous State ◽  
Effective Rate ◽  
Vapor State ◽  
Amorphous Phases ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Nanocrystalline And Amorphous ◽  
Good Agreement ◽  
Kinetic Features

The method of modernized ion-plasma sputtering produced metastable states, including nanocrystalline and amorphous phases in films, even in alloys whose components do not mixed in the liquid state. The effective rate of energy relaxation at different modes of precipitation is theoretically estimated to be 1012 -1014 K/s during ion-plasma sputtering of atoms. On thermodynamic and kinetic states, different active and passive parameters for amorphization during sputtering are analyzed. The receiving expressions are in good agreement with the experimental results and contribute to the determination of further steps to obtain an amorphous state.

scholarly journals Physical properties and structure of vapor-quenched immiscible alloys

2018 ◽  
Vol 26 (1) ◽  
pp. 45-52
Author(s):  
V. F. Bashev ◽  
N. A. Kutseva ◽  
O. I. Kushnerov ◽  
S. I. Ryabtsev ◽  
S. N. Antropov
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Crystal Lattices ◽  
Amorphous Phases ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Nanocrystalline And Amorphous ◽  
Constant Rate ◽  
Thermally Processed ◽  
Hysteretic Magnetic Properties

The method of modernized ion-plasma sputtering produced metastable states, including nanocrystalline and amorphous phases in films of Fe-Ag, Fe-Bi, Fe-Ag-Bi, Fe-Co-Ag and Ni-Ag alloys whose components do not mixed in the liquid state. The periods of the crystal lattices and the dimensions of the crystallites of the nonequilibrium phases in the fresh-sputtered state and after the heating are determined. The temperatures of the beginning and the end of the decomposition of metastable phases are established when heated at a constant rate. The electric and hysteretic magnetic properties of films in freshly dusted and thermally processed states are measured. The compositions and conditions for obtaining films with low values of the temperature coefficient of electrical resistivity (~ 10-5 K-1) and high coercive force (HC ~ 150 kA/m) are established. Such films can be promising for use as thin-film precision resistors and magnetic information carriers with an increased recording density.

Formation of Metastable Structures and Amorphous Phases in cu-w Alloys Using the Triode Sputtering Technique

1988 ◽  
Vol 100 ◽  
Author(s):  
H. F. Rizzo ◽  
L. E. Tanner ◽  
M. A. Wall ◽  
T. B. Massalski ◽  
E. D. McClanahan
Keyword(s):  
Amorphous Alloys ◽  
Lattice Parameter ◽  
Near Neighbor ◽  
X Ray Diffraction ◽  
Amorphous Phases ◽  
Metastable Structures ◽  
Vegard’S Law ◽  
Wide Range ◽  
Bcc Phase ◽  
Near Neighbor Distance

ABSTRACTThe triode sputtering technique and a “split-target” arrangement were used to produce metastable crystalline and amorphous phases in the Cu-W system under essentially oxygen-free conditions. Large metastable extensions of solid solubility were observed both from the Cu (fcc) and W (bcc) sides of the phase diagram, and a wide range of metallic glass formation was observed, approximately between 30 and 65 at.% W. The thickness of the amorphous Cu-W phase (40–160 pm) that can be deposited without the formation of the metastable bcc phase appears to be dependent on the Cu-W alloy composition. On heating, the crystallization temperature of the amorphous alloys was higher than 350°C. The behavior of the lattice parameter and near-neighbor distance has been studied with x-ray diffraction, showing small positive deviations from an assumed Vegard's Law. Hardness measurements indicate that the metastable crystalline phases are relatively harder than the amorphous phase.

scholarly journals Structure and corrosion in NaCl solution of quasicrystalline Al–Cu–Fe cast alloys and thin films

2019 ◽  
Vol 27 (1) ◽  
pp. 27-30 ◽  
Author(s):  
S. I. Ryabtsev ◽  
O. V. Sukhova ◽  
V. A. Polonskyy
Keyword(s):  
Cast Alloy ◽  
Film Surface ◽  
Nacl Solution ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Cast Alloys ◽  
Fe Alloys ◽  
First Time ◽  
Potentiodynamic Method

For the first time, quasicrystalline Al60Cu28Fe12 films with 260 nm thickness cooled at 1012–1014 K/s were produced by the modernized method of three-electrode ion-plasma sputtering. Films were deposited on NaCl substrate. The structure of as-sputtered films was investigated in comparison with that of as-cast specimens by methods of quantitative metallography, X-ray analysis, and scanning electron microscopy. Corrosion behavior in 5% NaCl aqueous solution was studied by potentiodynamic method and model tests. In the structure of the as-cast Al–Cu–Fe alloy, the quasicrystalline icosahedral i-phase was established to co-exist with λ -Al13Fe4 , τ-AlCu(Fe), η-AlCu, and θ-Al2Cu crystalline phases and occupy ~56 % of the alloy volume. The Al–Cu–Fe film contains dispersive quasicrystalline i-phase (~3 nm in size) that is stable up to 723 К. Corrosion of the as-sputtered Al–Cu–Fe film runs at the lower rate as compared with that of the as-cast alloy of the same composition. Model corrosion tests for 1, 2, 3, 4, 8 days with 5% NaCl solution at 293 K indicate that the investigated Al–Cu–Fe film remains virtually untouched by corrosion. No marks of pittings typical for as-cast Al–Cu–Fe alloys are observed on the film surface affected by saline solution.

scholarly journals ION-PLASMA DEPOSITION OF THIN QUASICRYSTALLINE Al-Cu-Fe AND Al-Cu-Co FILMS

2020 ◽  
pp. 145-150
Author(s):  
S.I. Ryabtsev ◽  
O.V. Sukhova
Keyword(s):  
Electrical Resistivity ◽  
Plasma Deposition ◽  
Coherent Scattering ◽  
Room Temperature Resistivity ◽  
Ceramic Substrates ◽  
X Ray ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Transmission Electron ◽  
Cu Film

Al-Cu-Fe and Al-Co-Cu thin films were firstly deposited on sodium chloride or glass-ceramic substrates by modernized method of three-electrode ion-plasma sputtering. The nominal compositions of the films were chosen in the regions of quasicrystalline phases formation. The as-sputtered films were typically 85 to 260 nm thick. The films were annealed at temperatures ranging from 873 to 923 K for 10 min…3 h. The structure of films was studied by scanning and transmission electron microscopy and X-ray analysis. Electrical properties were determined by a fourprobe method. The as-deposited Al-Cu-Fe film was found to consist of isolated quasicrystalline nanoparticles of icosahedral i-phase. With substitution of Fe for Co in Al-Co-Cu film, X-ray amorphous phase and only traces of quasicrystalline decagonal D-phase were revealed. After annealing, the films were predominately quasicrystalline due to transformation of metallic phases into quasicrystalline. At the same time, the size of coherent scattering regions for quasicrystals increased by two times from ~ 3 to 6 nm. Measurements of electrical resistivity showed that no phase transformations occurred in Al-Cu-Fe film up to 723 K and in Al-Co-Cu film up to 640 К. With following increase in temperature, electrical resistivity of Al-Cu-Fe film increased by six orders of magnitude (up to 6∙107 Ω/sq). In contrast, electrical resistivity of Al-Co-Cu film decreased by ~ 2 times. After cooling to room temperature, resistivity of Al-Cu-Fe film equaled to ~ 3∙105 Ω/sq and that of Al-Co-Cu film – to 8.7 Ω/sq. We concluded that Al-Cu-Fe thin film is more suitable candidate for application as precise high-ohmic materials.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Direct Determination of Stress Levels in Sputtered Films by means of X-Ray Diffraction Topographic Method

1987 ◽  
Vol 26 (Part 1, No. 1) ◽  
pp. 157-161 ◽  
Author(s):  
Osamu Nittono ◽  
Yoshihiro Sadamoto ◽  
Sheng Kai Gong
Keyword(s):  
Direct Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Stress Levels

INFLUENCE OF THE COMPOSITION OF THE RADIO-FREQUENCY SPUTTERING ATMOSPHERE ON THE DENSITY OF STATES AND INTERBAND LIGHT ABSORPTION IN THIN Y2O3 FILMS

2021 ◽  
Vol 88 (6) ◽  
pp. 881-886
Author(s):  
O. M. Bordun ◽  
I. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid
Keyword(s):  
Absorption Band ◽  
Density Of States ◽  
Interband Absorption ◽  
Long Wavelength ◽  
Plasma Sputtering ◽  
Radio Frequency Sputtering ◽  
Ion Plasma ◽  
Quasi Classical Approximation ◽  
Heavily Doped ◽  
Interband Light Absorption

The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mixture of these gases is shown to be approximated well by the Urbach empirical rule. Diffractograms of the obtained films were studied and a model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model allows determining the radius of the basic electronic state, the screening radius, and the rootmean-square potential depending on the sputtering atmosphere.

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