scholarly journals ION-PLASMA DEPOSITION OF THIN QUASICRYSTALLINE Al-Cu-Fe AND Al-Cu-Co FILMS

2020 ◽  
pp. 145-150
Author(s):  
S.I. Ryabtsev ◽  
O.V. Sukhova
Keyword(s):  
Electrical Resistivity ◽  
Plasma Deposition ◽  
Coherent Scattering ◽  
Room Temperature Resistivity ◽  
Ceramic Substrates ◽  
X Ray ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Transmission Electron ◽  
Cu Film

Al-Cu-Fe and Al-Co-Cu thin films were firstly deposited on sodium chloride or glass-ceramic substrates by modernized method of three-electrode ion-plasma sputtering. The nominal compositions of the films were chosen in the regions of quasicrystalline phases formation. The as-sputtered films were typically 85 to 260 nm thick. The films were annealed at temperatures ranging from 873 to 923 K for 10 min…3 h. The structure of films was studied by scanning and transmission electron microscopy and X-ray analysis. Electrical properties were determined by a fourprobe method. The as-deposited Al-Cu-Fe film was found to consist of isolated quasicrystalline nanoparticles of icosahedral i-phase. With substitution of Fe for Co in Al-Co-Cu film, X-ray amorphous phase and only traces of quasicrystalline decagonal D-phase were revealed. After annealing, the films were predominately quasicrystalline due to transformation of metallic phases into quasicrystalline. At the same time, the size of coherent scattering regions for quasicrystals increased by two times from ~ 3 to 6 nm. Measurements of electrical resistivity showed that no phase transformations occurred in Al-Cu-Fe film up to 723 K and in Al-Co-Cu film up to 640 К. With following increase in temperature, electrical resistivity of Al-Cu-Fe film increased by six orders of magnitude (up to 6∙107 Ω/sq). In contrast, electrical resistivity of Al-Co-Cu film decreased by ~ 2 times. After cooling to room temperature, resistivity of Al-Cu-Fe film equaled to ~ 3∙105 Ω/sq and that of Al-Co-Cu film – to 8.7 Ω/sq. We concluded that Al-Cu-Fe thin film is more suitable candidate for application as precise high-ohmic materials.

Reduced electrical resistivity of reaction-sintered SiC by nitrogen doping

2008 ◽  
Vol 23 (4) ◽  
pp. 1020-1025 ◽  
Author(s):  
Young-Sam Jeon ◽  
Hyunho Shin ◽  
Young-Hyun Lee ◽  
Sang-Won Kang
Keyword(s):  
Heat Treatment ◽  
Electrical Resistivity ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Doping ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Post Heat Treatment ◽  
X Ray ◽  
Sic Particles ◽  
Transmission Electron

A post heat treatment of reaction-sintered SiC at 1700 °C in nitrogen atmosphere significantly reduced electrical resistivity. A trace of insulating Si3N4 phase was detected via nitrogen heat treatment in high-resolution transmission electron microscopy observation; however, based on x-ray photoelectron spectroscopy, the evidence of nitrogen doping into SiC lattice has been claimed as the mechanism to the decreased resistivity. The increase of the total volume of SiC was apparent in x-ray diffraction during the nitrogen heat treatment, which was interpreted to stem from the growth of the nitrogen-doped intergranular SiC particles and surface doping of the primary SiC to reduce the contact resistance between the primary SiC particles.

Stress Gradients Observed in Cu Thin Films Induced by Capping Layers

2009 ◽  
Vol 1156 ◽  
Author(s):  
Conal E. Murray ◽  
Paul R. Besser ◽  
Christian Witt ◽  
Jean L. Jordan-Sweet
Keyword(s):  
Deposition Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Stress Distributions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Cu Films ◽  
Transmission Electron ◽  
Cu Film

AbstractGlancing-incidence X-ray diffraction (GIXRD) has been applied to the investigation of depth-dependent stress distributions within electroplated Cu films due to overlying capping layers. 0.65 μm thick Cu films plated on conventional barrier and seed layers received a CVD SiCxNyHz cap, an electrolessly-deposited CoWP layer, or a CoWP layer followed by a SiCxNyHz cap. GIXRD and conventional X-ray diffraction measurements revealed that strain gradients were created in Cu films possessing a SiCxNyHz cap, where a greater in-plane tensile stress was generated near the film / cap interface. The constraint imposed by the SiCxNyHz layer during cooling from the cap deposition temperature led to an increase in the in-plane stress of approximately 180 MPa from the value measured in the bulk Cu. However, Cu films possessing a CoWP cap without a SiCxNyHz layer did not exhibit depth-dependent stress distributions. Because the CoWP capping deposition temperature was much lower than that employed in SiCxNyHz deposition, the Cu experienced elastic deformation during the capping process. Cross-sectional transmission electron microscopy indicated that the top surface of the Cu films exhibited extrusions near grain boundaries for the samples undergoing the thermal excursion during SiCxNyHz deposition. The conformal nature of these caps confirmed that the morphological changes of the Cu film surface occurred prior to capping and are a consequence of the thermal excursions associated with cap deposition.

scholarly journals Luminescence Nanothermometry Based on Pr3+ : LaF3 Single Core and Pr3+ : LaF3/LaF3 Core/Shell Nanoparticles

2019 ◽  
Vol 2019 ◽  
pp. 1-14 ◽  
Author(s):  
M. S. Pudovkin ◽  
D. A. Koryakovtseva ◽  
E. V. Lukinova ◽  
S. L. Korableva ◽  
R. Sh. Khusnutdinova ◽  
...  
Keyword(s):  
Coherent Scattering ◽  
Core Shell ◽  
Fluorescence Intensity Ratio ◽  
X Ray Diffraction ◽  
Shell Nanoparticles ◽  
X Ray ◽  
The Core ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Core Shell Nanoparticles

Core Pr3+ : LaF3 (CPr = 1%) plate-like nanoparticles (nanoplates), core/shell Pr3+ : LaF3 (CPr = 1%)/LaF3 nanoplates, core Pr3+ : LaF3 (CPr = 1%) sphere-like nanoparticles (nanospheres), and core/shell Pr3+ : LaF3 (CPr = 1%)/LaF3 nanospheres were synthesized via the coprecipitation method of synthesis. The nanoparticles (NPs) were characterized by means of transmission electron microscopy, X-ray diffraction, and optical spectroscopy. The formation of the shell was proved by detecting the increase in physical sizes, sizes of coherent scattering regions, and luminescence lifetimes of core/shell NPs comparing with single core NPs. The average physical sizes of core nanoplates, core/shell nanoplates, core nanospheres, and core/shell nanospheres were 62.2 ± 0.9, 74.7 ± 1.2, 13.8 ± 0.9 and 22.0 ± 1.2 nm, respectively. The formation of the NP shell led to increasing of effective luminescence lifetime τeff of the 3P0 state of Pr3+ ions for the core nanoplates, core/shell nanoplates, core nanospheres, and core/shell nanospheres the values of τeff were 2.3, 3.6, 3.2, and 4.7 μsec, respectively (at 300 K). The values of absolute sensitivity Sa for fluorescence intensity ratio (FIR) thermometry was 0.01 K−1 at 300 K for all the samples. The FIR sensitivity can be attributed to the fact that 3P1 and 3P0 states share their electronic populations according to the Boltzmann process. The values of Sa for lifetime thermometry for core nanoplates, core/shell nanoplates, core nanospheres, and core/shell nanospheres were (36.4 ± 3.1) · 10−4, (70.7 ± 5.9) · 10−4, (40.7 ± 2.6) · 10−4, and (68.8 ± 2.4) · 10−4 K−1, respectively.

Single Crystal Growth and Thermoelectric Properties of Ce5Cu19P12

1998 ◽  
Vol 545 ◽  
Author(s):  
K. J. Proctor ◽  
F. J. DiSalvo
Keyword(s):  
Electrical Resistivity ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Single Crystal Growth ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Resistivity

AbstractSingle crystals of the known ternary cerium intermetallic Ce5Cu19P12were grown by Sn flux and I2transport methods. The long axis of the black hexagonal needles was confirmed to be the c-axis by single crystal X-ray diffraction. Electrical resistivity of both single crystals and a pressed pellet was measured from 4 - 300 K; the room temperature resistivity is about 400 μΩ-cm for the needle axis of the crystals and about 5 mΩ-cm for the pressed pellet. The thermopower of the pressed pellet was found to be 34 μV/K at room temperature.

Characteristics of titanium nitride films grown by pulsed laser deposition

1996 ◽  
Vol 11 (6) ◽  
pp. 1458-1469 ◽  
Author(s):  
R. Chowdhury ◽  
R. D. Vispute ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Titanium Nitride ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Transmission Electron

Laser physical vapor deposition (LPVD) has been used to grow titanium nitride films on hydrogen-terminated silicon(100) substrates at deposition temperatures ranging from room temperature to 600 °C. A pulsed KrF excimer laser (λ = 248 nm, τ = 25 ns) was used with the deposition chamber maintained at a base pressure of 10−7 Torr prior to deposition. Different properties of the films were investigated by x-ray diffraction, Auger electron spectroscopy, Raman spectroscopy, optical, scanning, and high resolution transmission electron microscopy, and measurement of electrical resistivity. When the substrate temperature was low (at and below 500 °C), oxygen atoms from the residual gases were incorporated in the films. The microstructures and resistivities of TiN films were found to be strongly dependent on the temperature of the silicon substrates. The TiN films deposited at 600 °C were oxygen-free, as observed from Auger analysis, and the room temperature resistivity was found to be 14–15 μΩ-cm. Raman spectroscopy of the films showed that the nitrogen-related optical phonon peak increased with deposition temperature in comparison with the titanium-related acoustic peak. Transmission electron microscopy and x-ray diffraction analyses showed that the films were polycrystalline at low temperature with grain size ranging from 300–600 Å, depending on the temperature of the substrate. At 600 °C, the films were found to be single crystals with occasional presence of dislocation loops. The spacing of Moiré fringes in TiN/Si samples deposited at 600 °C established the nearly periodic elastic strain field extending into the TiN and Si at the interface. Although there exists a large misfit between TiN and Si (24.6%), the epitaxial growth of TiN films on Si(100) substrates was explained by means of domain-matched epitaxy with a 4-to-3 match in unit cells for TiN/Si structure, giving rise to a residual lattice misfit of only 4%.

scholarly journals Synthesis and superconductivity of new TiNiSi-type equiatomic germanide ThIrGe

2021 ◽  
Author(s):  
Guorui Xiao ◽  
Qinqing Zhu ◽  
Yanwei Cui ◽  
Bin Liu ◽  
Jifeng Wu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Structural Refinement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Thermodynamic Measurements

A new germanide ThIrGe has been synthesized and characterized by x-ray diffraction, transmission electron microscopy, electrical resistivity, magnetic susceptibility and thermodynamic measurements. The structural refinement shows that, in contrast to...

Deposition and characterization of crystalline conductive RuO2 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2401-2403 ◽  
Author(s):  
Q.X. Jia ◽  
S.G. Song ◽  
S.R. Foltyn ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Residual Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity

Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 °C to 700 °C, have a room-temperature resistivity of 35 ± 2 μω-cm, and the residual resistance ratio (R300 k/R4.2 k) is around 5 for the crystalline RuO2 thin films.

scholarly journals The effect of Bi additives on the properties of Fe-Pt films

2019 ◽  
Vol 27 (2) ◽  
pp. 47-50
Author(s):  
V. F. Bashev ◽  
N. A. Kutseva ◽  
O. I. Kushnerov ◽  
S. I. Ryabtsev ◽  
O. V. Yelina ◽  
...  
Keyword(s):  
Coercive Force ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Amorphous Phases ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Metastable Structures ◽  
Nanocrystalline And Amorphous ◽  
Pt Films

Using the modernized three-electrode ion-plasma sputtering method, homogeneous thin films of FePt and Fe (Pt/Bi) were obtained. Films were deposited on NaCl and glass-ceramic substrates. The film thickness was 120-530 nm. In this case, the calculated cooling rate reached ~ 1012–1014 K/s. The structure of the FePt and Fe (Pt/Bi) films was investigated using X-ray diffraction and electron microscopy methods. It was established that metastable phases were formed in freshly sputtered films, including a supersaturated solid solution, a nanocrystalline and amorphous phases. It was determined that the obtained metastable structures are stable when heated to 540-880 K, depending on the composition. It was established that Bi additives significantly reduce the coercive force of films in the as-sputtered state. It was shown that a heat treatment increased the coercive force up to 36 kA/m in FePt films and up to 10 kA/m in Fe (Pt/Bi) films. The composition of Fe (Pt/Bi) films with a small value of the temperature coefficient of resistance (TCR ~3·10-5 K-1) was determined.

scholarly journals Влияние толщины слоев гадолиния на магнитные свойства и процессы перемагничивания низкоразмерных Co/Gd/Co-систем

2019 ◽  
Vol 61 (3) ◽  
pp. 460
Author(s):  
А.М. Харламова ◽  
А.В. Свалов ◽  
В.Н. Лепаловский ◽  
Е.Е. Шалыгина
Keyword(s):  
Hysteresis Loops ◽  
Nanocrystalline Structure ◽  
Magnetic Characteristics ◽  
Saturation Field ◽  
X Ray ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Oscillatory Character ◽  
The Mean ◽  
And Behavior

AbstractStructural and magnetic characteristics and behavior of thin-film Co/Gd/Co systems obtained by ion plasma sputtering in a magnetic field are reported. X-ray studies showed that cobalt layers in all investigated samples have a nanocrystalline structure. The mean roughness R a of the surface of the samples does not exceed 0.5 nm and is independent of the Gd layer thickness. The shape of hysteresis loops observed for the Co/Gd/Co system depends of the thickness of the Gd layer, t _Gd. The dependence of the saturation field H _S on t _Gd has an oscillatory character. This fact is explained by interaction of the Co layers through the intermediate Gd layer.

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