scholarly journals I─V characteristics of Bi4Ge3O12─Mn crystals in the unipolar injection mode

2019 ◽  
Vol 27 (2) ◽  
pp. 81-84
Author(s):  
T. M. Bochkova ◽  
S. N. Plyaka
Keyword(s):  
Space Charge ◽  
Electron Concentration ◽  
Sharp Increase ◽  
Drift Mobility ◽  
Charge Carriers ◽  
Hole Injection ◽  
Current Voltage ◽  
Recombination Processes ◽  
Different Temperatures ◽  
Unipolar Injection

Current-voltage relations in Bi4Ge3O12 ─ Mn crystals were measured under the conditions of unipolar injection of charge carriers. The characteristics obtained for electrons and holes are different. I-V curves in the case of electron injection contain ohmic, quadratic regions and regions of a sharp increase in current. This indicates the formation of a space charge enriched in electrons. The values of conductivity, effective drift mobility, and electron concentration calculated at different temperatures are close to the values obtained for pure crystals. In the case of hole injection I-V curves are characterized by the presence of sublinear regions. It is assumed that injection of the holes causes the formation of a space charge layer depleted in electrons due to the recombination. It is shown that doping with manganese does not change the nature of conductivity in bismuth germanate crystals and strongly affects the recombination processes.

scholarly journals Electrical conductivity of lithium tantalate thin film

Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 291-296
Author(s):  
S. I. Gudkov ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
A. N. Belov
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Space Charge ◽  
Rf Magnetron Sputtering ◽  
Lithium Tantalate ◽  
Film Structure ◽  
Charge Carriers ◽  
Transport Mechanisms ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The electrical conductivity of lithium tantalate thin film on the silicon substrate was studied. The film structure was prepared by RF magnetron sputtering. In general, the current-voltage characteristics were asymmetric and similar to that of a diode. The current-voltage characteristics had several sections associated with various transport mechanisms of current carriers. The main conductivity mechanism was related to the space-charge-limited current. The current-voltage characteristics showed that there was a mismatch between the forward and backward runs. One of the reasons for such behavior is a space charge accumulation due to charge carriers which were injected from the electrode and did not relax.

Field effects in the saturation region of space charge limited current in molecular crystals

1973 ◽  
Vol 26 (3) ◽  
pp. 489 ◽  
Author(s):  
JS Bonham ◽  
LE Lyons
Keyword(s):  
Space Charge ◽  
Molecular Crystals ◽  
Hole Injection ◽  
Saturation Curve ◽  
Space Charge Limited Current ◽  
Saturation Point ◽  
Field Effects ◽  
Limited Current ◽  
Current Voltage ◽  
Saturation Region

Current-voltage curves in the saturation region of hole injection from aqueous Ce(SO4)2, KI3, and SnCl4 solutions into anthracene are reported. These, and some curves for similar systems appearing in the literature, contrast with the prediction of a flat saturation region from the theory developed by Mehl and Hale. They are inter- preted in terms of field assisted emission from the surface into the bulk of the crystal, although in some systems, particularly Ce(SO4), 1 anthracene, two mechanisms appear to operate. In an Appendix the effects of space charge on the shape of the saturation curve are shown to be small, except near the saturation point in some cases.

scholarly journals Dielectric and Electrical Properties of Copper-Polyimide-Copper Structures

2021 ◽  
Author(s):  
Julia FEDOTOVA
Keyword(s):  
Experimental Study ◽  
Electrical Properties ◽  
Space Charge ◽  
Charge Carriers ◽  
Localized States ◽  
Space Charge Limited Current ◽  
Copper Electrodes ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Frequency Dependences

Experimental study of current-voltage (I-V) characteristics and frequency dependences of impedance in copper-Kapton-copper structures in the temperature range 240 – 300 K were carried out. Concentration and mobility of charge carriers thermally excited from traps with exponential distribution by energy in Kapton bulk and metal-Kapton interface and injected from copper electrodes into Kapton were estimated from the fitting of experimental I-V curves within the frame of the model of the space charge limited current (SCLC). Concentration and the width of energy of localized states, arising from the disorder of the Kapton structure, are additionally estimated from the I-V characteristics.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

scholarly journals Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Jinchai Li ◽  
Kai Huang ◽  
Guozhen Liu ◽  
Yinghui Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Carrier Transport ◽  
Defect Density ◽  
Numerical Study ◽  
Structure Design ◽  
Operating Conditions ◽  
Hole Injection ◽  
Electron Blocking Layer ◽  
Recombination Processes

AbstractHere we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density.Synopsis: The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

ACTIVATION ENERGY FOR HOLE INJECTION AND ANALYSIS OF THE SPACE CHARGE LAYER IN ANTHRACENE CRYSTALS

1974 ◽  
Vol 3 (12) ◽  
pp. 1459-1462
Author(s):  
Masahiro Kotani ◽  
Yoko Watanabe ◽  
Tomoko Kato
Keyword(s):  
Activation Energy ◽  
Space Charge ◽  
Space Charge Layer ◽  
Hole Injection ◽  
Charge Layer

Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device

1997 ◽  
Vol 467 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma
Keyword(s):  
Charge Trapping ◽  
Bistable Behavior ◽  
Novel Device ◽  
Voltage Curve ◽  
Current Voltage ◽  
Recombination Processes ◽  
Current Voltage Curve ◽  
Numerical Device ◽  
Silicon Device

ABSTRACTA novel device based on a-Si:H p+-i-n−-i-p−-i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two lightly doped n− and p− layers, where charge trapping determines the bistable behavior of the device. The ON condition is mantained until the ambipolar charge injection overcomes the fixed charge. The transition OFF-ON starts when, increasing the applied voltage, one of the two lightly doped layers becomes completely depleted. The transition ON-OFF is, instead, mainly dependent on the recombination processes occurring in the central doped layers. Devices with hysteresis around 2 V and tum-on voltage around 12 are presented.

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